Photosynthetic Capacity, Antioxidant Activity and Molecular Responses in Parthenocissus Quinquefolia (L.) Planch Under High Temperature Stress and Subsequent Recovery

2021 ◽  
Vol 50 (2) ◽  
pp. 433-436
Author(s):  
Yuan Xue Tao ◽  
Li Fu Ping
Keyword(s):  
High Temperature ◽  
Antioxidant Enzyme ◽  
Temperature Stress ◽  
Photosynthetic Capacity ◽  
D1 Protein ◽  
Temperature Limit ◽  
High Temperature Stress ◽  
Psii Activity ◽  
Increasing Temperature ◽  
Parthenocissus Quinquefolia

Photosynthetic capacity and photosystem II (PSII) activity decreased with increasing temperature, whereas antioxidant enzyme activity showed the opposite trend. High temperature stress induced a significant increase in Φf,D, and D1 protein turnover rate. Photosynthetic capacity, PSII activity, and antioxidant enzyme levels in plants treated at 35 and 40°C were restored to control levels upon stress relief, whereas those in plants grown at 45℃ were only partially restored. Therefore, the temperature limit for heat tolerance in Parthenocissus quinquefolia is between 40 and 45℃. Further, it was observed that antioxidant enzymes were crucial for high-temperature stress resistance in P. quinquefolia, with DEGP1 protein playing a major role in the rapid turnover of D1 protein for PSII repair. Bangladesh J. Bot. 50(2): 433-436, 2021 (June)

Salix viminalis males maintain higher photosynthetic capacity than females under high temperature stress

2020 ◽  
Vol 52 (6) ◽  
Author(s):  
Fei-Fei Zhai ◽  
Yun-Xing Zhang ◽  
Hai-Dong Li ◽  
Jin-Mei Mao ◽  
Zhen-Jian Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Photosynthetic Capacity ◽  
High Temperature Stress ◽  
Salix Viminalis

scholarly journals Compensatory growth in Microcystis aeruginosa after moderate high-temperature exposure

2015 ◽  
Author(s):  
Wei Han ◽  
Yuanshu Jing ◽  
Ting Li
Keyword(s):  
High Temperature ◽  
Antioxidant Enzyme ◽  
Chlorophyll A ◽  
Temperature Stress ◽  
Enzyme Activities ◽  
Compensatory Growth ◽  
Soluble Sugar ◽  
Recovery Phase ◽  
High Temperature Stress ◽  
Antioxidant Enzyme Activities

<p align="left">This study aimed to investigate the mechanisms involved in <em>Microcystis aeruginosa</em> (<em>M. aeruginosa</em>) compensatory growth after moderate high-temperature stress. In the experiment, <em>M. aeruginosa</em> were cultured for 3, 6, and 12 d at 35°C before being transferred to normal conditions (25°C), and then cultured for 30 days for recovery. The algae that were cultured constantly at 25°C were set as control. The results showed that the growth of <em>M. aeruginosa</em> was inhibited significantly by the moderate high-temperature stress. During the recovery phase, the <em>M. aeruginosa</em> cultured at 35°C for 3, 6, and 12 days exhibited under-compensation, over-compensation, and equal-compensation, respectively. To cope with moderate high-temperature stress, <em>M. aeruginosa</em> implement various mechanisms, including increasing antioxidant enzyme activities and chlorophyll a content; adjusting compatible solutes (soluble protein and sugar). The <em>M. aeruginosa</em> cultured at 35°C for 6 days has higher antioxidant enzyme activities, relatively low malondialdehyde content, and higher soluble sugar content during the recovery phase; therefore, <em>M. aeruginosa</em> cultured at 35°C for 6 days exhibited over-compensation growth. Grey correlation analysis revealed that the increase of chlorophyll a, soluble sugar, and superoxide dismutase activity play key roles in the compensatory growth of <em>M. aeruginosa</em>.</p>

Effects of High Temperature Stress on PSII Function and Its Relation to D1 Protein in Chloroplast Thylakoid in Rice Flag Leaves

2013 ◽  
Vol 39 (6) ◽  
pp. 1060 ◽  
Author(s):  
Wei-Li YANG ◽  
Fu-Deng HUANG ◽  
Zhen-Zhen CAO ◽  
Bing-Ting LEI ◽  
Dong-Wei HU ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
D1 Protein ◽  
High Temperature Stress ◽  
Flag Leaves

Assessment of wheat (Triticum aestivum L.) genotypes for high temperature stress tolerance using physico-chemical analysis

2020 ◽  
Vol 53 (2) ◽  
Author(s):  
Khalil Ahmed Laghari ◽  
Abdul Jabbar Pirzada ◽  
Mahboob Ali Sial ◽  
Muhammad Athar Khan ◽  
Jamal Uddin Mangi
Keyword(s):  
Triticum Aestivum ◽  
High Temperature ◽  
Chemical Analysis ◽  
Stress Tolerance ◽  
Temperature Stress ◽  
Triticum Aestivum L ◽  
High Temperature Stress ◽  
Physico Chemical

Genome-wide identification and analysis of maize PAL gene family and its expression profile in response to high-temperature stress

2020 ◽  
Vol 52 (5) ◽  
Author(s):  
De-Gong Wu ◽  
Qiu-Wen Zhan ◽  
Hai-Bing Yu ◽  
Bao-Hong Huang ◽  
Xin-Xin Cheng ◽  
...  
Keyword(s):  
High Temperature ◽  
Gene Family ◽  
Temperature Stress ◽  
Expression Profile ◽  
High Temperature Stress ◽  
Genome Wide

Impact of Metal Pad Etch-Induced Plasma Damage on Dynamic Retention Time Degradation during High Temperature Stress in High Density DRAM Technology

2005 ◽  
Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Retention Time ◽  
High Temperature Stress ◽  
High Density ◽  
Cell Junction ◽  
Antenna Effect ◽  
Plasma Damage ◽  
Root Cause ◽  
Wafer Processing

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.

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