Electrically-Induced Light Emission in Polymer-Stabilized Proton Gradient Systems

Author(s):  
Jerzy J. Langer ◽  
Ewelina Frąckowiak

<div>Experiments with the chemically generated proton gradient, have lead to fabricate the system which emits the light, when electrically powered, owing to proton current flow. A polymeric scaffold preserves the stability of the system and, at the same time is playing a role of dopants of water, due to chemical character (acidic or basic) of side groups, which are responsible for gradient formation. The</div><div>results of experiments with the chemical model of the proton gradient, the protonic p-n junction, as a light emitting diode, make a “proof of concept”, which opens the way into new light generating process and new device (protonic LED), but also, to general understanding the proton gradient role in</div><div>the light emission processes.</div>

2019 ◽  
Author(s):  
Jerzy J. Langer ◽  
Ewelina Frąckowiak

<div>Experiments with the chemically generated proton gradient, have lead to fabricate the system which emits the light, when electrically powered, owing to proton current flow. A polymeric scaffold preserves the stability of the system and, at the same time is playing a role of dopants of water, due to chemical character (acidic or basic) of side groups, which are responsible for gradient formation. The</div><div>results of experiments with the chemical model of the proton gradient, the protonic p-n junction, as a light emitting diode, make a “proof of concept”, which opens the way into new light generating process and new device (protonic LED), but also, to general understanding the proton gradient role in</div><div>the light emission processes.</div>


2020 ◽  
Vol 15 (5) ◽  
pp. 599-606
Author(s):  
Jian Xu ◽  
Hongxiang Zhang ◽  
Chunxia Wu ◽  
Jun Dai

In this article, we reported the synthesis method of stable CsPbX3@SiO2 quantum dots using cesium acetate instead of cesium carbonate. The results showed that CsPbX3@SiO2 presents good crystallinity and excellent luminescence properties. The coating layer of SiO2 on the CsPbX3 quantum dots surface blocks the air and water contact and suppresses anion exchange between the quantum dots, which dramatically enhances the stability. White light-emitting diode devices are manufactured by integrating the green CsPbBr3@SiO2 quantum dots and red CsPbBr1 I2@SiO2 quantum dots on the blue GaN chips. The devices show stable white light emission with Commission Internationale de L'Eclairage color coordinates (0.3511, 0.3437), and the white light intensity keeps unchanged after continuously working for 16 hours. The results indicate that CsPbX3@SiO2 quantum dots can be an ideal down-conversion fluorescent material for white light-emitting diode devices.


2013 ◽  
Vol 103 (7) ◽  
pp. 073305 ◽  
Author(s):  
Xiao-Chen Jiang ◽  
Yan-Qing Li ◽  
Yan-Hong Deng ◽  
Qi-Qi Zhuo ◽  
Shuit-Tong Lee ◽  
...  

2013 ◽  
Vol 211 (3) ◽  
pp. 651-655 ◽  
Author(s):  
Jorge Oliva ◽  
Elder De la Rosa ◽  
Luis Diaz-Torres ◽  
Anvar Zakhidov

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.


2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.


2015 ◽  
Vol 15 (10) ◽  
pp. 7733-7737 ◽  
Author(s):  
Kwanjae Lee ◽  
Cheul-Ro Lee ◽  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Kee Young Lim ◽  
...  

We report the influences of a Si-doped graded superlattice (SiGSL) on the electrostatic discharge (ESD) characteristics of an InGaN/GaN light-emitting diode (LED). For comparison, a conventional InGaN/GaN LED (C-LED) was also investigated. The luminous efficacy for the SiGSL-LED was 2.68 times stronger than that for the C-LED at the injection current of 20 mA. The resistances estimated from current–voltage (I–V) characteristic curves were 16.5 and 8.8 Ω for the C-LED and SiGSL-LED, respectively. After the ESD treatment at the voltages of 4000 and 6000 V, there was no significant change in the I–V curves for the SiGSL-LED. Also, there was small variation in the I–V characteristics for the SiGSL-LED at the ESD voltage of 8000 V. However, the I–V curves for the C-LED were drastically degraded with increasing ESD voltage. While the light emission was not observed at the injection current of 20 mA from the C-LED sample after the ESD treatment, the emission spectra for the SiGSL-LED sample were clearly measured with the output powers of 10.47, 9.66, and 7.27 mW for the ESD voltages of 4000, 6000, and 8000 V respectively.


2008 ◽  
Vol 104 (10) ◽  
pp. 104506 ◽  
Author(s):  
Sebastian Bange ◽  
Andriy Kuksov ◽  
Dieter Neher ◽  
Antje Vollmer ◽  
Norbert Koch ◽  
...  

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