scholarly journals Influence of Te Vacancies on the Thermoelectric Properties of n-type Cu0.008Bi2Te2.7-xSe0.3

2020 ◽  
Vol 58 (10) ◽  
pp. 721-727
Author(s):  
Yerim Yang ◽  
TaeWan Kim ◽  
Seokown Hong ◽  
Jiwoo An ◽  
Sang-il Kim
Keyword(s):  
Thermal Conductivity ◽  
Transport Properties ◽  
Point Defect ◽  
Thermoelectric Properties ◽  
Thermal Transport ◽  
Phonon Scattering ◽  
Band Model ◽  
Total Thermal Conductivity ◽  
Thermal Transport Properties ◽  
Callaway Model

In this study, we report the influence of Te vacancy formation on the thermoelectric properties of n-type Cu0.008Bi2Te2.7Se0.3 alloys, including their electronic and thermal transport properties. Te-deficient Cu0.008Bi2Te2.7-xSe0.3 (x = 0, 0.005, 0.01 and 0.02) samples were systematically synthesized and characterized. Regarding electronic transport properties, carrier concentration was increased with Te vacancies, while carrier mobility was maintained. As a result, the electrical conductivity significantly increased while the Seebeck coefficient reduced moderately, thus, the power factor was enhanced from 3.04 mW/mK<sup>2</sup> (pristine) to 3.22 mW/mK<sup>2</sup> (x = 0.02) at 300 K. Further analysis based on a single parabolic band model revealed that the weighted mobility of the conduction band increased, which is favorable for electron transport, as Te vacancies were generated. Regarding thermal transport properties, lattice thermal conductivity decreased with Te vacancies due to additional point defect phonon scattering, however, total thermal conductivity increased due to larger electronic contribution as Te vacancies increased. Analysis using the Debye-Callaway model suggests that the phonon scattering by the Te vacancies is as efficient as the substitution point defect scattering. Consequently, the thermoelectric figure of merit zT increased at all temperatures for x = 0.005 and 0.01. The maximum zT of 0.95 was achieved for Te-deficient Cu0.008Bi2Te2.69Se0.3 (x = 0.01) at 400 K.

scholarly journals Reduction of Lattice Thermal Conductivity in PbTe Induced by Artificially Generated Pores

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Jae-Yeol Hwang ◽  
Eun Sung Kim ◽  
Syed Waqar Hasan ◽  
Soon-Mok Choi ◽  
Kyu Hyoung Lee ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Pore Structure ◽  
Transport Properties ◽  
Thermoelectric Materials ◽  
Thermal Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Phonon Modes ◽  
Thermal Transport Properties

Highly dense pore structure was generated by simple sequential routes using NaCl and PVA as porogens in conventional PbTe thermoelectric materials, and the effect of pores on thermal transport properties was investigated. Compared with the pristine PbTe, the lattice thermal conductivity values of pore-generated PbTe polycrystalline bulks were significantly reduced due to the enhanced phonon scattering by mismatched phonon modes in the presence of pores (200 nm–2 μm) in the PbTe matrix. We obtained extremely low lattice thermal conductivity (~0.56 W m−1 K−1at 773 K) in pore-embedded PbTe bulk after sonication for the elimination of NaCl residue.

scholarly journals Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

2017 ◽  
Author(s):  
Mi-Kyung Han ◽  
Yingshi Jin ◽  
Da-Hee Lee ◽  
Sung-Jin Kim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Thermal Transport ◽  
Co Doping ◽  
Thermal Transport Properties ◽  
Co Doped

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi2Te3, n-type Bi2Te3 co-doped with x at% CuI and 1/2x at% Pb (x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi2Te3 were measured in the temperature range from 300 K to 523 K and compared to corresponding x% of CuI-doped Bi2Te3 and undoped Bi2Te3. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi2Te3 rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(&kappa;tot) of co-doped samples (&kappa;tot ~1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi2Te3 (&kappa;tot~1.5 W/m∙K at 300 K) and undoped Bi2Te3 (&kappa;tot ~1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi2Te3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi2Te3 and its operating temperature can be controlled by co-doping.

