A Latent Issue of Via Resistance: Mechanism and Solution

2018 ◽  
Author(s):  
Wentao Qin ◽  
Scott Donaldson ◽  
Dan Rogers ◽  
Lahcen Boukhanfra ◽  
Julien Thiefain ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Chemical Mechanical Planarization ◽  
Resistance Mechanism ◽  
Formation Enthalpy ◽  
Metal Line ◽  
Device Failure ◽  
Valence Electrons ◽  
Wafer Processing ◽  
Field Failure ◽  
And Tungsten

Abstract Many semiconductor products are manufactured with mature technologies involving the uses of aluminum (Al) lines and tungsten (W) vias. High resistances of the vias were sometimes observed only after electrical or thermal stress. A layer of Ti oxide was found on such a via. In the wafer processing, the post W chemical mechanical planarization (WCMP) cleaning left residual W oxide on the W plugs. Ti from the overlaying metal line spontaneously reduced the W oxide, through which Ti oxide formed. Compared with W oxide, the Ti oxide has a larger formation enthalpy, and the valence electrons of Ti are more tightly bound to the O ion cores. As a result, the Ti oxide is more resistive than the W oxide. Consequently, the die functioned well in the first test in the fab, but the via resistance increased significantly after a thermal stress, which led to device failure in the second test. The NH4OH concentration was therefore increased to more effectively remove residual W oxide, which solved the problem. The thermal stress had prevented the latent issue from becoming a more costly field failure.

New Carbon-bridged Hybrid Polymers for Low-k Materials

2005 ◽  
Vol 863 ◽  
Author(s):  
Bum-Gyu Choi ◽  
Byung Ro Kim ◽  
Myung-Sun Moon ◽  
Jung-Won Kang ◽  
Min-Jin Ko
Keyword(s):  
Mechanical Properties ◽  
Hybrid Materials ◽  
Chemical Mechanical Planarization ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Metal Line ◽  
Inorganic Hybrid ◽  
Low Dielectric ◽  
Continuous Stiffness Measurement ◽  
Low K

AbstractReducing interline capacitance and line resistance is required to minimize RC delays, reduce power consumption and crosstalk below 100nm node technology. For this purpose, various inorganic- and organic polymers have been tested to reduce dielectric constants in parallel with the use of copper as metal line. Lowering the dielectric constants, in particular, causes the detrimental effect on mechanical properties, and then leads to film damage and/or delamination during chemical-mechanical planarization CMP) or repeated thermal cure cycles. To overcome this issue, new carbon-bridged hybrid materials synthesized by organometallic silane precursors and sol-gel reaction are proposed.In this work, we have developed new organic-inorganic hybrid low-k dielectrics with linear or cyclic carbon bridged structures. The differently bridged carbon structures were formed by a controlled reaction. 1H NMR, 29Si NMR analysis and GC/MSD analysis were conducted for the structural characterization of new hybrid low-k dielectric. The mechanical and dielectric properties of these hybrid materials were characterized by using nanoindentation with continuous stiffness measurement and Al dot MIS techniques. The results indicated that these organic-inorganic hybrid materials were very promising polymers for low-k dielectrics that had low dielectric constants with high thermal and mechanical properties. It has been also demonstrated that electrical and mechanical properties of the hybrid films could be tailored by copolymerization with PMSSQ and through the introduction of porogen.

Retaining Ring Design Impact on CMP Process Stability and Optimization

2010 ◽  
Vol 1249 ◽  
Author(s):  
Joseph Smith ◽  
Christopher Wargo ◽  
Raghava Kakireddy ◽  
Rakesh Singh ◽  
Andrew Galpin ◽  
...  
Keyword(s):  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
High Volume ◽  
Major Effect ◽  
Process Conditions ◽  
Process Stability ◽  
Wafer Level ◽  
Lubrication Regimes ◽  
Retaining Ring ◽  
Wafer Processing

