scholarly journals Chemical vapor deposition of sp2-boron nitride films on Al2O3 (0001), (11𝟐0), (1𝟏02) and (10𝟏0) substrates

2021 ◽  
Author(s):  
Sachin Sharma ◽  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystalline Films ◽  
Boron Nitride Films ◽  
Potential Use

Thin films of boron nitride in its sp2-hybridized form (sp2-BN) have potential use in UV-devices and dielectrics. Here, we explore chemical vapor deposition (CVD) of sp2-BN on various cuts of sapphire; Al2O3(112̅0), Al2O3(11̅02), Al2O3(11̅00) and Al2O3 (0001) using two CVD processes with different boron precursors; triethylborane (TEB) and trimethylborane (TMB). Fourier transform infrared spectroscopy (FTIR) showed that sp2-BN grows on all the sapphire substrates, using X-ray diffraction (XRD), 2θ/ω diffractograms showed that only Al2O3(112̅0) and Al2O3(0001) renders crystalline films and using phi(ɸ)-scans the growth of rhombohedral polytype (r-BN) films on these substrates is confirmed. These films are found to be epitaxially grown on an AlN interlayer with a higher crystalline quality for the films grown on the Al2O3(112̅0) substrate which is determined using omega(ω)-scans. Our study suggests that Al2O3(112̅0) is the most favorable sapphire substrate to realize the envisioned applications of r-BN films.

scholarly journals Chemical Vapor Deposition of Sp2-Boron Nitride on Si(111) Substrates from Triethylboron and Ammonia: Effect of Surface Treatments

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Film Growth ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Effect Of Surface

<p>Thin films of the sp<sup>2</sup>-hybridized polytypes of boron nitride are interesting materials for several electronic applications such as UV-devices. Deposition of epitaxial sp<sup>2</sup>-BN films has been demonstrated on several technologically important semiconductor substrates such as SiC and Al<sub>2</sub>O<sub>3</sub> and where controlled thin film growth on Si would be beneficial for integration of sp<sup>2</sup>-BN in many electronic device systems. We investigate growth of BN films on Si(111) by chemical vapor deposition from triethylboron B(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub> and ammonia NH<sub>3</sub> at 1300 °C with focus on treatments of the Si(111) surface by nitridation, carbidization and nitridation followed by carbidization prior to BN growth. Fourier transform infrared spectroscopy shows that the BN films deposited exhibit sp<sup>2</sup> bonding. X-ray diffraction reveals that the sp<sup>2</sup>-BN films predominantly grow amorphous on untreated and pre-treated Si(111), but with diffraction data showing that turbostratic BN can be deposited on Si(111) when the formation of Si<sub>3</sub>N<sub>4</sub> is avoided. We accomplish this condition by a nitridation procedure in a deposition chamber where B<sub>x</sub>C had previously been deposited at high temperature, but where the synthesis route needs to be further developed for a better process control. </p>

scholarly journals Chemical Vapor Deposition of Sp2-Boron Nitride on Si(111) Substrates from Triethylboron and Ammonia: Effect of Surface Treatments

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Film Growth ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Effect Of Surface

<p>Thin films of the sp<sup>2</sup>-hybridized polytypes of boron nitride are interesting materials for several electronic applications such as UV-devices. Deposition of epitaxial sp<sup>2</sup>-BN films has been demonstrated on several technologically important semiconductor substrates such as SiC and Al<sub>2</sub>O<sub>3</sub> and where controlled thin film growth on Si would be beneficial for integration of sp<sup>2</sup>-BN in many electronic device systems. We investigate growth of BN films on Si(111) by chemical vapor deposition from triethylboron B(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub> and ammonia NH<sub>3</sub> at 1300 °C with focus on treatments of the Si(111) surface by nitridation, carbidization and nitridation followed by carbidization prior to BN growth. Fourier transform infrared spectroscopy shows that the BN films deposited exhibit sp<sup>2</sup> bonding. X-ray diffraction reveals that the sp<sup>2</sup>-BN films predominantly grow amorphous on untreated and pre-treated Si(111), but with diffraction data showing that turbostratic BN can be deposited on Si(111) when the formation of Si<sub>3</sub>N<sub>4</sub> is avoided. We accomplish this condition by a nitridation procedure in a deposition chamber where B<sub>x</sub>C had previously been deposited at high temperature, but where the synthesis route needs to be further developed for a better process control. </p>

Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

1995 ◽  
Vol 406 ◽  
Author(s):  
M. S. Gaffneyt ◽  
C. M. Reavesl ◽  
A. L Holmes ◽  
R. S. Smith ◽  
S. P. DenBaars
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Normal Operation ◽  
Growth Monitoring ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

Chemical Vapor Deposition of Strontium-Barium-Niobate

1991 ◽  
Vol 243 ◽  
Author(s):  
A. Greenwald ◽  
M. Horenstein ◽  
M. Ruane ◽  
W. Clouser ◽  
J. Foresi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium Niobate ◽  
Electrical And Optical Properties ◽  
Strontium Barium ◽  
X Ray ◽  
Boston University

AbstractSpire Corporation has deposited strontium-barium-niobate by chemical vapor deposition at atmospheric pressure using Ba(TMHD), Sr(TMHD), and Nb ethoxide. Deposition temperature as 550°C in an isothermal furnace. Films were deposited upon silicon (precoated with silica), platinum, sapphire, and quartz. Materials were characterized by RBS, X-ray diffraction, EDS, electron, and optical microscopy. Electrical and optical properties were measured at Boston University.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Residual stresses in chemical vapor deposition free-standing diamond films by X-ray diffraction analyses

2000 ◽  
Vol 288 (2) ◽  
pp. 217-222 ◽  
Author(s):  
O Durand ◽  
R Bisaro ◽  
C.J Brierley ◽  
P Galtier ◽  
G.R Kennedy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray

Investigation of Thin Film Growth of B12As2 by Chemical Vapor Deposition

2003 ◽  
Vol 764 ◽  
Author(s):  
R. Nagarajan ◽  
J.H. Edgar ◽  
J. Pomeroy ◽  
M. Kuball ◽  
T. Aselage
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
X Ray Diffraction ◽  
Flow Rates ◽  
X Ray ◽  
Effects Of Temperature ◽  
Reactant Flow

AbstractThe chemical vapor deposition of icosahedral boron arsenide, B12As2, on 6H-SiC (0001) (on and off-axis) substrates was studied using hydrides as the reactants. The effects of temperature and reactant flow rates on the phases deposited and the crystal quality were determined. The growth rate increased with temperature from 1.5μm/h at 1100°C to 5 μm/h at 1400°C and decreased thereafter. X-ray diffraction revealed that the deposits were amorphous when the deposition temperature is below 1150° C. Above 1150°C, smooth B12As2 films were formed on 6H-SiC substrates with an orientation of (0001) B12As2 parallel to 6H-SiC (0001). Raman spectroscopy confirmed the strongly c-axis oriented nature of B12As2 film on 6H-SiC.

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