scholarly journals Effects of LaNiO3 Seed Layer on the Microstructure and Electrical Properties of Ferroelectric BZT/PZT/BZT Thin Films

2021 ◽  
Vol 8 ◽  
Author(s):  
Jinyu Ruan ◽  
Chao Yin ◽  
Tiandong Zhang ◽  
Hao Pan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Electrical Properties ◽  
Seed Layer ◽  
Ferroelectric Properties ◽  
Lower Surface ◽  
Multilayer Films ◽  
Multilayer Thin Films ◽  
Orientation Growth

Ferroelectric multilayer films attract great attention for a wide variation of applications. The synergistic effect by combining different functional layers induces distinctive electrical properties. In this study, ferroelectric BaZr0.2Ti0.8O3/PbZr0.52Ti0.48O3/BaZr0.2Ti0.8O3 (BZT/PZT/BZT) multilayer thin films are designed and fabricated by using the magnetron sputtering method, and a LaNiO3 (LNO) seed layer is introduced. The microstructures and electrical properties of the BZT/PZT/BZT films with and without the LNO seed layer are systematically studied. The results show that the BZT/PZT/BZT/LNO thin film exhibits much lower surface roughness and a preferred (100)-orientation growth, with the growth template and tensile stress provided by the LNO layer. Moreover, an enhanced dielectric constant, decreased dielectric loss, and improved ferroelectric properties are achieved in BZT/PZT/BZT/LNO thin films. This work reveals that the seed layer can play an important role in improving the microstructure and properties of ferroelectric multilayer films.

Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

2005 ◽  
Vol 902 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Switching Field ◽  
Mn Doping ◽  
Mn Doped

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

Optimization of Cr Seed Layer Effect for Surface Roughness of As-Deposited Silver Film using Electron Beam Deposition Method

2020 ◽  
Vol 42 (1) ◽  
pp. 23-23
Author(s):  
Naseem Abbas Naseem Abbas ◽  
Muzamil Hussain Muzamil Hussain ◽  
Nida Zahra Nida Zahra ◽  
Hassaan Ahmad Hassaan Ahmad ◽  
Syed Muhammad Zain Mehdi Syed Muhammad Zain Mehdi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Electron Beam ◽  
Layer Thickness ◽  
Borosilicate Glass ◽  
Seed Layer ◽  
Deposition Method ◽  
Different Thickness ◽  
Beam Deposition

The surface roughness is an important parameter in determining the physical properties and quality of thin films deposited by physical vapor deposition (PVD) method. The presence of an intermediate layer between metallic nanoparticles and substrate significantly promotes the adhesion and reduces the surface roughness. In this article, we have investigated the effect of Chromium (Cr) seed layer to optimize the surface roughness on the growth of as-deposited silver (Ag) film using borosilicate glass and silicon wafer substrates. For this purpose, Ag thin films were deposited with a Cr seed layer of different thickness on borosilicate glass and silicon wafer substrates using an electron beam (E-Beam) deposition method. The Cr thin film of different thickness ranging from 1 nm to 6 nm was thermally evaporated and pure Ag with the same thickness was evaporated at the same rate on previously coated substrates. The deposition of the nanostructured thin film was confirmed by UV-Vis and XRD characterizations. The difference in transmittance for uncoated and coated substrates ensured the deposition. The presence of pure Ag crystalline phase was confirmed by XRD pattern. Surface roughness was measured using Atomic Force Microscopy (AFM) and the conductance was measured using 4-probe conductivity method. The density of nanoparticles and smoothness were visualized from two dimensional (2D) and three dimensional (3D) surface height histograms of representative AFM images. The quantitative roughness was measured in terms of root mean square (RMS) roughness and mean roughness. The high dense and smoother thin films were found for ~2-4 nm Cr layer thickness in case of the glass substrate. The slight increase in roughness was observed for ~1-6 nm Cr layer thickness in case of the silicon substrate. The dependence of the conductivity of thin films on surface roughness is investigated to verify the effect of surface roughness on different applications of Ag thin film. The conductance results have been analyzed as; for a glass substrate, conductivity was maximum for thin films containing ~2 nm Cr seed layer thickness, while for silicon substrate the maximum conductivity was found for the thin film containing ~1 nm Cr seed layer.

scholarly journals Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

2021 ◽  
Author(s):  
M.L.V. Mahesh ◽  
Prem Pal ◽  
Bhanu Prasad V.V. ◽  
A.R. James
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sem Analysis ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
Low Loss ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current

