scholarly journals Growth and characterization of Cd1-xZnxTe (0 \leq x \leq 1) nanolayers grown by isothermal closed space atomic layer deposition on GaSb and GaAs

2018 ◽  
Vol 64 (3) ◽  
pp. 206
Author(s):  
R. S. Castillo Ojeda ◽  
Joel Díaz-Reyes ◽  
M. Galván-Arellano ◽  
K. N. Rivera-Hernández ◽  
M. S. Villa-Ramírez ◽  
...  
Keyword(s):  
High Resolution ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition ◽  
Wide Range ◽  
Cdte Growth

In this work are presented the results obtained from the deposition ofCd1-xZnxTe nanolayers using as precursor the vapours of the elementsZn, Te, and a mixture of Cd and Zn on GaAs and GaSb (001) substrates by Atomic Layer Deposition technique (ALD), which allows the deposition of layers of nanometric dimensions. At each exposure of the growth surface to the of cation or anion precursors vapours, this surface is saturated. Therefore, it is considered that the process is self-regulated. The ZnTe layers were grown in a wide range of temperatures; however, ZnTe nanolayers with a shiny mirror-like surface could be grown at temperatures between 370 and 410oC. Temperatures higher than 400oC were necessary for the CdTe growth. The layers of the Cd1-xZnxTe ternary alloy were deposited at temperature range of 400 and 425oC. The grown nanofilms were characterized by Raman spectroscopy and high-resolution X-ray diffraction. The Raman spectrumshows the peak corresponding to LO-ZnTe at 208 cm-1, which is weak and is slightly redshifted in comparison with the reported for the bulk ZnTe. For the case of the CdTe nanolayers, Raman spectrum presents the LO-CdTe peak, which is indicative of the successfully growth of the nanolayers, its weakness and its slight redshifted in comparison with the reported for the bulk CdTe can be related with the nanometric characteristic of this layer. The performed high resolution X-ray diffraction measurements allowed to study some importantcharacteristics, as the crystallinity of the grown layers. Additionally, the performed HR-XRD measurements suggest that the crystalline quality have dependence with the growth temperature.

Ex-situ X-ray diffraction analysis of electrode strain at TiO2 atomic layer deposition/α-MoO3 interface in a novel aqueous potassium ion battery

2016 ◽  
Vol 316 ◽  
pp. 160-169 ◽  
Author(s):  
Nicholas David Schuppert ◽  
Santanu Mukherjee ◽  
Alex M. Bates ◽  
Eun-Jin Son ◽  
Moon Jong Choi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffraction Analysis ◽  
Atomic Layer ◽  
Potassium Ion ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

scholarly journals X-ray reflectivity characterization of atomic layer deposition Al2O3/TiO2 nanolaminates with ultrathin bilayers

2014 ◽  
Vol 32 (1) ◽  
pp. 01A111 ◽  
Author(s):  
Sakari Sintonen ◽  
Saima Ali ◽  
Oili M. E. Ylivaara ◽  
Riikka L. Puurunen ◽  
Harri Lipsanen
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

Electrical and Structural Properties of Ruthenium Film Grown by Atomic Layer Deposition Using Liquid-Phase Ru(CO)3(C6H8) Precursor

2007 ◽  
Vol 990 ◽  
Author(s):  
Sung-Hoon Chung ◽  
Vladislav Vasilyev ◽  
Evgeni Gorokhov ◽  
Yong-Won Song ◽  
Hyuk-Kyoo Jang
Keyword(s):  
Liquid Phase ◽  
Atomic Layer Deposition ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Structural And Electrical Properties

ABSTRACTWe investigated effects of thermal annealing on Ru films deposited on the 8 inch Si substrates using a volatile liquid-phase Ru precursor, tricarbonyl-1,3-cyclohexadienyl ruthenium (Ru(CO)3(C6H8)) by an atomic layer deposition (ALD) technique. Structural and electrical properties of the films were characterized by scanning probe microscopy, X-ray diffractometry, sheet resistance. Grazing incidence X-ray diffraction (GIXRD) patterns show typical Ru hexagonal polycrystalline peaks as annealing temperature was increased. At the highest annealing temperature condition, Ta = 700 °C electrical resistivity become 6 times less than in as-deposited films.

