Electronic and magnetic properties of defected MoS2 monolayer

BIBECHANA ◽  
2021 ◽  
Vol 18 (2) ◽  
pp. 68-79
Author(s):  
Hari Krishna Neupane ◽  
Narayan Prasad Adhikari
Keyword(s):  
Magnetic Properties ◽  
Magnetic Moment ◽  
Density Functional ◽  
2D Materials ◽  
Dft Method ◽  
Vacancy Defect ◽  
Energy Bands ◽  
Band Structures ◽  
Vacancy Defects ◽  
Electronic And Magnetic Properties

It is interesting to understand the effect of defects in 2D materials because vacancy defects in 2D materials have novel electronic and magnetic properties. In this work, we studied electronic and magnetic properties of 1S vacancy defect (1Sv-MoS2), 2S vacancy defects (2Sv-MoS2), 1Mo vacancy defect (Mov-MoS2), and (1Mo & 1S) vacancy defects ((Mo-S)v-MoS2) in 2D MoS2 material by first-principles calculations within spin-polarized density functional theory (DFT) method. To understand the electronic properties of materials, we have analyzed band structures and DOS calculations and found that 1Sv-MoS2 & 2Sv-MoS2 materials have semiconducting nature. This is because, 1Sv-MoS2 & 2Sv-MoS2 materials open a small energy band gap of values 0.68 eV & 0.54 eV respectively in band structures. But, in Mov-MoS2 & (Mo-S)v-MoS2 materials, energy bands around the Fermi level mix with the orbital’s of Mo and S atoms. As a result, bands are split and raised around and above the Fermi energy level. Therefore, Mov-MoS2 & (Mo-S)v-MoS2 materials have metallic nature. We found that MoS2, 1Sv-MoS2 & 2Sv-MoS2 materials have non-magnetic properties, and Mov-MoS2 & (Mo-S)v-MoS2 materials have magnetic properties because magnetic moment of MoS2, 1Sv-MoS2 & 2Sv-MoS2 materials have 0.00 µB/cell value and Mov-MoS2 & (Mo-S)v-MoS2 materials have 2.72 µB/cell & 0.99 µB/cell  respectively. Therefore, non-magnetic MoS2 changes to magnetic Mov-MoS2 & (Mo-S)v-MoS2 materials due to Mo and (1Mo & 1S) vacancy defects.  The magnetic moment obtained in Mov-MoS2 & (Mo-S)v-MoS2 materials due to the distribution of up and down spins in 4p, 4d & 5s orbitals of  Mo atoms and 3s & 3p orbitals of S atoms in structures. The significant values of the magnetic moment are given by distributed spins in 4d orbital of Mo atoms and 3p orbital of S atoms. BIBECHANA 18 (2) (2021) 68-79  

scholarly journals Structural, Electronic and Magnetic Properties of Defected Water Adsorbed Single-Layer MoS2

2021 ◽  
Vol 26 (1) ◽  
pp. 43-50
Author(s):  
Hari Krishna Neupane ◽  
Narayan Prasad Adhikari
Keyword(s):  
Magnetic Properties ◽  
Band Structure ◽  
Density Of States ◽  
Density Functional ◽  
Single Layer ◽  
Vacancy Defect ◽  
Partial Density ◽  
Energy Bands ◽  
Vacancy Defects ◽  
Electronic And Magnetic Properties

Water adsorbed in MoS2 (wad-MoS2), 1S atom vacancy defect in wad-MoS2 (1S-wad-MoS2), 2S atoms vacancy defects in wad-MoS2 (2S-wad-MoS2), and 1Mo atom vacancy defect in wad-MoS2 (Mo-wad-MoS2) materials were constructed, and their structural, electronic, and magnetic properties were studied by spin-polarized density functional theory (DFT) based first-principles calculations. The wad-MoS2, 1S-wad-MoS2, 2S-wad-MoS2, and Mo-wad-MoS2 materials were found stable. From band structure calculations, wad-MoS2, 1S-wad-MoS2 and 2S-wad-MoS2 materials open energy bandgap of values 1.19 eV, 0.65 eV and 0.38 eV respectively. Also, it was found that the conductivity strength of the material increases with an increase in the concentration of S atom vacancy defects in the structure. On the other hand, the Mo-wad-MoS2 material has metallic properties because energy bands of electrons crossed the Fermi energy level in the band structure. For the investigation of magnetic properties, the density of states (DoS) and partial density of states (PDoS) calculations were used and found that wad-MoS2, 1S-wad-MoS2, and 2S-wad-MoS2 are non-magnetic materials, while Mo-wad-MoS2 is a magnetic material. The total magnetic moment of Mo-wad-MoS2 has a value of 2.66 µB/cell, due to the arrangement of unpaired up-spin and down-spin of electrons in 3s & 3p orbitals of S atoms; and 4p, 4d & 5s orbitals of Mo atoms in the material.