Abstract Multilayer thin films of (Ba0.50Sr0.50)TiO3 (BST) and Ba(Zr0.15Ti0.85)O3 (BZT) were designed and grown using Pulsed LASER Deposition technology. The periodic (BST/BZT)n thin films were deposited on Pt‹111›/SiO2/Si substrates. X-ray diffraction reveals the presence of a polycrystalline, perovskite structure corresponding to the bilayer thin film stacks. SEM analysis confirmed the multilayer structure without any interdiffusion across layers. It was also found that the dielectric and ferroelectric properties of the thin films are strongly influenced by the periodic hetero-structures. The thin film stacks exhibit significantly higher tunabilities, comparable with multilayer thin films grown on various single crystal substrates such as LaAlO3, MgO and SrTiO3. Possible mechanisms explaining the other observed attributes such as lower dielectric loss resulting in higher Figure of Merit (FoM), low leakage current are discussed. The effect of incorporating a comparatively lower permittivity thin film in the multilayer stacks is presented. The observed properties of such multilayer structured films help in realization of low loss and highly tunable applications.

Optical and Electrical Properties of ITO/Ag/ITO Multilayer Thin Films Deposited by D.C. Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 403-406 ◽  
Author(s):  
Yong Lak Choi ◽  
Seon Hwa Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Layer Thickness ◽  
Sheet Resistance ◽  
Multilayer Thin Films ◽  
Optical And Electrical Properties ◽  
Columnar Phase

ITO monolayer and ITO/Ag/ITO multilayer thin films are prepared by D.C. magnetron sputtering method, optical and electrical properties were estimated with different crystalline properties and microstructures. The coated Ag layer thickness was around 50 , and the surface of ITO/Ag/ITO thin film had the very fine island morphology. The growth of columnar phase was inhibited, and most of phases were amorphous. The carrier concentration increased above 10 times because of the effect of Ag layer, and the observed sheet resistance gave much lower value of below 4 / compared to that of coated crystalline ITO thin film that was 10 / , and the transmittance was 80%.

Improvement of the Reliability of Thin-Film Interconnections Based on the Control of the Crystallinity of the Thin Films

2013 ◽  
Author(s):  
Osamu Asai ◽  
Ryosuke Furuya ◽  
Chuanhong Fan ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Current Density ◽  
Seed Layer ◽  
Electron Back Scatter Diffraction ◽  
Residual Tensile Stress ◽  
Strong Constraint ◽  
Electroplated Copper ◽  
Electrical Reliability

Electroplated copper thin films have started to be applied to not only interconnections in printed wiring boards, but also thin film interconnections and TSV (Through Silicon Via) in semiconductor devices because of its low electric resistivity and high thermal conductivity. Thus, the electrical reliability of the electroplated copper interconnections was discussed experimentally. The relationship between the electrical properties and crystallographic quality (crystallinity) of electroplated copper thin-film interconnections was investigated. The crystallinity of the grains and grain boundaries of the interconnections was evaluated on the basis of the image quality (IQ) value obtained by electron back-scatter diffraction (EBSD) analysis. The electrical properties of the interconnections vary significantly depending on their crystallinity. The crystallinity also changed drastically as functions of electroplating conditions and the annealing temperature after electroplating. Although the electro migration (EM) resistance of the annealed interconnection is improved, the stress-induced migration (SM) is activated by a high residual tensile stress after annealing caused by the strong constraint of the shrinkage of the film during recrystallization. To improve its electrical reliability without heat treatment after the electroplating, the effects of the seed layer under the interconnections on the crystallinity of the electroplated film was investigated. As a result, the crystallinity was improved by changing the seed layer from Cu to Ru. In addition, the decrease in current density during electroplating also improves the crystallinity. Therefore, both introducing the Ru seed layer in addition to decreasing the current density during electroplating is effective for developing highly reliable copper interconnections.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Development of the Structural, Optical, and Electrical Properties of PEDOT:PSS Conducting Polymer Thin Film for Energy Applications

2021 ◽  
Vol 902 ◽  
pp. 65-70
Author(s):  
Samar Aboulhadeed ◽  
Mohsen Ghali ◽  
Mohamad M. Ayad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Conducting Polymer ◽  
Film Surface ◽  
Volume Ratio ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Energy Applications

We report on a development of the structural, optical and electrical properties of poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) conducting polymer thin films. The PEDOT:PSS thin films were deposited by a controlled thin film applicator and their physical properties were found to be effectively modified by isopropanol. The deposited films were investigated by several techniques including XRD, UV–Vis, SPM and Hall-effect. Interestingly, by optimizing the PEDOTS:PSS/ISO volume ratio (v:v), we find that the film charge carriers type can be switched from p to n-type with a high bulk carriers concentration reaching 6×1017 cm-3. Moreover, the film surface roughness becomes smoother and reaching a small value of only 1.9 nm. Such development of the PEDOT:PSS film properties makes it very promising to act as an electron transport layer for different energy applications.

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