In situ synchrotron x-ray characterization of ZnO atomic layer deposition

2010 ◽  
Vol 97 (19) ◽  
pp. 191904 ◽  
Author(s):  
D. D. Fong ◽  
J. A. Eastman ◽  
S. K. Kim ◽  
T. T. Fister ◽  
M. J. Highland ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

Atomic layer deposition of HfO2, Al2O3, and HfAlOx using O3 and metal(diethylamino) precursors

2007 ◽  
Vol 22 (12) ◽  
pp. 3455-3464 ◽  
Author(s):  
Rajesh Katamreddy ◽  
Ronald Inman ◽  
Gregory Jursich ◽  
Axel Soulet ◽  
Christos Takoudis
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Thermal Characteristics ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Metal Precursors ◽  
Layer Deposition ◽  
Xrd Techniques

Tetrakis-diethylamino hafnium (TDEAH), tris-diethylamino aluminum (TDEAA), and ozone were used for the atomic layer deposition (ALD) of HfO2, Al2O3, and HfAlOx films. The ALD rates were measured to be 1.1 Å/cycle for HfO2 and 1.3 Å/cycle for Al2O3. The ALD temperature windows were found to be between 200 and 325 °C for TDEAA, and between 200 and 275 °C for TDEAH. The overlap of these ALD windows between 200 and 275 °C is critical for ALD of the composite film, HfAlOx. In addition to the overlapping ALD temperature windows, the two metal precursors have similar thermal characteristics, as shown by TGA and differential scanning calorimetry. As-deposited films and films postannealed at 600 and 800 °C films were analyzed using Fourier transformed infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy, and x-ray diffraction (XRD) techniques. FTIR spectra revealed interfacial oxide growth during deposition of both HfO2 and Al2O3 whose thickness increased with annealing temperature. The FTIR data also indicated hydroxyl and nitrate groups in the films; these species were removed after annealing in Ar at a temperature of ⩾600 °C. Both FTIR and XRD results indicated the crystallization of pure HfO2 after annealing at temperatures as low as 600 °C. On the other hand, pure Al2O3 remained amorphous after annealing at temperatures up to 800 °C. XRD data of the composite HfAlOx film show that films deposited by alternating five cycles of HfO2 and one cycle of Al2O3 remained amorphous after annealing at 600 °C. Rutherford backscattering analysis of HfAlOx deposited with a varied number of alternating HfO2 and Al2O3 cycles demonstrated a strong correlation between the cyclic dosage of TDEAA and TDEAH and the film composition.

scholarly journals Red Y2O3:Eu-Based Electroluminescent Device Prepared by Atomic Layer Deposition for Transparent Display Applications

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1505
Author(s):  
José Rosa ◽  
Mikko J. Heikkilä ◽  
Mika Sirkiä ◽  
Saoussen Merdes
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Driving Frequency ◽  
X Ray Diffraction ◽  
Electroluminescent Devices ◽  
X Ray ◽  
Layer Deposition ◽  
Transparent Display ◽  
High Processing ◽  
Luminance Efficiency

Y2O3:Eu is a promising red-emitting phosphor owing to its high luminance efficiency, chemical stability, and non-toxicity. Although Y2O3:Eu thin films can be prepared by various deposition methods, most of them require high processing temperatures in order to obtain a crystalline structure. In this work, we report on the fabrication of red Y2O3:Eu thin film phosphors and multilayer structure Y2O3:Eu-based electroluminescent devices by atomic layer deposition at 300 °C. The structural and optical properties of the phosphor films were investigated using X-ray diffraction and photoluminescence measurements, respectively, whereas the performance of the fabricated device was evaluated using electroluminescence measurements. X-ray diffraction measurements show a polycrystalline structure of the films whereas photoluminescence shows emission above 570 nm. Red electroluminescent devices with a luminance up to 40 cd/m2 at a driving frequency of 1 kHz and an efficiency of 0.28 Lm/W were achieved.

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