scholarly journals Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1404
Author(s):  
Mircea Dragoman ◽  
Adrian Dinescu ◽  
Florin Nastase ◽  
Daniela Dragoman
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Ferroelectric Material ◽  
Graphene Monolayer ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Graphene Fet ◽  
20 Nm ◽  
Nanopatterned Graphene

The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.

CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

2011 ◽  
Vol 1283 ◽  
Author(s):  
Benjamin Mailly Giacchetti ◽  
Allen Hsu ◽  
Han Wang ◽  
Ki Kang Kim ◽  
Jing Kong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Ph Sensing ◽  
Fabrication Technology ◽  
Initial Characterization ◽  
Effect Transistor ◽  
Grown Graphene ◽  
Graphene Fet

ABSTRACTThis paper presents the fabrication technology and initial characterization of electrolyte-gated field effect transistor (FET) arrays based on CVD grown graphene on copper. We show that the graphene FET (GFET), when immersed in electrolytes, exhibit a transconductance around 5 mS/mm. From preliminary pH sensing experiments, a pH sensitivity of 24 mV/pH has been demonstrated.

Probing the Performance of Glucose Oxidase Treated Graphene-Based Field Effect Transistors

2019 ◽  
Vol 19 (11) ◽  
pp. 7442-7446 ◽  
Author(s):  
Salma Siddique ◽  
Hamid Mukhtar
Keyword(s):  
Glucose Oxidase ◽  
Electrical Transport ◽  
Field Effect ◽  
Treatment Time ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Effect Transistor ◽  
Graphene Devices ◽  
Graphene Fet ◽  
Effect Of Glucose

Graphene due to its unique properties of biocompatibility has received considerable attention for biosensing applications. Here, we report the effect of glucose oxidase treatment on the graphene devices. Raman spectroscopy and the electrical transport measurements are performed to study the graphene intrinsic characteristics before glucose oxidase treatment. The absence of the defect peak in the Raman spectrum shows high-quality graphene. The modulation in the electrical properties is further investigated by different period of glucose oxidase treatment. Our results illustrate that the mobility of the graphene-based field effect transistor is gradually enhanced with the glucose oxidase treatment time. The enhancement in the electrical performance of graphene FET with the biomolecules could be the suitable route for the bioelectronic devices.

Graphene and CNT Field Effect Transistors Based Biosensor Models

2017 ◽  
pp. 294-333 ◽  
Author(s):  
Ali Hosseingholi Pourasl ◽  
Mohammad Taghi Ahmadi ◽  
Meisam Rahmani ◽  
Razali Ismail ◽  
Michael Loong Pengl Tan
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Velocity Model ◽  
E Coli ◽  
Graphene Field Effect Transistor ◽  
Current Voltage ◽  
Enzyme Sensors ◽  
Effect Transistor ◽  
Carrier Velocity ◽  
Electrical Biosensors

In this chapter, novel ideas of graphene and CNT based electrical biosensors are provided. A liquid gated graphene field effect transistor (LG-GFET) based biosensor model is analytically developed for electrical detection of Escherichia coli (E. coli) bacteria. E. coli absorption effects on the graphene surface in the form of conductance variation is considered. Moreover, the current-voltage characteristic in terms of conductance model is applied to evaluate the performance of the biosensor model. Furthermore, the CNT-FET platform is employed for modeling biosensor in order to detect Glucose. For diagnosing and monitoring the blood glucose level, glucose oxidase (GOx) based enzyme sensors have been immensely used. According to the proposed CNT-FET structure, charge based analytical modeling approach is used. The charge-based carrier velocity model is implemented to study electrical characteristics of CNT-FET. In the presented model, the gate voltage is considered as a function of glucose concentration. Finally, the both of presented models are compared with published experimental data.

scholarly journals Simulation of current-voltage characteristics of graphene field effect transistor (GFET)

2013 ◽  
Vol 16 (3) ◽  
pp. 5-12
Author(s):  
Hien Sy Dinh
Keyword(s):  
Field Effect ◽  
Function Method ◽  
Field Effect Transistor ◽  
Graphic User Interface ◽  
Graphene Field Effect Transistor ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Graphene Fet ◽  
Non Equilibrium Green’S Function

Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.

scholarly journals A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 771 ◽  
Author(s):  
Junjie Li ◽  
Yongliang Li ◽  
Na Zhou ◽  
Guilei Wang ◽  
Qingzhu Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Nanowire Array ◽  
Atomic Layer ◽  
Semiconductor Nanowires ◽  
Si Nanowire ◽  
Si Nanowire Array ◽  
20 Nm ◽  
Atomic Layer Etching ◽  
Application Prospects

Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.

scholarly journals Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography

2014 ◽  
Vol 2 (3) ◽  
pp. 131-139 ◽  
Author(s):  
Duyoung Choi ◽  
Cihan Kuru ◽  
Chulmin Choi ◽  
Kunbae Noh ◽  
Soon-Kook Hong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Nanopatterned Graphene

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Honeycomb Lattice ◽  
Theoretical Studies ◽  
Fabrication Technology ◽  
Dirac Cone ◽  
Free Standing ◽  
Silicene Nanoribbons ◽  
Effect Transistor

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

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