Investigation of Low-Energy Focused Ion Beam Milling for Scanning Capacitance Microscopy Sample Preparation

2004 ◽  
Author(s):  
David K. Fillmore ◽  
Shixin Wang
Keyword(s):  
Sample Preparation ◽  
Amorphous Silicon ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon Layer ◽  
Low Energy ◽  
Distribution Analysis ◽  
Preparation Methods ◽  
Scanning Capacitance Microscopy

Abstract Scanning capacitance microscopy (SCM) has become a valuable tool for failure analysis in integrated circuit manufacture. The ability to perform two-dimensional dopant distribution analysis on small, specific structures has been hampered, however, by the imprecision of current polishing techniques. Utilization of focused ion beam (FIB) milling instrumentation to perform precise cross sectioning of specific structures is preferable to manual polishing, although SCM data has not been forthcoming, due in part at least to the thicker amorphous silicon layer. This work examines the thickness of the amorphous silicon layers generated by various sample preparation methods, including conventional polishing, FIB milling, and low-energy FIB milling. In addition, this work provides SCM comparisons of the low energy FIB milling preparation procedure and conventional polishing.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

Localization of Electrically Active Extended Defects in GaN Using a DualBeam FIB

2018 ◽  
Author(s):  
T. Nshanian ◽  
B. Tracy ◽  
H. Ho
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Piezoelectric Materials ◽  
Ion Beam ◽  
Low Energy ◽  
Threading Dislocations ◽  
Extended Defects ◽  
Electrical Fields ◽  
Low Energy Ions ◽  
Piezoelectric Charge

Abstract The Dual Focused Ion Beam (DFIB has been used to expose electrical fields associated with the charge of electrically active extended defects (ED) – (e.g. threading dislocations - TDs) in GaN structures. The localized electrical fields above electrically active defects in piezoelectric materials are shown to capture sputtered low energy ions, turning them back toward the surface and redepositing them on top of defects (TDs), forming Gallium-rich islands. This “Ga droplet” decorates EDs and significantly simplifies the process of locating EDs for TEM sample preparation and analyses. The size and shape of the Ga islands is correlated with the accumulated piezoelectric charge density at the EDs.

Focused Ion Beam (FIB) Milling Damage Formed During Tem Sample Preparation of Silicon

1998 ◽  
Vol 4 (S2) ◽  
pp. 656-657 ◽  
Author(s):  
David W. Susnitzky ◽  
Kevin D. Johnson
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Process Development ◽  
Ion Beam ◽  
Surface Damage ◽  
Development Effort ◽  
Ion Milling ◽  
Preparation Methods ◽  
Damage Layer

The ongoing reduction of scale of semiconductor device structures places increasing demands on the sample preparation methods used for transmission electron microscopy (TEM). Much of the semiconductor industry's failure analysis and new process development effort requires specific transistor, metal or dielectric structures to be analyzed using TEM techniques. Focused ion beam (FIB) milling has emerged as a valuable technique for site-specific TEM sample preparation. FIB milling, typically with 25-50kV Ga+ ions, enables thin TEM samples to be prepared with submicron precision. However, Ga+ ion milling significantly modifies the surfaces of TEM samples by implantation and amorphization. Previous work using 90° milling angles has shown that Ga+ ion milling of Si produces a surface damage layer that is 280Å thick. This damage is problematical since the current generation of semiconductor devices requires TEM samples in the 500-1000Å thickness range.

TEM sample preparation with focused ion beams

1991 ◽  
Vol 49 ◽  
pp. 1108-1109
Author(s):  
S. J. Kirch ◽  
Ron Anderson ◽  
Stanley J. Klepeis
Keyword(s):  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Preparation ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Special Surface ◽  
Preparation Techniques

The continuing reduction in the sizes of features of interest for integrated circuit failure analysis requires greater precision in transmission electron microscopy (TEM) sample preparation. With minimum feature sizes approaching 0.5 μm, the mere finding of such a feature at a polished edge, let alone preparing a TEM sample containing it becomes a formidable task. The required substantial thinning also increases the risk of loss of what may be a unique sample.We present in this paper a technique that allows localized thinning of cross-sectional TEM samples using a focused ion beam (FIB) machine. Standard preparation techniques are used to make a cross-sectional TEM sample that would otherwise be too thick to be very useful for TEM analysis. This sample is then placed in the FIB machine, which is used as a micromachining tool. No special surface preparation is necessary and the secondary electron signal generated by the ion beam provides an image that can be used to locate the feature of interest.

