Self-rectifying resistive switching behavior observed in Al2O3-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

Download Full-text

Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L.

Micromachines ◽

10.3390/mi10080540 ◽

2019 ◽

Vol 10 (8) ◽

pp. 540 ◽

Cited By ~ 1

Author(s):

Wang ◽

Wen

Keyword(s):

Bombyx Mori ◽

Resistive Switching ◽

Body Fluid ◽

The Body ◽

Fluid Film ◽

Switching Behavior ◽

Memory Devices ◽

Potential Candidate ◽

Resistive Switching Memory ◽

Switching Memory

Resistive switching memory devices are strong candidates for next-generation data storage devices. Biological memristors made from renewable natural biomaterials are very promising due to their biocompatibility, biodegradability, and ecological benignity. In this study, a nonvolatile memristor was fabricated using the body fluid of Bombyx mori as the dielectric layer. The developed Al/Bombyx mori body fluid film/indium tin oxide (ITO) biomemristor exhibited bipolar resistive switching characteristics with a maximum on/off current ratio greater than 104. The device showed a retention time of more than 1 × 104 s without any signs of deterioration, thus proving its good stability and reliability. The resistive switching behavior of the Al/Bombyx mori body fluid film/ITO biological memristor is driven by the formation and breakage of conductive filaments formed by the migration of oxygen ions. This study confirms that Bombyx mori body fluid, a 100% natural, inexpensive, and abundant material, is a potential candidate as a nonvolatile biomemristor material with broad application prospects.

Download Full-text

The Study of Au/TiO2/Au Resistive Switching Memory with Crosspoint Structure

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.652-654.659 ◽

2013 ◽

Vol 652-654 ◽

pp. 659-663 ◽

Cited By ~ 2

Author(s):

An Yan ◽

Gang Liu ◽

Chao Zhang ◽

Liang Fang

Keyword(s):

Resistive Switching ◽

Good Stability ◽

Switching Behavior ◽

Experimental Result ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Resistive Switching Memory ◽

Switching Memory

This paper presets a process of fabrication and measurements of Au/TiO2/Au resistive switching memory. The device was fabricated using crosspoint structure, and the electrode width and TiO2 film of which are 1 µm and 50 nm. According to our experimental result, resistive switching cells exhibit good stability and reliability with bipolar resistive switching behavior.

Download Full-text

Self-rectifying characteristics observed in O-doped ZrN resistive switching memory devices using Schottky barrier type bottom electrode

IEEE Access ◽

10.1109/access.2021.3118386 ◽

2021 ◽

pp. 1-1

Author(s):

Jinsu Jung ◽

Doowon Lee ◽

Sungho Kim ◽

Hee-Dong Kim

Keyword(s):

Schottky Barrier ◽

Resistive Switching ◽

Bottom Electrode ◽

Memory Devices ◽

Resistive Switching Memory ◽

Barrier Type ◽

Switching Memory

Download Full-text

Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite

NANO ◽

10.1142/s1793292020501118 ◽

2020 ◽

Vol 15 (09) ◽

pp. 2050111

Author(s):

Enming Zhao ◽

Shuangqiang Liu ◽

Xiaodan Liu ◽

Chen Wang ◽

Guangyu Liu ◽

...

Keyword(s):

Graphene Oxide ◽

Resistive Switching ◽

Flexible Substrate ◽

Random Access ◽

Polymer Nanocomposite ◽

Switching Behavior ◽

Memory Devices ◽

Resistive Switching Memory ◽

Memory Characteristic ◽

Switching Memory

Flexible resistive switching memory devices based on graphene oxide (GO) polymer nanocomposite were prepared on flexible substrate to research the influence of bending on resistive switching behavior. The devices showed evident response in resistive switching memory characteristics to flexible bending. The 2000 cycles flexible bending leads to the switch of resistive switching memory characteristic from write-once-read-many time memory (WORM) to static random access memory (SRAM). Both WORM and SRAM memory properties are all repeatable, and the threshold switching voltage also showed good consistency. The resistive switching mechanism is attributed to the formation of carbon-rich conductive filaments for nonvolatile WORM characteristics. The bending-induced micro-crack may be responsible for the partial broken of the electrical channels, and may lead to the volatile SRAM characteristics.

Download Full-text