2-Positional pyrene end-capped oligothiophenes for high performance organic field effect transistors

2016 ◽  
Vol 52 (26) ◽  
pp. 4800-4803 ◽  
Author(s):  
Kazuaki Oniwa ◽  
Hiromasa Kikuchi ◽  
Hidekazu Shimotani ◽  
Susumu Ikeda ◽  
Naoki Asao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Central Unit ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
Effect Transistor

A new co-oligomer BPy2T with two 2-positional pyrenes as terminal groups and bithiophene as a central unit showed a high hole mobility of 3.3 cm2 V−1 s−1 in a single crystal field effect transistor.

scholarly journals Self-Assemble Monolayer Dependent Field Effect Transistor’s Performance Based On Tetracene Single-Crystal

2013 ◽  
Vol 25 (2) ◽  
pp. 194-199 ◽  
Author(s):  
Md. Minarul Islam
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Chemical Society ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
Effect Transistor ◽  
Self Assemble Monolayer

Organic field effect transistors with an active layer based on the tetracene single-crystal were fabricated. It was found that organosilane self-assemble monolayer (SAM) modified device with tetracene single-crystals gave higher mobility and on/off ratio rather than untreated device. SAM modified tetracene single-crystal transistors with parylene gate insulator showed the highest mobility of 0.66 cm2 V-1 s-1 and high on/off ratio of ~104. This finding demonstrates that SAM treatment decrease the charge leakage between source and drain which help to decrease the off current with greater extent and increase the on current slightly of the tetracene single-crystal field-effect transistors. Journal of Bangladesh Chemical Society, Vol. 25(2), 194-199, 2012 DOI: http://dx.doi.org/10.3329/jbcs.v25i2.15086

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

A bowl-shaped sumanene derivative with dense convex–concave columnar packing for high-performance organic field-effect transistors

2017 ◽  
Vol 53 (83) ◽  
pp. 11407-11409 ◽  
Author(s):  
Beibei Fu ◽  
Xueqing Hou ◽  
Cong Wang ◽  
Yu Wang ◽  
Xiaotao Zhang ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
First Time

The charge carrier mobility of a sumanene derivative was probed using single-crystal field-effect transistors for the first time.

scholarly journals Stencil mask defined doctor blade printing of organic single crystal array for high-performance organic field-effect transistors

2021 ◽  
Author(s):  
Yue Xi ◽  
Tao Wang ◽  
Qi Mu ◽  
Congcong Huang ◽  
Shuming Duan ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic P ◽  
Organic Field Effect Transistors ◽  
Stencil Mask ◽  
Organic Single Crystal ◽  
Effect Transistor ◽  
Amorphous Si

Organic field-effect transistor (OFET) is one of the promising candidates for next generation electronics due to its solution processability and good performance superior to amorphous Si devices. Patterning the organic...

Synthesis and characterization of carbazolo[2,1-a]carbazole in thin film and single crystal field-effect transistors

2017 ◽  
Vol 5 (28) ◽  
pp. 7020-7027 ◽  
Author(s):  
Miriam Más-Montoya ◽  
José Pedro Cerón-Carrasco ◽  
Shino Hamao ◽  
Ritsuko Eguchi ◽  
Yoshihiro Kubozono ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Synthesis And Characterization ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect

Carbazole-based azaphenacene with high performance in organic field-effect transistors.

Single crystal field-effect transistor of tetrabenzoporphyrin with a one-dimensionally extended columnar packing motif exhibiting efficient charge transport properties

2021 ◽  
Author(s):  
Juanjuan Zhu ◽  
Hironobu Hayashi ◽  
Meng Chen ◽  
Chengyi Xiao ◽  
Kyohei Matsuo ◽  
...  
Keyword(s):  
Metal Complexes ◽  
Single Crystal ◽  
Charge Transport ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Hole Mobility ◽  
Crystal Field Effect ◽  
Efficient Charge ◽  
Effect Transistor

The single crystal field-effect transistor of 5,15-bis(triisopropylsilyl)ethynyltetrabenzoporphyrin exhibited better hole mobility than its metal complexes, with efficient charge transport through π–π stacking along tetrabenzoporphyrin units.

scholarly journals Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Vital Role ◽  
Semiconductor Material ◽  
Mathematical Equations ◽  
Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

scholarly journals Diamond Based Field-Effect Transistors of Zr Gate withSiNxDielectric Layers

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
W. Wang ◽  
C. Hu ◽  
S. Y. Li ◽  
F. N. Li ◽  
Z. C. Liu ◽  
...  
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Conduction Channel ◽  
Effect Transistor ◽  
P Type ◽  
Interface Bond ◽  
Transfer Properties

Investigation of Zr-gate diamond field-effect transistor withSiNxdielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of theSiNxdielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

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