scholarly journals Indication of quantum mechanical electron transport in human substantia nigra tissue from conductive atomic force microscopy analysis

2018 ◽  
Author(s):  
Christopher Rourk
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Transport ◽  
Substantia Nigra ◽  
Electric Energy ◽  
Dopamine Neurons ◽  
Quantum Mechanical ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Human Substantia Nigra

Neuromelanin and ferritin in dopamine neurons of the substantia nigra have a distribution and density that is similar to disordered arrays of quantum dots in photovoltaic devices, which have been experimentally shown to conduct electric energy using quantum mechanical electron transport mechanisms. Conductive atomic force microscopy tests were performed on human substantia nigra tissue at room temperature, to determine whether evidence of electron transport is present. The test results presented here provide evidence of quantum mechanical electron transport from ferritin and neuromelanin at levels that that are sufficient to cause or contribute to generation of action potentials.

Electron transport through supported biomembranes at the nanoscale by conductive atomic force microscopy

2007 ◽  
Vol 18 (46) ◽  
pp. 465503 ◽  
Author(s):  
I Casuso ◽  
L Fumagalli ◽  
J Samitier ◽  
E Padrós ◽  
L Reggiani ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Transport ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Non-Fullerene Small Molecule Electron-Transporting Materials for Efficient p-i-n Perovskite Solar Cells

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1082
Author(s):  
Da-Seul Choi ◽  
Sung-Nam Kwon ◽  
Seok-In Na
Keyword(s):  
Atomic Force Microscopy ◽  
Solar Cells ◽  
Electron Transport ◽  
Perovskite Solar Cells ◽  
Internal Resistance ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
The Many ◽  
Low Coverage

PC61BM is commonly used in perovskite solar cells (PSC) as the electron transport material (ETM). However, PC61BM film has various disadvantages, such as its low coverage or the many pinholes that appear due to its aggregation behavior. These faults may lead to undesirable direct contact between the metal cathode and perovskite film, which could result in charge recombination at the perovskite/metal interface. In order to overcome this problem, three alternative non-fullerene electron materials were applied to inverted PSCs; they were evaluated on suitability as electron transport layers. The roles and effects of these non-fullerene ETMs on device performance were studied using photoluminescence (PL) measurements, field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), internal resistance in PSC measurements, and conductive atomic force microscopy (C-AFM). It was found that one of the tested materials, IT-4f, showed excellent electron extraction ability and was associated with reduced recombination. The PSC with IT-4f as the ETM produced better cell-performance; it had an average PCE of 11.21%, which makes it better than the ITIC and COi8DFIC-based devices. Finally, IT-4f was compared with PC61BM; it was found that the two materials have quite comparable efficiency and stability levels.

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

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