Inter Layer Dielectric Defect Induced High Contact Resistance
Keyword(s):
Abstract High contact resistance can be caused by moisture absorption in low phosphorus content BPTEOS. Moisture diffused through the TiN glue layer is absorbed by the BPTEOS during subsequent thermal processes resulting in increased contact resistance. This failure mode was studied by combining different failure analysis methods and was confirmed by duplication on experimental wafers.
2018 ◽
Vol 69
(21)
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pp. 4993-4996
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2018 ◽
Vol 2
(Special edition 2)
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pp. 123-132
Keyword(s):
2012 ◽
Vol 97
(5)
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pp. 698-706
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Keyword(s):