Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation

2004 ◽  
Vol 44 (9-11) ◽  
pp. 1721-1726 ◽  
2004 ◽  
Vol 72 (1-4) ◽  
pp. 352-356 ◽  
Author(s):  
M Cassé ◽  
J Prétet ◽  
S Cristoloveanu ◽  
T Poiroux ◽  
C Raynaud ◽  
...  

2008 ◽  
Vol 3 (2) ◽  
pp. 91-95
Author(s):  
Paula G. D. Agopian ◽  
João Antonio Martino ◽  
Eddy Simoen ◽  
Cor Claeys

In this work, we explore the gate oxide thickness influence on the Gate Induced Floating Body effect (GIFBE). This study was performed through two-dimensional numerical simulations and electrical measurements. The available devices are from 130nm and 65nm Silicon-On-Insulator (SOI) MOSFET technologies. The GIFBE and threshold voltage are evaluated as function of the gate oxide thickness reduction and an overlap tendency of the first and the second transconductance peaks is observed.


2019 ◽  
Vol 9 (1) ◽  
pp. 305-311
Author(s):  
Paula G. Der Agopian ◽  
Joao A. Martino ◽  
E. Simoen ◽  
C. Claeys

Author(s):  
Jing Chen ◽  
Jiexin Luo ◽  
Qingqing Wu ◽  
Zhan Chai ◽  
Xiaolu Huang ◽  
...  

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1657-1663 ◽  
Author(s):  
J.M. Rafí ◽  
E. Simoen ◽  
K. Hayama ◽  
A. Mercha ◽  
F. Campabadal ◽  
...  

Author(s):  
Yasuhiro Domae ◽  
Noriyuki Miura ◽  
Tomohiro Okamura ◽  
Anil Kumar ◽  
Jiro Ida

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