Bottom Electrode Properties and Electrical Field Cycling Effects on HfOx based Resistive Switching Memory Device

2020 ◽  
Author(s):  
J. Li ◽  
Y. Kim ◽  
D. Kong ◽  
K. Cheng ◽  
S. -C. Seo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Driving Forces ◽  
Rapid Development ◽  
Memory Device ◽  
Forming Process ◽  
Resistive Switching Memory ◽  
Voltage Bias ◽  
Before And After ◽  
Switching Memory

Abstract The continuously growing demands in high-density memories drive the rapid development of advanced memory technologies. In this work, we investigate the HfOx-based resistive switching memory (ReRAM) stack structure at nanoscale by high resolution TEM (HRTEM) and energy dispersive X-ray spectroscopy (EDX) before and after the forming process. Two identical ReRAM devices under different electrical test conditions are investigated. For the ReRAM device tested under a regular voltage bias, material redistribution and better bottom electrode contact are observed. In contrast, for the ReRAM device tested under an opposite voltage bias, different microstructure change occurs. Finite element simulations are performed to study the temperature distributions of the ReRAM cell with filaments formed at various locations relative to the bottom electrode. The applied electric field as well as the thermal heat are the driving forces for the microstructure and chemical modifications of the bottom electrode in ReRAM deceives.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Bottom Electrode ◽  
Low Cost ◽  
Memory Devices ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device

2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory
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