Laser sustained argon plasmas in non-LTE for beamed energy propulsion

1991 ◽  
Author(s):  
DAVID ZERKLE ◽  
AYHAN MERTOGUL ◽  
HERMAN KRIER ◽  
JYOTI MAZUMDER
Keyword(s):  
1988 ◽  
Vol 21 (7) ◽  
pp. 1112-1116 ◽  
Author(s):  
A Sola ◽  
A Gamero ◽  
J Cotrino ◽  
V Colomer

2006 ◽  
Vol 58 (4) ◽  
pp. 175-184 ◽  
Author(s):  
Gregory Benford ◽  
Paul Nissenson
Keyword(s):  

2010 ◽  
Author(s):  
Donald G. Johansen ◽  
Claude Phipps ◽  
Kimiya Komurasaki ◽  
John Sinko

1995 ◽  
Vol 386 ◽  
Author(s):  
J. E. Parmeter ◽  
R. J. Shul ◽  
P. A. Miller

ABSTRACTWe have used in situ Auger spectroscopic analysis to investigate the composition of InP surfaces cleaned in rf H2 plasmas and etched in rf H2/CH4/Ar plasmas. In general agreement with previous results, hydrogen plasma treatment is found to remove surface carbon and oxygen impurities but also leads to substantial surface phosphorus depletion if not carefully controlled. Low plasma exposure times and rf power settings minimize both phosphorus depletion and surface roughening. Surfaces etched in H2/CH4/Ar plasmas can show severe phosphorus depletion in high density plasmas leading to etch rates of ∼ 700 Å/min, but this effect is greatly reduced in lower density plasmas that produce etch rates of 30–400 Å/min.


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