AbstractThe focus of this work is wafer retaining rings and their impact on chemical mechanical planarization (CMP) process stability, yield, and overall cost of ownership (CoO). The study looks at various CMP retaining ring materials and processing methods. Tribological investigations as well as wafer processing are critical to understand the retaining ring and polishing pad environment. Interactions at the ring/pad interface have a major effect on the planarization and defectivity of a polished wafer. Shear and normal forces at this interface, as well as temperature and lubrication regimes, were monitored to establish an empirical model. All process conditions equal, the material properties of retaining rings govern the coefficient of friction (COF) in the ring and pad contact area. Present study demonstrates a lower COF to be an indicator of extended ring lifetime, decreasing WTWNU and removal rate (RR) variation. The study correlates the findings on wafer level data from high volume manufacturing fabs with empirical data generated using applications lab tribological equipment to understand the on-wafer performance as a function of retaining ring material. The study's further aim is to understand for specific applications, the material interactions on-wafer using various retaining ring materials. CMP process optimization can be attained with a better understanding of retaining ring design and material characteristics, as well as polishing head and slurry parameters.

Effect of conditioner disc wear on frictional, thermal, kinetic and pad micro-textural attributes of interlayer dielectric and tungsten chemical mechanical planarization

2020 ◽  
Vol 59 (SL) ◽  
pp. SLLA02
Author(s):  
Juan Cristobal Mariscal ◽  
Hossein Dadashazar ◽  
Jeffrey McAllister ◽  
Yasa Sampurno ◽  
Ara Philipossian
Keyword(s):  
Chemical Mechanical Planarization ◽  
Interlayer Dielectric ◽  
Textural Attributes ◽  
And Tungsten

Improvements in Stribeck Curves for Copper and Tungsten Chemical Mechanical Planarization on Soft Pads

2017 ◽  
Vol 6 (5) ◽  
pp. P290-P295 ◽  
Author(s):  
Matthew Bahr ◽  
Yasa Sampurno ◽  
Ruochen Han ◽  
Ara Philipossian
Keyword(s):  
Chemical Mechanical Planarization ◽  
Stribeck Curves ◽  
And Tungsten

Inelastic Electron Scattering from Valence Electrons in Aluminum

1976 ◽  
Vol 34 ◽  
pp. 462-463
Author(s):  
P. E. Batson ◽  
C. H. Chen ◽  
J. Silcox
Keyword(s):  
Electron Scattering ◽  
Single Scattering ◽  
Three Dimensions ◽  
Inelastic Electron ◽  
Weak Beam ◽  
Scattering Spectrum ◽  
Valence Electrons ◽  
Diffraction Patterns ◽  
Electronic Scattering

We wish to report in this paper measurements of the inelastic scattering component due to the collective excitations (plasmons) and single particlehole excitations of the valence electrons in Al. Such scattering contributes to the diffuse electronic scattering seen in electron diffraction patterns and has recently been considered of significance in weak-beam images (see Gai and Howie) . A major problem in the determination of such scattering is the proper correction for multiple scattering. We outline here a procedure which we believe suitably deals with such problems and report the observed single scattering spectrum.In principle, one can use the procedure of Misell and Jones—suitably generalized to three dimensions (qx, qy and #x2206;E)--to derive single scattering profiles. However, such a computation becomes prohibitively large if applied in a brute force fashion since the quasi-elastic scattering (and associated multiple electronic scattering) extends to much larger angles than the multiple electronic scattering on its own.

Valence state analysis of elements by EPMA and its application

1990 ◽  
Vol 48 (2) ◽  
pp. 230-231
Author(s):  
Chen Liqing ◽  
Liu Zuqin ◽  
Zhang Wei
Keyword(s):  
Valence State ◽  
Line Intensities ◽  
Valence States ◽  
Valence Electrons ◽  
Fe And Mn ◽  
Intensity Ratios ◽  
State Analysis

Valence state analyses of Fe and Mn in oxides by EPMA have been reported in literature. In this paper, the effects of valence state on intensity ratios ILα/IKα and ILα/ILβ of Cu, Ni, Co, Fe, Mn, Cr and their oxides, and on intensity ratios ILβ2/ILα1 and ILγ1/ILα1 of Mo, Nb, Zr and their oxides were studied. It was observed that intensity ratios change with valence states in accordance with some regularities, and these effects could be utilized for analyzing the valence states of catalysts.Valence state analysis of elements by EPMA is based on the fact that changes in the states of valence electrons in the outer shells of an atom cause corresponding changes in line intensities. The M electrons of Cu, Ni, Co, Fe, Mn, Cr and the N electrons of Mo, Nb, Zr are valence electrons. Line Kα1,2 and six lines of L are produced from the transitions of K-L2,3 and L-M or L-N respectively.

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