Structural, electronic and magnetic properties of S sites vacancy defects graphene/MoS2 van der Waals heterostructures: First-principles study

2021 ◽  
pp. 2150009
Author(s):  
Hari Krishna Neupane ◽  
Narayan Prasad Adhikari
Keyword(s):  
Magnetic Properties ◽  
Magnetic Moment ◽  
First Principles ◽  
Density Functional ◽  
Dominant Role ◽  
Van Der Waals ◽  
Schottky Contact ◽  
Unequal Distribution ◽  
Vacancy Defects ◽  
Electronic And Magnetic Properties

In this work, we investigated the geometrical structures, electronic and magnetic properties of S sites vacancy defects in heterostructure graphene/molybdenum disulphide ((HS)G/MoS[Formula: see text] material by performing first-principles calculations based on spin polarized Density Functional Theory (DFT) method within van der Waals (vdW) corrections (DFT-D2) approach. All the structures are optimized and relaxed by BFGS method using computational tool Quantum ESPRESSO (QE) package. We found that both (HS)G/MoS2 and S sites vacancy defects in (HS)G/MoS2 (D1S–(HS)G/MoS2, U1S–(HS)G/MoS2, 2S–(HS)G/MoS2 and 3S–(HS)G/MoS[Formula: see text] are stable materials, and atoms in defects structures are more compact than in pristine (HS)G/MoS2 structure. From band structure calculations, we found that (HS)G/MoS2, (D1S–(HS)G/MoS2, U1S–(HS)G/MoS2, 2S–(HS)G/MoS2 and 3S–(HS)G/MoS[Formula: see text] materials have [Formula: see text]-type Schottky contact. The Dirac cone is formed in conduction band of the materials mentioned above. The barrier height of Dirac cones from Fermi energy level of (HS)G/MoS2, (D1S–(HS)G/MoS2, U1S–(HS)G/MoS2, 2S–(HS)G/MoS2 and 3S–(HS)G/MoS[Formula: see text] materials have values 0.56[Formula: see text]eV, 0.62[Formula: see text]eV, 0.62[Formula: see text]eV, 0.64[Formula: see text]eV and 0.65[Formula: see text]eV, respectively, which means they have metallic properties. To study the magnetic properties of materials, we have carried out DoS and PDoS calculations. We found that (HS)G/MoS2, D1S–(HS)G/MoS2 and U1S–(HS)G/MoS2 materials have non-magnetic properties, and 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials have magnetic properties. Therefore, the non-magnetic (HS)G/MoS2 changes to magnetic 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials due to 2S and 3S atoms vacancy defects, respectively, in (HS)G/MoS2 material. Magnetic moment obtained in 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials due to the unequal distribution of up and down spin states of electrons in 2s and 2p orbitals of C atoms; 4p, 4d and 5s orbitals of Mo atoms; and 3s and 3p orbitals of S atoms in structures. Magnetic moment of 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials is −0.11[Formula: see text][Formula: see text]/cell and [Formula: see text]/cell, respectively, and spins of 2p orbital of C atoms, 3p orbital of S atoms and 4d orbital of Mo atoms have dominant role to create magnetism in 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials.

Influence of vacancy defects and 3d transition metal adatoms on the electronic and magnetic properties of graphene

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 92857-92861 ◽  
Author(s):  
Qingxiao Zhou ◽  
Weiwei Ju ◽  
Xiangying Su ◽  
Yongliang Yong ◽  
Zhibing Fu ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Magnetic Properties ◽  
Transition Metal ◽  
Density Functional ◽  
Dft Method ◽  
Functional Theory ◽  
Vacancy Defects ◽  
Electronic And Magnetic Properties ◽  
The Density Functional Theory ◽  
Defected Graphene

Based on the density functional theory (DFT) method, we investigated the geometry stability, electronic and magnetic properties of vacancy-defected graphene with and without the adsorption of transition metal (TM) adatoms (V, Cr, and Mn).

scholarly journals The effect of pressure and alloying on half-metallicity of quaternary Heusler compounds CoMnYZ (Z = Al, Ga, and In)

