scholarly journals THE MAJORITY -SPIN CARRIER EFFECTIVE MASS RENORMALIZATION OF THE Q2D SYSTEM

2009 ◽  
Vol 12 (12) ◽  
pp. 65-72 ◽  
Author(s):  
Nga Thi Huyen Nguyen ◽  
Thien Huy Cao ◽  
Khanh Quoc Nguyen

The majority-spin carrier effective mass renormalization of the Q2D system is studied within the leading-order dynamical screening approximation. Our treatment takes the image charge effect as well as the effect of layer thickness into account. The numerical results show that the majority-spin carrier effective mass renormalization is considerably influenced by the the effects of image charge and layer thickness.

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
M. Montagnese ◽  
S. Pagliara ◽  
G. Galimberti ◽  
S. Dal Conte ◽  
G. Ferrini ◽  
...  

2012 ◽  
Vol 100 (16) ◽  
pp. 162106 ◽  
Author(s):  
A. I. Abutaha ◽  
S. R. Sarath Kumar ◽  
H. N. Alshareef

Author(s):  
Yu Xiao ◽  
Wei Liu ◽  
Yang Zhang ◽  
Dongyang Wang ◽  
Haonan Shi ◽  
...  

Among these intricately coupled thermoelectric parameters, the carrier effective mass (m*) and carrier density (n) are two key parameters to determine the electrical transport properties. To enhance the broad-temperature thermoelectric...


MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 351-357 ◽  
Author(s):  
Erin I. Vaughan ◽  
Clay S. Mayberry ◽  
Danhong Huang ◽  
Ashwani K. Sharma

ABSTRACTThe behavior of electron and hole transport in semiconductor materials is influenced by lattice-mismatch at the interface. It is well known that carrier scattering in a confined region is dramatically reduced. In this work, we studied the effects of coupling both the strain and confinement simultaneously. We report on the fabrication and characterization of nanoscale planar, wall-like, and wire-like Si/SiO2 structures. As the Si nanostructure dimensions were scaled down to the quantum regime by thermal oxidation of the Si, changes to the band structure and carrier effective mass were observed by both optical and electrical techniques. Transient-time response measurements were performed to examine the carrier generation and recombination behavior as a function of scaling. Signal rise times decreased for both carrier types by an order of magnitude as Si dimensions were reduced from 200 to 10 nm, meaning that the carrier velocity is increasing with smaller scale structures. This result is indicative of decreased Si bandgap energy and carrier effective mass. Photoluminescence measurements taken at 50K showed changes in the PL response peak energies, which illustrates changes in the band structure, as the Si/SiO2 dimensions are scaled.


2015 ◽  
Vol 3 (13) ◽  
pp. 3087-3094 ◽  
Author(s):  
Wei-Bing Zhang ◽  
Zhi-Bo Song ◽  
Liu-Ming Dou

Halogenated silicene, with enhanced stability compared with silicene, presents a moderate and tunable direct gap with small carrier effective mass and improved elastic properties.


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