ANALISA KERUSAKAN PART RETAINING RING PADA MESIN DECANTER PANX 650

Axiomatic Design was used to develop a complete platform for chemical mechanical polishing (CMP) of silicon wafers. A functional requirement of the machine emerging from the axiomatic design process is the control of the wafer-scale polishing uniformity. Mechanisms to maintain control of the uniformity were designed, and integrated into a wafer carrier, which holds the wafer during polishing and applies normal pressure to the polishing interface. The wafer carrier is capable of controlling the pressure in four annular zones on a 200 mm wafer, as well as the pressure of the surrounding retaining ring. Initial testing of the wafer carrier indicates a successful design, offering removal non-uniformity of 1.7% after polishing 5,700 Å of SiO2 from the surface of a silicon wafer.

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50Mn18Cr4WN retaining ring macroresidual stress relieving by pulsating oil pressure

Materials Letters ◽

10.1016/j.matlet.2003.10.001 ◽

2004 ◽

Vol 58 (7-8) ◽

pp. 1340-1343 ◽

Cited By ~ 2

Author(s):

M.C. Sun ◽

Y.H. Sun ◽

R.K. Wang

Keyword(s):

Stress Relieving ◽

Retaining Ring

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Novel retaining ring to reduce CMP edge exclusion

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) ◽

10.1109/issm.2001.962981 ◽

2002 ◽

Cited By ~ 3

Author(s):

M.M. Touzov ◽

T. Fujita ◽

T.K. Doy

Keyword(s):

Retaining Ring ◽

Edge Exclusion

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Improvement of Wafer Edge Profile and Cmp Performance Through The Floating Head Design

MRS Proceedings ◽

10.1557/proc-613-e5.1.1 ◽

2000 ◽

Vol 613 ◽

Author(s):

Huey-Ming Wang ◽

Gerry Moloney ◽

Mario Stella ◽

Sesinando Deguzman

Keyword(s):

Chemical Mechanical Planarization ◽

Pressure Chamber ◽

Point Of View ◽

Thickness Variation ◽

Deformation Control ◽

Edge Profile ◽

Retaining Ring ◽

Floating Type ◽

Edge Exclusion ◽

Wafer Edge

ABSTRACTThe dependence of IC fabrication on the Chemical Mechanical Planarization (CMP) process increases as the device features go down to 0.25 micron or beyond. Due to the tighter CMP process spec, it is very important to reduce the within wafer non-uniformity (WIWNU%) to achieve higher process yield. The symmetrical increment of linear velocity at wafer edge is not sufficient to change wafer edge profile by breaking the matched speed rule. A better solution is through the change of head design for a fixed platen from the polisher design point of view. This study demonstrates the improvement of the CMP process performance, especially at the wafer edge, from the modification of the floating type polish head. The best WIWNU% from a single air chamber head is about 5.12% at 6-mm edge exclusion (EE). In order to obtain better pad deformation control, the retaining-ring pressure chamber is separated from that of the sub-carrier. The average WIWNU% is about 4% for 3-mm and 5-mm EE from two-pressure-chamber head. Due to the limitation of retaining-ring pressure effect, a third pressure chamber is further added that can be extended the edge control up to 1 inch from the wafer edge. The WIWNU% is about 3.8% at 5-mm edge exclusion with low down forces. The slurry and insert types also show effect on the wafer edge profile. It has been also proven that this three-pressure-chamber head is able to reduce the post-CMP thickness variation from the ILD production wafer, especially at wafer edges. More detailed information and CMP mechanism will be discussed in this paper.

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Synergetic effects of wafer rigidity and retaining-ring parameters on contact stress uniformity in chemical mechanical planarization

The International Journal of Advanced Manufacturing Technology ◽

10.1007/s00170-011-3215-8 ◽

2011 ◽

Vol 56 (5-8) ◽

pp. 523-538 ◽

Cited By ~ 5

Author(s):

Ian Hu ◽

Tian-Shiang Yang ◽

Kuo-Shen Chen

Keyword(s):

Contact Stress ◽

Chemical Mechanical Planarization ◽

Synergetic Effects ◽

Retaining Ring ◽

Stress Uniformity

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Effects of Wafer Carrier Design on Contact Stress Uniformity in CMP

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.126-128.305 ◽

2010 ◽

Vol 126-128 ◽

pp. 305-310 ◽

Cited By ~ 1

Author(s):

Ian Hu ◽

Tian Shiang Yang ◽

Kuo Shen Chen

Keyword(s):

Contact Stress ◽

Removal Rate ◽

Ring Width ◽

Pressure Profile ◽

Back Pressure ◽

Design Parameters ◽

Wafer Surface ◽

Retaining Ring ◽

Floating Type ◽

Stress Uniformity

Here we use 2-D models of fluid film lubrication and contact mechanics to calculate the contact stress and fluid (i.e., slurry) pressure distributions on the wafer–pad interface in CMP. In particular, the effective rigidity of the wafer (determined by the wafer carrier structure), the retaining ring width and its back pressure are taken to be the design parameters. The purpose is to study the synergetic effects of such parameters on the contact stress non-uniformity (NU), which directly affects the spatial non-uniformity of the material removal rate on the wafer surface. Our numerical results indicate that, for a given wafer rigidity, one may choose a particular combination of the retaining ring parameters to minimize NU. Also, the corresponding minimum NU decreases with the effective wafer rigidity, suggesting that it is beneficial to use a soft (e.g., floating-type) wafer carrier. Moreover, for a soft wafer carrier, the presence of the retaining ring also reduces NU to some extent, but the use of a multi-zone wafer-back pressure profile would be more effective in this regard.

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