2016 ◽  
Vol 34 (4) ◽  
pp. 905-915 ◽  
Author(s):  
M. Rahmoune ◽  
A. Chahed ◽  
A. Amar ◽  
H. Rozale ◽  
A. Lakdja ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Density Functional ◽  
Heusler Alloys ◽  
Band Gaps ◽  
Ferromagnetic Behavior ◽  
Full Potential ◽  
Energy Bands ◽  
Half Metallicity ◽  
Half Metallic ◽  
Electronic And Magnetic Properties

AbstractIn this work, first-principles calculations of the structural, electronic and magnetic properties of Heusler alloys CoMnYAl, CoMnYGa and CoMnYIn are presented. The full potential linearized augmented plane waves (FP-LAPW) method based on the density functional theory (DFT) has been applied. The structural results showed that CoMnYZ (Z = Al, Ga, In) compounds in the stable structure of type 1+FM were true half-metallic (HM) ferromagnets. The minority (half-metallic) band gaps were found to be 0.51 (0.158), 0.59 (0.294), and 0.54 (0.195) eV for Z = Al, Ga, and In, respectively. The characteristics of energy bands and origin of minority band gaps were also studied. In addition, the effect of volumetric and tetragonal strain on HM character was studied. We also investigated the structural, electronic and magnetic properties of the doped Heusler alloys CoMnYGa1−xAlx, CoMnYAl1−xInx and CoMnYGa1−xInx (x = 0, 0.25, 0.5, 0.75, 1). The composition dependence of the lattice parameters obeys Vegard’s law. All alloy compositions exhibit HM ferromagnetic behavior with a high Curie temperature (TC).

Tunable electronic structure and magnetic moment in C2N nanoribbons with different edge functionalization atoms

2017 ◽  
Vol 19 (23) ◽  
pp. 15021-15029 ◽  
Author(s):  
Yusheng Wang ◽  
Nahong Song ◽  
Min Jia ◽  
Dapeng Yang ◽  
Chikowore Panashe ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Magnetic Properties ◽  
Electronic Structure ◽  
Magnetic Moment ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculations ◽  
Functional Theory ◽  
Electronic And Magnetic Properties

First principles calculations based on density functional theory were carried out to study the electronic and magnetic properties of C2N nanoribbons (C2NNRs).

Electronic and Magnetic Properties of Half Metallic Heusler Alloy Co2mnsi: A First-Principles Study

2017 ◽  
pp. 31-36
Author(s):  
Prakash Sharma ◽  
Gopi Chandra Kaphle
Keyword(s):  
Magnetic Properties ◽  
Magnetic Moment ◽  
Heusler Alloy ◽  
Density Functional ◽  
Heusler Alloys ◽  
Tight Binding ◽  
Lattice Parameter ◽  
Half Metallic ◽  
Electronic And Magnetic Properties ◽  
Sphere Approximation

Heusler alloys have been of great interest because of their application in the field of modern technological word. Electronic and magnetic properties of Co, Mn, Si and the Heusler alloy Co2MnSi have been studied using Density functional theory based Tight Binding Linear Muffin Tin Orbital with Atomic Sphere Approximation (TB-LMTO-ASA) approach. From the calculation lattice parameter of optimized structure of Co, Mn, Si and Co2MnSi are found to be 2.52A0 , 3.49A0 , 5.50A0 , 5.53A0 respectively. Band structure calculations show that Co and Mn are metallic, Si as semi-conducting while the Heusler alloy Co2MnSi as half-metallic in nature with band gap 0.29eV. The charge density plot indicates major bonds in Co2MnSi are ionic in nature. Magnetic property has been studied using the density of states (DOS), indicating that Co and Co2MnSi are magnetic with magnetic moment 2.85μB and 4.91μB respectively. The contribution of orbitals in band, DOS and magnetic moment are due to d-orbitals of Co and Mn and little from s and p-orbital of Si in Co2MnSi.The Himalayan Physics Vol. 6 & 7, April 2017 (31-36)

Electronic and Magnetic Properties of Fe Atomic Chain and Fe Atomic Plane: An ab initio Study

2018 ◽  
Vol 17 (05) ◽  
pp. 1750024
Author(s):  
D. P. Rai ◽  
Sandeep ◽  
A. Shankar ◽  
P. K. Patra ◽  
R. K. Thapa
Keyword(s):  
Magnetic Properties ◽  
Magnetic Moment ◽  
Density Functional ◽  
Atomic Plane ◽  
Infinite Length ◽  
Full Potential ◽  
Electronic And Magnetic Properties ◽  
Magnetic Metal ◽  
Frame Work ◽  
The Comparative Study

