Time-Resolved Optical Measurements from 0.13μm CMOS Technology Microprocessor Using a Superconducting Single-Photon Detector

2003 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
Alan J. Weger ◽  
Moyra K. McManus
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Single Photon ◽  
Cmos Technology ◽  
Optical Measurements ◽  
Acquisition Time ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Time Resolved ◽  
The One

Abstract In this paper we examine the use of the Superconducting Single-Photon Detector (SSPD) [1] for extracting electrical waveforms on an IBM microprocessor fabricated in a 0.13µm technology with 1.2V nominal supply voltage. Although the detector used in our experiments is prototype version of the one discussed in [1] demonstrating lower performance, we will show that it provides a significant reduction in acquisition time for the collection of optical waveforms, thus maintaining the usability of the PICA technique for present and future low voltage technologies.

A Superconducting Nanowire Single-Photon Detector (SnSPD) System for Ultra Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuits

2013 ◽  
Author(s):  
Franco Stellari ◽  
Alan J. Weger ◽  
Seongwon Kim ◽  
Dzmitry Maliuk ◽  
Peilin Song ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Single Photon ◽  
Vlsi Circuits ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Time Resolved ◽  
Superconducting Nanowire ◽  
Emission Light

Abstract In this paper, we present a Superconducting Nanowire Single Photon Detector (SnSPD) system and its application to ultra low voltage Time-Resolved Emission (TRE) measurements (also known as Picosecond Imaging Circuit Analysis, PICA) of scaled VLSI circuits. The 9 µm-diameter detector is housed in a closed loop cryostat and fiber coupled to an existing Emiscope III tool for collecting spontaneous emission light from the backside of integrated circuits (ICs) down to a world record 0.5 V supply voltage in a few minutes.

Advanced Optical Testing of an Array in 65 nm CMOS Technology

2005 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
Todd A. Christensen
Keyword(s):  
Low Voltage ◽  
Single Photon ◽  
Cmos Technology ◽  
Optical Measurements ◽  
Readout Circuit ◽  
Optical Testing ◽  
Optical Analysis ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Collision Problem

Abstract In this paper we present the advanced optical testing of an array fabricated in IBM’s 65 nm SOI CMOS technology, using the Picosecond Imaging Circuit Analysis (PICA) [1-11] tool equipped with the Superconducting Single-Photon Detector (SSPD) [12,13]. Based on the results of the optical analysis we were able to confirm a time collision problem in the readout circuit of the array. In the following sections we will also discuss the use of an innovative optical packaging for testing chips requiring wire-bonding, along with record low voltage optical measurements, down to 0.7 V.

Ultra-Low Voltage Time-Resolved Emission Measurements from 32 nm SOI CMOS Integrated Circuits

2014 ◽  
Author(s):  
Andrea Bahgat Shehata ◽  
Franco Stellari ◽  
Alan Weger ◽  
Peilin Song ◽  
Vikas Anant ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Single Photon ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Time Resolved ◽  
Threshold Voltages ◽  
Two Generations ◽  
Superconducting Nanowire

Abstract This work presents a comparison of two generations of Superconducting nanowire Single-Photon Detector (SnSPD) prototypes used for Time-Resolved Emission (TRE) measurements from VLSI chips. The performance of the systems is compared in order to understand the figures of merit that a single-photon detector should have to enable the acquisition of time resolved emission waveforms for ultra-low voltage applications. We will show that measurements down to a new World record low 0.4 V supply voltage were made possible by a careful optimization of the detector front-end electronics. We also characterized the emission from devices with different threshold voltages in order to understand how the emission contributions depend on this parameter and how this affects the resulting waveform SNR.

A Position-Sensitive, Single-Photon Detector with Enhanced NIR Response

2011 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
Alan J. Weger ◽  
Tomonori Nakamura ◽  
Stanley Kim ◽  
...  
Keyword(s):  
Near Infrared ◽  
Low Voltage ◽  
Supply Voltage ◽  
Single Photon ◽  
Single Photon Detector ◽  
Power Supply Voltage ◽  
Time Resolved ◽  
Two Generations ◽  
Advanced Analysis ◽  
Position Sensitive

Abstract In this paper, we evaluate a novel, position-sensitive, singlephoton detector with enhanced Near InfraRed (NIR) sensitivity [1-3] for taking 2D Time Resolved Emission (TRE), also known as Picosecond Imaging for Circuit Analysis (PICA), in future low voltage SOI technologies. In particular, we will investigate and quantify the sensitivity of two generations (Gen. I and Gen. II) of PICA cameras by Hamamatsu Photonics as a function of the power supply voltage on an IBM 45 nm SOI test chip. Additionally, we will compare the results to the performance obtained with an InGaAs Single Photon Avalanche Diode (SPAD) from DCG Systems [4]. Finally we will show a case study and an advanced analysis and localization technique that takes advantage of the 2D capability of the camera.

Time-Resolved Imaging of VLSI Circuits Using a Single-Point Single-Photon Detector and a Scanning Head

2019 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
Yoshitaka Iwaki ◽  
Stanley Kim ◽  
Manuel Villalobos
Keyword(s):  
Laser Scanning ◽  
Single Photon ◽  
Single Point ◽  
Low Noise ◽  
Acquisition Time ◽  
Prototype System ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Time Resolved ◽  
Scanning Head

Abstract In this paper, we present the first prototype of a Scanning Time-Resolved Emission (STRE) system consisting of a high-sensitivity, low-noise, and low-jitter single-point Superconducting Single-Photon Detector (SSPD) combined with a specialized scanning head of a Laser Scanning Microscope (LSM). This idea was first proposed in late 2006 [1] but required the right combination of detector, customization, and collaboration with a tool vendor to get to fruition. It should be understood that this is still a prototype system under development and significant improvements in acquisition time, resolutions, and performance are expected in the near future. In this paper, we will also present the first preliminary results acquired using a test chip fabricated in 32 nm SOI.

scholarly journals High-time-resolved 64-channel single-flux quantum-based address encoder integrated with a multi-pixel superconducting nanowire single-photon detector

2018 ◽  
Vol 26 (22) ◽  
pp. 29045 ◽  
Author(s):  
Shigeyuki Miyajima ◽  
Masahiro Yabuno ◽  
Shigehito Miki ◽  
Taro Yamashita ◽  
Hirotaka Terai
Keyword(s):  
Single Photon ◽  
High Time ◽  
Flux Quantum ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Time Resolved ◽  
Superconducting Nanowire

A low-noise time-gated single-photon detector in a HV-CMOS technology for triggered imaging

2013 ◽  
Vol 201 ◽  
pp. 342-351 ◽  
Author(s):  
E. Vilella ◽  
O. Alonso ◽  
A. Montiel ◽  
A. Vilà ◽  
A. Diéguez
Keyword(s):  
Single Photon ◽  
Cmos Technology ◽  
Low Noise ◽  
Photon Detector ◽  
Single Photon Detector

Time-Resolved STED Microscopy with Single-Photon Detector Array: a Perfect Synergy

2021 ◽  
Author(s):  
Giorgio Tortarolo ◽  
Simonluca Piazza ◽  
Andrea Bucci ◽  
Paolo Bianchini ◽  
Colin J.R. Sheppard ◽  
...  
Keyword(s):  
Single Photon ◽  
Detector Array ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Time Resolved ◽  
Sted Microscopy
Sign in / Sign up

Export Citation Format

Share Document