scholarly journals Compositional, Structural, and Optical Characterizations of In1-XGaxN Epilayers Grown by High Pressure Chemical Vapor Deposition

2012 ◽  
Vol 3 ◽  
pp. 6-9 ◽  
Author(s):  
Ananta R. Acharya ◽  
Brian D. Thoms
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Optical Transmission ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Chemical

The compositional, structural and optical characterizations of In1-xGaxN epilayers grown by high pressure chemical vapor deposition have been carried out using Auger electron spectroscopy, x-ray diffraction and optical transmission spectroscopy. Auger electron spectroscopy revealed 14% gallium and 86% indium composition of the total metal contents in the In1-xGaxN epilayers. X-ray diffraction pattern showed three prominent peaks centered at 31.4?, 32.86? and 34.5? which are assigned to In1-xGaxN (0002), In (101) and GaN (0002) Bragg reflexes respectively. These results indicate no macroscopic observable phase separation in the analyzed In1-xGaxN sample. The optical transmission spectroscopy and the Beer-Lambert’s law quatified the absorption band edge to be 1.6 eV for the analyzed In1-xGaxN epilayers.The Himalayan PhysicsVol. 3, No. 32012Page: 6-9

The Use of Tris(Trimethylsilyl)Arsine to Deposit GaAs by OMCVD

1990 ◽  
Vol 204 ◽  
Author(s):  
Alan D. Berry ◽  
Andrew P. Purdy ◽  
Richard L. Wells ◽  
James W. Pasterczyk ◽  
James D. Johansen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Low Pressures

ABSTRACTChemical vapor deposition experiments using (Me3Si)3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi-conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from (C6F5)3GaAs(SiMe3)3 at 500°C and low pressures.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Chemical Vapor Deposition of Vanadium Oxide Tiiin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
Ogie Stewart ◽  
Joan Rodriguez ◽  
Keith B. Williams ◽  
Gene P. Reck ◽  
Narayan Malani ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vanadium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Pressure Chemical ◽  
Vanadium Oxide Thin Films ◽  
Deposited Films

AbstractVanadium oxide thin films were grown on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) from the reaction of vanadium(IV) chloride with isopropanol and t-butanol. Films were deposited in the temperature range 250 to 450°C. The as-deposited films were a dark greenish color consistent with formation of a lower oxide of vanadium. Annealing a film deposited on Corning 7059 glass in air converted the material to a yellow film. X-ray diffraction of the yellow film revealed the presence of V2O5. Optical spectra of the films are presented. Glass substrates previously coated with conductive fluorine doped tin oxide were coated with V2O5 and evaluated for electrochromic activity.

Trimethylamine Gallane as a Precursor to Cubic Gallium Nitride and Gallium Arsenide. Metal Hydride Chemical Vapor Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
Wayne L. Gladfelter ◽  
Jen-Wei Hwang ◽  
Everett C. Phillips ◽  
John F. Evans ◽  
Scott A. Hanson ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Chemical ◽  
Elemental Arsenic

ABSTRACTCyclo-trigallazane, [H2GaNH2]3, is known to form bulk powders of the new cubic phase of gallium nitride upon pyrolysis. An explanation for this unusual example where the molecular structure of the precursor controls the crystal structure of the solid state product is presented. In a hot-wall atmospheric pressure chemical vapor deposition (CVD) reactor, arsine was found to react with TMAG to form films of polycrystalline GaAs which were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The growth rates for smooth films was 1-4 μm/h. In a low pressure CVD reactor, elemental arsenic vapor was also found to react with the TMAG to give GaAs thin films.

Texture Evolution in Si/SiC Layered Structures Deposited on Si(001) by Chemical Vapor Deposition

1998 ◽  
Vol 13 (9) ◽  
pp. 2632-2642 ◽  
Author(s):  
L-O. Björketun ◽  
L. Hultman ◽  
O. Kordina ◽  
J-E. Sundgren
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Texture Evolution ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Pressure Chemical

Texture evolution in Si/SiC multilayers deposited by atmospheric pressure chemical vapor deposition on carbonized Si(001) substrates was investigated using x-ray diffraction and transmission electron microscopy. SiC layers were epitaxial and (001)-oriented. Si layers deposited on the SiC exhibited a columnar structure with predominantly (110) orientation which could be related to the nucleation. Orientational relationships were Si[111] ║ SiC[110] and Si[112] ║ SiC[110]. Also, a low density of (112)-oriented columns was present. Extensive twinning on the vertical {111} planes within the Si columns led to domains of hexagonal stacking up to 10 nm in size with the presence of 2H-Si and 4H-Si. Subsequent SiC layer growth on the (110)-oriented Si layer resulted in a (110)-oriented SiC layer if the Si layer was carbonized prior to growth.

Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy

2004 ◽  
Vol 43 (10) ◽  
pp. 6974-6977 ◽  
Author(s):  
Suguru Noda ◽  
Takeshi Tsumura ◽  
Jota Fukuhara ◽  
Takashi Yoda ◽  
Hiroshi Komiyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Auger Electron Spectroscopy ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor

scholarly journals Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

2012 ◽  
Vol 14 (8) ◽  
Author(s):  
Sabri Alkis ◽  
Mustafa Alevli ◽  
Salamat Burzhuev ◽  
Hüseyin Avni Vural ◽  
Ali Kemal Okyay ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Laser Ablation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Solution ◽  
Pressure Chemical

Characterization of InN layers grown by high-pressure chemical vapor deposition

2006 ◽  
Vol 89 (11) ◽  
pp. 112119 ◽  
Author(s):  
M. Alevli ◽  
G. Durkaya ◽  
A. Weerasekara ◽  
A. G. U. Perera ◽  
N. Dietz ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

APL Materials ◽  
2018 ◽  
Vol 6 (4) ◽  
pp. 046105 ◽  
Author(s):  
Xiaoyu Ji ◽  
Hiu Yan Cheng ◽  
Alex J. Grede ◽  
Alex Molina ◽  
Disha Talreja ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Conformal Coating ◽  
Pressure Chemical ◽  
Silicon And Germanium

scholarly journals Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
X Ray ◽  
Pole Figures ◽  
Out Of Plane ◽  
Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

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