The electronic and magnetic properties of Fe atomic wire and atomic plane have been theoretically investigated from full potential linearized augmented plane wave (FPLAPW) method within a frame work of density functional theory (DFT). This work is based on the comparative study of number of Fe nanochains with infinite length and infinitely spread Fe nanosheet. A most commonly adopted GGA approximation is used for electron exchange correlation. In our calculation, the property of Fe-chain is predicted to be magnetic metal with the presence of deep valley (in Spin-up DOS) and a peak (in Spin-down DOS) at Fermi level ([Formula: see text]) shows the antisymmetric DOS. The presence of antisymmetric DOS is a signature of exchange splitting between the degenerated d-states. The splitting between t[Formula: see text] states is very prominent in Fe-chain which enhances the magnetic moment. The magnetic moment decreases with the increase in number of Fe-chains.

scholarly journals First principle calculations on structural, electronic, and magnetic properties of CdMAs2 (M = Sc, Ti, V) chalcopyrites

2017 ◽  
Vol 95 (11) ◽  
pp. 1031-1036
Author(s):  
D. Vijayalakshmi ◽  
G. Kalpana
Keyword(s):  
Magnetic Properties ◽  
Spin Polarization ◽  
Magnetic Moment ◽  
Density Functional ◽  
Chalcopyrite Structure ◽  
Full Potential ◽  
Local Spin Density Approximation ◽  
Electronic Band ◽  
Effective Spin ◽  
Electronic And Magnetic Properties

Structural, electronic, and magnetic properties of ternary CdMAs2 (M = Sc, Ti, and V) compounds in the chalcopyrite structure have been studied using full-potential linearized augmented plane wave method based on density functional theory. We present a detailed study of electronic band structure, density of states, and magnetic moment of all three compounds within local spin density approximation and generalized gradient approximation. CdMAs2 compounds are derived from chalcopyrite structured CdGeAs2 with the substitution of transition metal (TM) atoms at Ge site. Negative values of formation energy signify that these materials are stable in chalcopyrite structure. Spin-polarized calculations show that the substitution of TM atoms at the group IV site influences the appearance of ferromagnetic state (FM) in CdScAs2 and CdVAs2 compounds. FM in CdScAs2 and CdVAs2 compounds is mainly due to the strong spin polarization of 3d states of M cations and 4p states of As anion. CdVAs2 also exhibits half metallic ferromagnetism with an integer magnetic moment of 1.00μB per formula unit. However, there is no effective spin-polarization of energy states at the Fermi level in CdTiAs2 compound and shows a non-magnetic behaviour.

scholarly journals Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Kaiyun Chen ◽  
Junkai Deng ◽  
Yuan Yan ◽  
Qian Shi ◽  
Tieyan Chang ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Density Functional ◽  
2D Materials ◽  
Compressive Strain ◽  
High Energy ◽  
Electromagnetic Properties ◽  
Logic Device ◽  
Spintronic Devices ◽  
Electronic And Magnetic Properties ◽  
Single Piece

AbstractLateral heterostructures of two-dimensional (2D) materials, integrating different phases or materials into a single piece of nanosheet, have attracted intensive research interests for electronic devices. Extending the 2D lateral heterostructures to spintronics demands more diverse electromagnetic properties of 2D materials. In this paper, using density functional theory calculations, we survey all IV, V, and VI group transition metal dichalcogenides (TMDs) and discover that CrS2 has the most diverse electronic and magnetic properties: antiferromagnetic (AFM) metallic 1T phase, non-magnetic (NM) semiconductor 2H phase, and ferromagnetic (FM) semiconductor 1T′ phase with a Curie temperature of ~1000 K. Interestingly, we find that a tensile or compressive strain can turn the 1T′ phase into a spin-up or spin-down half-metal. Such strain tunability can be attributed to the lattice deformation under tensile/compressive strain that selectively promotes the spin-up/spin-down VBM (valence band bottom) orbital interactions. The diverse electromagnetic properties and the strain tunability enable strain-controlled spintronic devices using a single piece of CrS2 nanosheet with improved energy efficiency. As a demo, a prototypical design of the spin-valve logic device is presented. It offers a promising solution to address the challenge of high energy consumption in miniaturized spintronic devices.

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