Split-Gate Flash Memory Cell Odd/Even Fail Pattern Failure Analysis

2011 ◽  
Author(s):  
Re-Long Chiu ◽  
Jason Higgins ◽  
Shu-Lan Ying ◽  
Jones Chung ◽  
Gang Wang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Flash Memory ◽  
Voltage Drop ◽  
Memory Cell ◽  
Failure Pattern ◽  
Cell Current ◽  
Photo Alignment ◽  
Flash Memory Cell ◽  
Embedded Flash

Abstract A NOR-type split gate embedded Flash memory product program marginal fail with odd/even word line failure pattern. Based on cell current comparison, programming cycling tests and voltage drop measurements, the invisible cause of even/odd cells weak program failure mechanism was verified and confirmed visibly by cross sectioning and junction stain treatment. This problem was then solved by tightening photo alignment control and exposure conditions.

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

Flash Memory Cell Compact Modeling Using PSP Model

2008 ◽  
Author(s):  
Anthony Maure ◽  
Pierre Canet ◽  
Frederic Lalande ◽  
Bertrand Delsuc ◽  
Jean Devin
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Compact Modeling ◽  
Flash Memory Cell

Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure

2008 ◽  
Vol E91-C (5) ◽  
pp. 736-741
Author(s):  
H.-A-R. JUNG ◽  
K.-R. HAN ◽  
Y.-M. KIM ◽  
J.-H. LEE
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Channel Structure ◽  
Device Design ◽  
Saddle Type ◽  
Flash Memory Cell
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