A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links

We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channels per die, which are adapted for a flip-chip assembly into a mid-board optics (MBO) optical transceiver module. The ICs are designed in the IHP 130 nm SiGe BiCMOS process (SG13RH) leveraging proven robustness in radiation environments and high-speed performance featuring bipolar transistors (HBTs) with fT/fMAX values of up to 250/340 GHz. Besides hardening by technology, radiation-hardened-by-design (RHBD) components are used, including enclosed layout transistors (ELTs) and digital logic cells. We report design features of the ICs and the module, and provide performance data from post-layout simulations. We present radiation evaluation data on analog devices and digital cells, which indicate that the transceiver ICs will reliably operate at typical total ionizing dose (TID) levels and single event latch-up thresholds found in geostationary satellites.

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(GaIn)(NAsSb): MBE GROWTH, HETEROSTRUCTURE AND NANOPHOTONIC DEVICES

International Journal of Nanoscience ◽

10.1142/s0219581x07004699 ◽

2007 ◽

Vol 06 (03n04) ◽

pp. 269-274

Author(s):

JAMES S. HARRIS

Keyword(s):

Photonic Crystal ◽

Integrated Circuits ◽

High Speed ◽

Active Regions ◽

Phase Segregation ◽

Plasma Source ◽

Cavity Surface ◽

Dilute Nitride ◽

Vertical Cavity Surface ◽

Emitting Lasers

Dilute nitride GaInNAs and GaInNAsSb alloys grown on GaAs have quickly become excellent candidates for a variety of lower cost 1.2–1.6 μm lasers, optical amplifiers, and high power Raman pump lasers that will be required in the networks to provide high speed communications to the desktop. Because these quantum well active regions can be grown on GaAs , the distributed mirror technology for vertical cavity surface emitting lasers coupling into waveguides and fibers and photonic crystal structures can be readily combined with GaInNAsSb active regions to produce a variety of advanced photonic devices that will be crucial for advanced photonic integrated circuits. GaInNAs ( Sb ) provides several new challenges compared to earlier III–V alloys because of the limited solubility of N , phase segregation, nonradiative defects caused by the low growth temperature, and ion damage from the N plasma source. This paper describes progress in overcoming some of the material challenges and progress in realizing record setting edge emitting lasers, the first VCSELs operating at 1.5 μm based on GaInNAsSb and integrated photonic crystal and nanoaperture lasers.

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High-Speed and High-Power 940 nm Flip-Chip VCSEL Array for LiDAR Application

Crystals ◽

10.3390/cryst11101237 ◽

2021 ◽

Vol 11 (10) ◽

pp. 1237

Author(s):

Kuo-Bin Hong ◽

Wei-Ta Huang ◽

Hsin-Chan Chung ◽

Guan-Hao Chang ◽

Dong Yang ◽

...

Keyword(s):

High Power ◽

High Speed ◽

Flip Chip ◽

Maximum Output Power ◽

Thermal Characteristics ◽

Cavity Surface ◽

Maximum Output ◽

Two Samples ◽

Vertical Cavity Surface ◽

Surface Emitting Laser

In this paper, we demonstrate the design and fabrication of a high-power, high-speed flip-chip vertical cavity surface emitting laser (VCSEL) for light detection and ranging (LiDAR) systems. The optoelectronic characteristics and modulation speeds of vertical and flip-chip VCSELs were investigated numerically and experimentally. The thermal transport properties of the two samples were also numerically investigated. The measured maximum output power, slope efficiency (SE) and power conversion efficiency (PCE) of a fabricated flip-chip VCSEL array operated at room-temperature were 6.2 W, 1.11 W/A and 46.1%, respectively. The measured L-I-V curves demonstrated that the flip-chip architecture offers better thermal characteristics than the conventional vertical structure, especially for high-temperature operation. The rise time of the flip-chip VCSEL array was 218.5 ps, and the architecture of the flip-chip VCSEL with tunnel junction was chosen to accommodate the application of long-range LiDAR. The calculated PCE of such a flip-chip VCSEL was further improved from 51% to 57.8%. The device design concept and forecasting laser characteristics are suitable for LiDAR systems.

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Vertical-Cavity Surface-Emitting Lasers: High-Speed Performance and Analysis

Optoelectronic Devices ◽

10.1007/0-387-27256-9_9 ◽

2006 ◽

pp. 249-292 ◽

Cited By ~ 1

Author(s):

J. S. Gustavsson ◽

J. Bengtsson ◽

A. Larsson

Keyword(s):

High Speed ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Speed Performance ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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Structural changes in silicon-on-insulator material during post-implantation annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145054 ◽

1986 ◽

Vol 44 ◽

pp. 736-737

Author(s):

C. O. Jung ◽

S. J. Krause ◽

S.R. Wilson

Keyword(s):

Integrated Circuits ◽

Oxide Layer ◽

High Speed ◽

Structural Changes ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Quality ◽

Radiation Hardened ◽

Post Implantation ◽

Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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High-speed vertical-cavity surface-emitting laser (VCSEL) absorption spectroscopy of ammonia (NH3) near 1.54 μm

Applied Physics B ◽

10.1007/s00340-003-1102-1 ◽

2003 ◽

Vol 76 (5) ◽

pp. 603-608 ◽

Cited By ~ 33

Author(s):

G. Totschnig ◽

M. Lackner ◽

R. Shau ◽

M. Ortsiefer ◽

J. Rosskopf ◽

...

Keyword(s):

Absorption Spectroscopy ◽

High Speed ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity

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Hexagonal transverse-coupled-cavity VCSEL redefining the high-speed lasers

Nanophotonics ◽

10.1515/nanoph-2020-0437 ◽

2020 ◽

Vol 9 (16) ◽

pp. 4743-4748

Author(s):

Elham Heidari ◽

Hamed Dalir ◽

Moustafa Ahmed ◽

Volker J. Sorger ◽

Ray T. Chen

Keyword(s):

High Speed ◽

Single Mode ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Injection Currents ◽

Vertical Cavity ◽

Coupled Cavity ◽

Modulation Speed

AbstractVertical-cavity surface-emitting lasers (VCSELs) have emerged as a vital approach for realizing energy-efficient and high-speed optical interconnects in the data centers and supercomputers. Indeed, VCSELs are the most suitable mass production lasers in terms of cost-effectiveness and reliability. However, there are still key challenges that prevent achieving modulation speeds beyond 30s GHz. Here, we propose a novel VCSEL design of a hexagonal transverse-coupled-cavity adiabatically coupled through a central cavity. Following this scheme, we show a prototype demonstrating a 3-dB roll-off modulation bandwidth of 45 GHz, which is five times greater than a conventional VCSEL fabricated on the same epiwafer structure. This design harnesses the Vernier effect to increase the laser’s aperture and therefore is capable of maintaining single-mode operation of the laser for high injection currents, hence extending the dynamic roll-off point and offering increases power output. Simultaneously, extending both the laser modulation speed and output power for this heavily deployed class of lasers opens up new opportunities and fields of use ranging from data-comm to sensing, automotive, and photonic artificial intelligence systems.

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