Effect of Heating on the Structure and Properties of a Solid-Phase Diffusion Bond Based on a Forced Fit in OT4-1 Alloy

2018 ◽  
Vol 48 (12) ◽  
pp. 773-782
Author(s):  
P. V. Bakhmatov ◽  
V. I. Murav’ev ◽  
A. V. Frolov ◽  
V. S. Pitsyk
Author(s):  
Won-Ju Cho ◽  
Hyun-Mo Koo ◽  
Woo-Hyun Lee ◽  
Sang-Mo Koo ◽  
Hong-Bay Chung
Keyword(s):  

1989 ◽  
Vol 7 (3) ◽  
pp. 407-413 ◽  
Author(s):  
Ken Yasuda ◽  
Akira Okayama ◽  
Mitsuru Kobayashi ◽  
Takao Funamoto ◽  
Hideyo Kodama ◽  
...  

2015 ◽  
Vol 2015 (1) ◽  
pp. 000862-000867
Author(s):  
Masaru Morita ◽  
Toshiya Akamatsu ◽  
Nobuhiro Imaizumi ◽  
Seiki Sakuyama

As demands accelerate for high density, high speed transmission and low power integrated circuits, 3D-ICs with through-silicon via (TSV) is pursued. In the structure of 3D-ICs, the first die is attached to the second die with micro bump, and the second die is attached to the circuit substrate with a C4 solder bump. The electrode structure of the second die is Cu/Ni UBM. The stress of the Ni-B layer is less than that of the Ni-P layer, and the Ni-B layer can suppress stress and die warpage. The purposes of our study are to clarify the difference in the barrier properties of the Ni-B UBM and Ni-P under bump metal (UBM) and the relevance of the barrier properties of Ni UBM and intermetallic compound (IMC) growth. It was found that an electroless Ni-B plating layer is superior to a Ni-P plating layer for UBM in liquid phase diffusion and in solid phase diffusion, and that a segregated B layer is formed under the IMC layer of a Ni-B land due to reflow soldering. It was estimated that this B layer plays the role of being a barrier layer for solder diffusion.


2020 ◽  
Vol 30 ◽  
pp. 101404 ◽  
Author(s):  
Dongxu Guo ◽  
Geng Yang ◽  
Xuning Feng ◽  
Xuebing Han ◽  
Languang Lu ◽  
...  

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