Alternating Plane-View and Cross-Section Scanning Capacitance Microscope Technique to Reveal Various Implant Issue

Author(s):  
Tsan-Chang Chuang ◽  
Cha-Ming Shen ◽  
Shi-Chen Lin ◽  
Chen-May Huang ◽  
Jin-Hong Chou ◽  
...  

Abstract Scanning capacitance microscopy (SCM) is a 2-D carrier and/or dopant concentration profiling technique under development that utilizes the excellent spatial resolution of scanning probe microscopy. However, PV-SCM has limited capability to achieve the goal due to inherent "plane" trait. On top of that, deeper concentration profile just like deep N-well is also one of restrictions to use. For representing above contents more clearly, this paper presents a few cases that demonstrate the alternated and optimized application of PV-SCM and X-SCM. The case studies concern Joint Test Action Group failure and stand-by failure. These cases illustrate that the correct selection from either plane-view or cross-sectional SCM analysis according to the surrounding of defect could help to exactly and rapidly diagnose the failure mechanism. Alternating and optimizing PV-SCM and X-SCM techniques to navigate various implant issue could provide corrective actions that suit local circumstance of defects and identify the root cause.

Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.


Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.


2015 ◽  
Vol 2015 (1) ◽  
pp. 000675-000684
Author(s):  
Rama Hegde ◽  
Anne Anderson ◽  
Sam Subramanian ◽  
Andrew Mawer ◽  
Ed Hall ◽  
...  

In-process failures were experienced during printed circuit board (PCB) SMT assembly of a 16 Quad Flat No Leads (QFN) device. The failures appeared to be solderability related with QFN unit I/O pads not soldering robustly and sometimes leading to QFN detachment following board mounting. When assembly did take place on affected QFN units, the resulting solder joint was observed to be weak. This paper reports on very systematic analyses of the QFN device I/O pads using optical inspections, AES surface, AES depth profiling, SEM/EDX, SIMS, FIB and TEM cross-sectional measurements to determine the root cause of the failure and the failure mechanism. The detached QFN units, suspect and good unsoldered units, passing and failing units obtained from customers were examined. The industry standard surface mount solderability testing was performed on good and suspect parts, and all were observed to pass as evidenced by >95% coverage of the I/O pads. Optical inspections and a wide variety of physical analysis of the pads on fresh parts showed no anomalies with only the expected Au over Pd over Ni found. AES analysis was performed including depth profiling to look for any issues in the NiPdAu over base Cu plating layers that could be contributing the solderability failures. The AES depth profiling indicated AuPd film on the Ni under layer for the I/O pads as expected. No unexpected elements or oxide layers were observed at any layer. Then, one failing and one passing units were compared by doing FIB cross-section, FIB planar section and TEM cross-section analysis. The cross-sectional analysis showed rough Ni surface for the failing units, while the Ni surface was relatively smooth for the passing unit. Further, finer Cu grains and Ni grains were observed on the passing units. Additionally, the lead frame fabrication process mapping showed rough Cu, Ni “texturing” and use of low electro chemical polishing (ECP) current on the bad units compared to that of the good units. All affected bad units were confirmed coming from a second source Cu supplier with the rough Cu. The weak and irregular NiSn IMC formation on the bad units caused IMC separation and possible spalling during board solder reflow primarily due to the rough base Cu and irregular grain sizes and resulting lower ECP lead frame plating current. A possible final factor was marginally low Pd thickness. In conclusion, the 16 QFN device solderability failure root cause summary and the lessons learned from a wide variety of analysis techniques will be discussed.


1998 ◽  
Author(s):  
M. Lipschutz ◽  
R. Brannam ◽  
T. Nguyentat

Abstract This article details the results of a failure analysis performed on a Qualification Unit injector for a military satellite thrusters and explains that the failure was initially detected due to a shift in performance during qualification testing. Failure analysis involved non-destructive evaluation on the injector using micro-focus X-ray and scanning electron microscopy. Serial cross-sectional metallography was then performed, with each cross-section documented by optical microscopy and SEM. The failure analysis resulted in three main conclusions: (1) the root cause of the failure was attributed to multiple detonations in or around the damaged orifice; these detonations were likely caused by fuel and/or combustion products condensing in the orifice between pulses and then igniting during a subsequent pulse; (2) multiple damage mechanisms were identified in addition to the ZOT detonations; and (3) the material and platelet manufacturing process met all design parameters.


2003 ◽  
Vol 34 (5-8) ◽  
pp. 571-573 ◽  
Author(s):  
M.I.N. da Silva ◽  
J.C. González ◽  
P.E. Russell

2016 ◽  
Vol 858 ◽  
pp. 497-500 ◽  
Author(s):  
H.R. Rossmann ◽  
Urs Gysin ◽  
Alexander Bubendorf ◽  
Thilo Glatzel ◽  
S.A. Reshanov ◽  
...  

The shielding cell architecture of a buried grid (BG) Junction Barrier Schottky (JBS) diode consisting of multiple consecutive p+-implanted stripes below the metal/semiconductor interface has been observed by performing non-contact Scanning Probe Microscopy (SPM) and Secondary Electron Potential Contrast (SEPC) measurements on the cross-section of the device. We have demonstrated that these techniques succeeded in mapping the two-dimensional carrier distribution inside the active area of the device, however with different resolution and quantification possibilities.


Author(s):  
M. K. Lamvik ◽  
A. V. Crewe

If a molecule or atom of material has molecular weight A, the number density of such units is given by n=Nρ/A, where N is Avogadro's number and ρ is the mass density of the material. The amount of scattering from each unit can be written by assigning an imaginary cross-sectional area σ to each unit. If the current I0 is incident on a thin slice of material of thickness z and the current I remains unscattered, then the scattering cross-section σ is defined by I=IOnσz. For a specimen that is not thin, the definition must be applied to each imaginary thin slice and the result I/I0 =exp(-nσz) is obtained by integrating over the whole thickness. It is useful to separate the variable mass-thickness w=ρz from the other factors to yield I/I0 =exp(-sw), where s=Nσ/A is the scattering cross-section per unit mass.


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