Low keV FIB Applications for Circuit Edit

2007 ◽  
Author(s):  
Chad Rue ◽  
Randall Shepherd ◽  
Roy Hallstein ◽  
Rick Livengood
Keyword(s):  
Sample Preparation ◽  
Recent Work ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Milling ◽  
Physical Mechanisms ◽  
Potential Benefits

Abstract Focused ion beam (FIB) tools are used to perform "circuit edit," (CE), in which existing integrated circuit devices are modified to create prototype devices that simulate potential mask changes. Although ion milling at low keV is common in TEM sample preparation, the technique has not become commonplace for CE applications. This is because most commercial FIB systems are optimized for either 30 or 50 keV. Recent work in the laboratories of FEI and Intel have attempted to apply low keV FIB processing to cutting small copper lines on advanced IC devices. The majority of this paper focuses on water-assisted, low keV copper etching. Secondary objectives of this work are to raise general awareness among FIB users of the potential benefits of low keV processing, to speculate on the physical mechanisms involved, and to discuss some of the technical difficulties associated with low keV FIB operation.

Evaluation of scanning capacitance microscopy sample preparation by focused ion beam

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1554-1557 ◽  
Author(s):  
N. Rodriguez ◽  
J. Adrian ◽  
C. Grosjean ◽  
G. Haller ◽  
C. Girardeaux ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Capacitance Microscopy

TEM Sample Preparation Methods for MEMS Floating Structure Analysis

2014 ◽  
Author(s):  
Huisheng Yu ◽  
Shuqing Duan ◽  
Ming Li
Keyword(s):  
Sample Preparation ◽  
Structure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Analysis Method ◽  
Floating Structure ◽  
Preparation Methods ◽  
Floating Structures ◽  
Glass Needle

Abstract The MEMS structure has its particular character like hollow areas inside, and “floating” structures. Traditional TEM sample preparation method usually leads to distortion and dissociation defects of the floating structure. This paper introduces two innovative practical methods of TEM sample preparation using focused ion beam (FIB) for MEMS floating structure analysis. Method 1 used glass needle to lift out the separated film onto glue coated blank wafer; method 2 used in situ pick up system to lift out L- or C-shaped cut film onto TEM half-grid. And then the sample can be applied to normal TEM membrane preparation procedure.

Preparation of 3D Atom Probe Samples of Multilayered Film Structures using a Focused Ion Beam

2000 ◽  
Vol 6 (S2) ◽  
pp. 522-523 ◽  
Author(s):  
R. L. Martens ◽  
D. J. Larson ◽  
T. F. Kelly ◽  
A. Cerezo ◽  
P.’H. Clifton ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Deposition Process ◽  
Atom Probe ◽  
Film Structure ◽  
Preparation Technique ◽  
Preparation Methods ◽  
Recent Developments ◽  
Previous Sample

Focused ion beam (FIB) instruments have become essential for the preparation of atom probe samples from heterogeneous materials. Previous sample preparation methods such as electropolishing are limited in their application due to either geometrical or electrochemical constraints. Recent developments in sample preparation using a FIB have enabled the production of AP samples from various materials and, more importantly, from non-traditional sample geometries that contain multilayered thin film structures (MLF).Most sample preparation using a FIB first involves a sample that has been reduced in size through some manual sample preparation technique like tripod polishing or cutting. Smaller, thinner samples require less milling time in the FIB. A silicon wafer etched with the “Bosch” process was used to produce a surface that contains millions of 20, 16, 12, 8, and 4 μm square by -180 μrn long “posts”, Fig. 1. A multilayer film structure is deposited on the flat surface of the silicon posts in a standard deposition process.

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