Atomistic Simulations of Heat Transport in Carbon Nanotubes Effected by Temperature and Stretch Strain

2011 ◽  
Vol 320 ◽  
pp. 38-44 ◽  
Author(s):  
Qing Yuan Meng ◽  
Yu Fei Gao ◽  
Xian Qin
Keyword(s):  
Thermal Conductivity ◽  
Carbon Nanotubes ◽  
Low Temperature ◽  
Transport Properties ◽  
Thermal Transport ◽  
Phonon Scattering ◽  
Quantum Effect ◽  
Axial Strain ◽  
Thermal Transport Properties ◽  
Dynamic Structures

Carbon nanotubes (CNTs) is a well thermal transport nano materials, however, the thermal conductivity of CNTs has not been well established, only a few groups had reported experimental data and the existed simulation results ranged widely. Specially, the conclusions in low temperature section and dynamic structures were not very clearly. In this paper, the methods based on phonon scattering theory were applied to explore the thermal transport properties CNTs. The investigation was carried out under the conditions of temperature and axial strain. In the consideration of quantum effect, the thermal conductivity increased linearly with the growth of temperature in low-temperature section, and began to decrease gradually when the temperature exceeded a definite value. If an axial strain was concerned, there was an increasing trend of thermal conductivity as the stretch strain increases. However, after the strain exceeded a particular value the thermal conductivity decreased significantly. In addition, the high frequency phonon peak in PDOS was found to be an important parameter in describing thermal transport properties of dynamic structures.

scholarly journals Study of anisotropic thermal conductivity in textured thermoelectric alloys by Raman spectroscopy

RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Transport Properties ◽  
Thermal Transport ◽  
Layered Crystal ◽  
Layered Crystal Structure ◽  
Thermal Transport Properties ◽  
Anisotropic Thermal Conductivity ◽  
P Type

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.

Thermal transport properties of monolayer MoSe2 with defects

2020 ◽  
Vol 22 (10) ◽  
pp. 5832-5838 ◽  
Author(s):  
Jiang-Jiang Ma ◽  
Jing-Jing Zheng ◽  
Wei-Dong Li ◽  
Dong-Hong Wang ◽  
Bao-Tian Wang
Keyword(s):  
Thermal Conductivity ◽  
Transport Properties ◽  
Thermal Transport ◽  
Lattice Thermal Conductivity ◽  
Thermal Transport Properties

The defects in monolayer MoSe2 have a significant effect on its lattice thermal conductivity.

Annealing Studies of Re Doped AlPdMn Quasicrystals

2001 ◽  
Vol 691 ◽  
Author(s):  
Donny W. Winkler ◽  
Terry M. Tritt ◽  
Robert Gagnon ◽  
J. Strom-Olsen
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Transport Properties ◽  
Thermal Transport ◽  
Amorphous Materials ◽  
Annealed Sample ◽  
Annealing Conditions ◽  
Thermal Transport Properties ◽  
The Relationship

ABSTRACTQuasicrystals have properties associated with both crystalline and amorphous materials. These properties appear to be sensitive to both composition and annealing conditions. Therefore, it is important to investigate the influence of the microstructure on the electrical and thermal transport properties of quasicrystals. AlPdMn quasicrystal samples were prepared with various levels of Re substituted for the Mn (Al70Pd20Mn10−XReX) and then subjected to different annealing conditions. Electrical resistivity, thermopower and thermal conductivity were measured on each as grown and annealed sample over a broad range of temperature, 10 K < T < 300 K. The relationship between the electrical and thermal transport properties and microstructure will be presented and discussed.

