A Superconducting Nanowire Single-Photon Detector (SnSPD) System for Ultra Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuits

Abstract In this paper, we present a Superconducting Nanowire Single Photon Detector (SnSPD) system and its application to ultra low voltage Time-Resolved Emission (TRE) measurements (also known as Picosecond Imaging Circuit Analysis, PICA) of scaled VLSI circuits. The 9 µm-diameter detector is housed in a closed loop cryostat and fiber coupled to an existing Emiscope III tool for collecting spontaneous emission light from the backside of integrated circuits (ICs) down to a world record 0.5 V supply voltage in a few minutes.

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Ultra-Low Voltage Time-Resolved Emission Measurements from 32 nm SOI CMOS Integrated Circuits

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0406 ◽

2014 ◽

Author(s):

Andrea Bahgat Shehata ◽

Franco Stellari ◽

Alan Weger ◽

Peilin Song ◽

Vikas Anant ◽

...

Keyword(s):

Integrated Circuits ◽

Low Voltage ◽

Supply Voltage ◽

Single Photon ◽

Photon Detector ◽

Single Photon Detector ◽

Time Resolved ◽

Threshold Voltages ◽

Two Generations ◽

Superconducting Nanowire

Abstract This work presents a comparison of two generations of Superconducting nanowire Single-Photon Detector (SnSPD) prototypes used for Time-Resolved Emission (TRE) measurements from VLSI chips. The performance of the systems is compared in order to understand the figures of merit that a single-photon detector should have to enable the acquisition of time resolved emission waveforms for ultra-low voltage applications. We will show that measurements down to a new World record low 0.4 V supply voltage were made possible by a careful optimization of the detector front-end electronics. We also characterized the emission from devices with different threshold voltages in order to understand how the emission contributions depend on this parameter and how this affects the resulting waveform SNR.

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Time-Resolved Optical Measurements from 0.13μm CMOS Technology Microprocessor Using a Superconducting Single-Photon Detector

ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2003p0040 ◽

2003 ◽

Author(s):

Franco Stellari ◽

Peilin Song ◽

Alan J. Weger ◽

Moyra K. McManus

Keyword(s):

Low Voltage ◽

Supply Voltage ◽

Single Photon ◽

Cmos Technology ◽

Optical Measurements ◽

Acquisition Time ◽

Photon Detector ◽

Single Photon Detector ◽

Time Resolved ◽

The One

Abstract In this paper we examine the use of the Superconducting Single-Photon Detector (SSPD) [1] for extracting electrical waveforms on an IBM microprocessor fabricated in a 0.13µm technology with 1.2V nominal supply voltage. Although the detector used in our experiments is prototype version of the one discussed in [1] demonstrating lower performance, we will show that it provides a significant reduction in acquisition time for the collection of optical waveforms, thus maintaining the usability of the PICA technique for present and future low voltage technologies.

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High-time-resolved 64-channel single-flux quantum-based address encoder integrated with a multi-pixel superconducting nanowire single-photon detector

Optics Express ◽

10.1364/oe.26.029045 ◽

2018 ◽

Vol 26 (22) ◽

pp. 29045 ◽

Cited By ~ 19

Author(s):

Shigeyuki Miyajima ◽

Masahiro Yabuno ◽

Shigehito Miki ◽

Taro Yamashita ◽

Hirotaka Terai

Keyword(s):

Single Photon ◽

High Time ◽

Flux Quantum ◽

Photon Detector ◽

Single Photon Detector ◽

Time Resolved ◽

Superconducting Nanowire

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Tuning of superconducting nanowire single-photon detector parameters for VLSI circuit testing using time-resolved emission

10.1117/12.2079985 ◽

2015 ◽

Cited By ~ 1

Author(s):

A. Bahgat Shehata ◽

F. Stellari

Keyword(s):

Single Photon ◽

Vlsi Circuit ◽

Circuit Testing ◽

Photon Detector ◽

Single Photon Detector ◽

Time Resolved ◽

Superconducting Nanowire

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A Position-Sensitive, Single-Photon Detector with Enhanced NIR Response

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0005 ◽

2011 ◽

Author(s):

Franco Stellari ◽

Peilin Song ◽

Alan J. Weger ◽

Tomonori Nakamura ◽

Stanley Kim ◽

...

Keyword(s):

Near Infrared ◽

Low Voltage ◽

Supply Voltage ◽

Single Photon ◽

Single Photon Detector ◽

Power Supply Voltage ◽

Time Resolved ◽

Two Generations ◽

Advanced Analysis ◽

Position Sensitive

Abstract In this paper, we evaluate a novel, position-sensitive, singlephoton detector with enhanced Near InfraRed (NIR) sensitivity [1-3] for taking 2D Time Resolved Emission (TRE), also known as Picosecond Imaging for Circuit Analysis (PICA), in future low voltage SOI technologies. In particular, we will investigate and quantify the sensitivity of two generations (Gen. I and Gen. II) of PICA cameras by Hamamatsu Photonics as a function of the power supply voltage on an IBM 45 nm SOI test chip. Additionally, we will compare the results to the performance obtained with an InGaAs Single Photon Avalanche Diode (SPAD) from DCG Systems [4]. Finally we will show a case study and an advanced analysis and localization technique that takes advantage of the 2D capability of the camera.

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