Doping of Phosphorus and Boron into Silicon by Solid-Phase Diffusion at Low Temperatures ( <650° C)

1995 ◽  
Vol 34 (Part 2, No. 1A) ◽  
pp. L82-L84 ◽  
Author(s):  
Yutaka Ishikawa ◽  
Katsutoshi Sugioka
2006 ◽  
Vol 20 (25n27) ◽  
pp. 3999-4004
Author(s):  
HIROSHI MATSUI ◽  
KAZUFUMI WATANABE

Antimony-platinum bilayers were prepared on titanium substrates by the two-step electrodeposition in the usual baths, and then surface alloys were formed by the atom diffusion in the solid phase. The simple antimony layer was little influenced by the substrate in both the measurements of X-ray diffraction and the i - E characteristic in a sulfuric acid solution. Regarding the bilayers, the catalytic activity in hydrogen evolution reaction was very sensitive to the presence of platinum, while the hydrogen adsorbability was quite insensitive. An interaction between antimony and platinum was confirmed by the appearance of a new dissolution wave in the electrochemical measurement and the occurrence of a new diffraction in the X-ray diffraction pattern after the heat-treatment of about 400°C. Although the new diffraction disagreed with any of the reported alloys, clear diffraction pattern of PtSb 2 alloy was observed, when the bilayers were heat-treated at about 600°C for one hour. Considering the penetration depth of X-ray, the alloying of antimony and platinum seems to occur also at low temperatures at least at the top surface.


Author(s):  
Won-Ju Cho ◽  
Hyun-Mo Koo ◽  
Woo-Hyun Lee ◽  
Sang-Mo Koo ◽  
Hong-Bay Chung
Keyword(s):  

1989 ◽  
Vol 7 (3) ◽  
pp. 407-413 ◽  
Author(s):  
Ken Yasuda ◽  
Akira Okayama ◽  
Mitsuru Kobayashi ◽  
Takao Funamoto ◽  
Hideyo Kodama ◽  
...  

2015 ◽  
Vol 2015 (1) ◽  
pp. 000862-000867
Author(s):  
Masaru Morita ◽  
Toshiya Akamatsu ◽  
Nobuhiro Imaizumi ◽  
Seiki Sakuyama

As demands accelerate for high density, high speed transmission and low power integrated circuits, 3D-ICs with through-silicon via (TSV) is pursued. In the structure of 3D-ICs, the first die is attached to the second die with micro bump, and the second die is attached to the circuit substrate with a C4 solder bump. The electrode structure of the second die is Cu/Ni UBM. The stress of the Ni-B layer is less than that of the Ni-P layer, and the Ni-B layer can suppress stress and die warpage. The purposes of our study are to clarify the difference in the barrier properties of the Ni-B UBM and Ni-P under bump metal (UBM) and the relevance of the barrier properties of Ni UBM and intermetallic compound (IMC) growth. It was found that an electroless Ni-B plating layer is superior to a Ni-P plating layer for UBM in liquid phase diffusion and in solid phase diffusion, and that a segregated B layer is formed under the IMC layer of a Ni-B land due to reflow soldering. It was estimated that this B layer plays the role of being a barrier layer for solder diffusion.


2020 ◽  
Vol 30 ◽  
pp. 101404 ◽  
Author(s):  
Dongxu Guo ◽  
Geng Yang ◽  
Xuning Feng ◽  
Xuebing Han ◽  
Languang Lu ◽  
...  

1971 ◽  
Vol 24 (3) ◽  
pp. 479 ◽  
Author(s):  
NF Cheetham ◽  
ADE Pullin

Vapour pressure measurements of systems of the type perfluorocarbon bromide or iodide-trimethylamine have been made. These measurements clearly show that, at sufficiently low temperatures, a solid 1 : 1 adduct is reversibly formed. For the systems 1,2- dibromotetrafluoroethane-trimethylamine and trifluoro-methyl bromide- tetramethylethylenediamine 1 : 2 and 2 : 1 halide-amine adducts respectively were also observed. These stoicheiometries show that the dominant interaction leading to adduct formation is between the nitrogen and bromine atoms. Systems giving 1 : 1 stoicheiometry were examined at higher temperatures at which liquid and vapour but no solid phase is present. Strong negative deviations from ideality consistent with 1 : 1 interactions were observed. Approximate values of the thermodynamic quantities pertaining to the interaction have been derived.


Sign in / Sign up

Export Citation Format

Share Document