Evidence of a Order-Disorder Transition in the Crystalline Phase of Cd6Yb, 1/1 cubic approximant of icosahedral Cd 5.7 Yb

2003 ◽  
Vol 793 ◽  
Author(s):  
N. Sorloaica ◽  
A. L. Pope ◽  
D. W. Winkler ◽  
Terry M. Tritt ◽  
V. Keppens ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Heat Capacity ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Crystalline Phase ◽  
Thermal Transport ◽  
Hysteretic Behavior ◽  
Disorder Transition ◽  
Temperature Range ◽  
Thermal Transport Properties

ABSTRACTThe electrical and thermal transport properties (electrical resistivity, thermopower, heat capacity and thermal conductivity) of the crystalline phase of the binary Cd6Yb system has been measured over a temperature range from 10 K to 300 K. Evidence for a phase transition in Cd6Yb is observed in the electrical transport properties with distinct changes in the temperature dependence of the resistivity and thermopower around T ≈ 110K. An anomaly in the heat capacity and a thermal conductivity is also observed at this same temperature. Hysteretic behavior is not evident in the temperature dependence of any of the electrical and thermal transport properties. In addition, the elastic properties using resonant ultrasound (RUS) techniques have been investigated over a similar temperature range. A large “resonance dip” is observed in the RUS data at T ≈ 110K, which is indicative of some type of structural change in the crystalline material at this temperature. These data will be presented and discussed in context of the undergoes reversible order-disorder transition in the 1/1 cubic approximant at about 110 K, which makes the system very interesting compared to the quasicrystal phase Cd5.7Yb

Thermal Transport Properties of Various Thin Films for MEMS Applications

2006 ◽  
Vol 326-328 ◽  
pp. 293-296
Author(s):  
Sun Rock Choi ◽  
Dong Sik Kim ◽  
Sung Hoon Choa
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Transport Properties ◽  
Thermal Transport ◽  
Metallic Thin Films ◽  
Micro Electro Mechanical Systems ◽  
Thermal Transport Properties ◽  
Atomic Force Microscope Measurement ◽  
Evaporation Technique ◽  
Thermal Diffusivities

The thermal properties of thin films, such as thermal conductivity and diffusivity, are important in design and analysis of MEMS (micro electro mechanical systems), particularly in microscale thermal systems and high-power electronic/optoelectronic devices. In the present study, the thermal conductivity and diffusivity of a variety of thin film materials, which are commonly used in MEMS applications, are measured. The samples include Au, Sn, Mo, Al/Ti alloy, AlN, and SiC. The Au sample is deposited by the e-beam evaporation technique while the rest of the metallic samples are deposited by sputtering processes. The AlN and SiC films are also prepared by sputtering processes. In the experiment, the thermal diffusivities of metallic thin films are measured by two independent methods — the AC calorimetric method and photothermal mirage technique. The thermal conductivities of dielectric thin films are measured by the 3 omega technique. The results show that the thermal transport properties of some of the films are significantly smaller than those of the same material in bulk form. Especially, the AlN and SiC thin films exhibit pronounced thermal conductivity reduction because of the size effect. The electrical conductivities of the metallic thin films are measured as well. The results for Au and Sn are consistent with the thermal conductivity, confirming the Wiedmann-Franz law. However, Al/Ti and Mo thin films show considerable deviation from the law. The results are analyzed based on the XRD (X-Ray diffraction) and AFM (Atomic Force Microscope) measurement.

scholarly journals Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study

2018 ◽  
Vol 20 (7) ◽  
pp. 5159-5172 ◽  
Author(s):  
Konstantinos Termentzidis ◽  
Mykola Isaiev ◽  
Anastasiia Salnikova ◽  
Imad Belabbas ◽  
David Lacroix ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Transport Properties ◽  
Thermal Transport ◽  
Thermal Transport Properties ◽  
Bulk Gan ◽  
Dynamics Simulations ◽  
Edge Dislocations

The thermal transport properties of nanowires and bulk GaN in the presence of different dislocations using molecular dynamics simulations are reported.

Sign in / Sign up

Export Citation Format

Share Document