scholarly journals Milliwatt-Level Spontaneous Emission Across the 3.5–8 µm Spectral Region from Pr3+ Doped Selenide Chalcogenide Fiber Pumped with a Laser Diode

2020 ◽  
Vol 10 (2) ◽  
pp. 539 ◽  
Author(s):  
Lukasz Sojka ◽  
Zhuoqi Tang ◽  
Dinuka Jayasuriya ◽  
Meili Shen ◽  
Joel Nunes ◽  
...  
Keyword(s):  
Environmental Monitoring ◽  
Spontaneous Emission ◽  
Wavelength Range ◽  
Laser Diode ◽  
Spectral Region ◽  
Laser Diodes ◽  
Molecular Sensing ◽  
Mid Infrared ◽  
Sensing Applications ◽  
First Time

A spontaneous emission fiber source operating in the mid-infrared (MIR) wavelength range from 3.5 to 8 µm is demonstrated for the first time at output power levels of at least 1 mW. The source is a Pr3+-doped selenide chalcogenide, multimode, glass fiber pumped with commercially available laser diodes operating at 1.470 µm, 1.511 µm and 1.690 µm. This MIR spontaneous emission fiber source offers a viable alternative to broadband mid-infrared supercontinuum fiber sources, which are comparatively complex and costly. The MIR emission wavelength range is significant for molecular sensing applications across biology and chemistry, and in medicine, agriculture, defense, and environmental monitoring.

GaSb-based D-DFB laser diodes for gas sensing applications in the mid-infrared region

2021 ◽  
Author(s):  
Morten Hoppe ◽  
Christian Assmann ◽  
Sebastian Schmidtmann ◽  
Tobias Milde ◽  
Martin Honsberg ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Laser Diodes ◽  
Infrared Region ◽  
Mid Infrared ◽  
Sensing Applications ◽  
Dfb Laser

scholarly journals 2.3 µm InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate

2016 ◽  
Vol 2016 ◽  
pp. 1-4
Author(s):  
Minghui You ◽  
Qixiang Sun ◽  
Liping Yin ◽  
Juanjuan Fan ◽  
Xuemei Liang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Gaas Substrate ◽  
High Performance ◽  
Laser Diodes ◽  
Type I ◽  
Free Carrier Absorption ◽  
Mid Infrared ◽  
Quantum Well Laser ◽  
Carrier Absorption ◽  
Superlattice Layer

We present 2.3 μm InGaAsSb/AlGaAsSb type I laser diodes (LDs) on GaAs substrate; a superlattice (SL) layer was introduced as an interconnecting layer playing an important role in manipulating the optical field distribution and reducing free-carrier absorption in multiquantum wells (MQWs) for achieving balanced and optimal LDs performance. Accordingly, power of 8.6 mW was obtained with 2.3 μm wavelength. Our results demonstrate that superlattice layer may open a new avenue for high performance and improvement in mid-infrared laser diode.

Metallization Systems for Bonding of InP Laser Diodes to CVD-Diamond Submounts

1992 ◽  
Vol 260 ◽  
Author(s):  
A. Katz ◽  
K-W. Wang ◽  
F. A. Baiocchi ◽  
W. C. Dautremont-Smith ◽  
E. Lane ◽  
...  
Keyword(s):  
Laser Diode ◽  
Laser Diodes ◽  
Cvd Diamond ◽  
Liquid Composition ◽  
Superior Performance ◽  
Electrical Performance ◽  
Eutectic Liquid ◽  
Processing Window ◽  
First Time ◽  
Heating Duration

ABSTRACTSome metallization systems consisting of barrier metals and Au-Sn (multiple alternating layers) were studied as a bonding schemes of InP-based laser diodes to the first time used, CVD-diamond submounts. The first system to be studied, which was traditionally used in various other applications was Ti(100nm)/Pt(200nm)/Au(500nm)/Au-Sn(2.5 μm). This structure provided a molten Au-Sn layer of eutectic composition (80:20 wt%) on top of the Ti/Pt metals for about 6 sec, while heated at temperatures of 300 to 350°C, and allowed for efficient bonding of the device to the submount. Longer heating durations, however, led to reaction between Pt and Sn to consume significant amounts of Sn from the solder, thus elevating its melting temperature and resolidifying the solder. With optimum bonding conditions, a high quality bond of the InP-based laser diode to the CVD-diamond submount was observed, and a superior electrical performance of the diode was measured compared to diodes that were bonded with the standard In/BeO configurations. In order to maintain the superior performance of the InP laser diode bonded assembly but improve the thermodynamic stability of the metallurgical system and thus extending the bonding processing window, various metals such as W and Cr were studied as a replacement for the Ti/Pt barrier metals in between the CVD-diamond submount and the Au-Sn solder. While applying the W layer, a thin Ti(10nm) layer was introduced in between it and the Au-Sn to improve the solder wettability. The W layer was found to remain intact after heating at 350°C for durations as long as 5 min, and thus, due to the inert nature of the Au-Sn/W interface, the Au-Sn ratio was kept uniform at the eutectic liquid composition through a long heating duration (up to 5 min). Minimum reaction was observed, as well, at the Au-Sn/Cr interface, while executing a Ti(100nm)/Cr(200nm)/Au-Sn(1.5 μm) system, and thus allowed for an excellent bonding of the InP laser diodes to the CVD-diamond submounts.

High-performance mid-infrared GaSb laser diodes for defence and sensing applications

2014 ◽  
Author(s):  
Augustinas Vizbaras ◽  
Edgaras Dvinelis ◽  
Augustinas Trinkunas ◽  
Ieva Šimonyte ◽  
Mindaugas Greibus ◽  
...  
Keyword(s):  
High Performance ◽  
Laser Diodes ◽  
Mid Infrared ◽  
Sensing Applications

scholarly journals Broadband mid-infrared amplified spontaneous emission from Er/Dy co-doped fluoride fiber with a simple diode-pumped configuration

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Kenji Goya ◽  
Akira Mori ◽  
Shigeki Tokita ◽  
Ryo Yasuhara ◽  
Tetsuo Kishi ◽  
...  
Keyword(s):  
Light Source ◽  
Spontaneous Emission ◽  
Gas Sensing ◽  
Amplified Spontaneous Emission ◽  
Ion Concentration ◽  
Light Sources ◽  
Multimode Laser ◽  
Mid Infrared ◽  
Sensing Applications ◽  
Co Doped

AbstractEr3+/Dy3+ co-doped double-clad ZBLAN optical fiber has been used to obtain amplified spontaneous emission (ASE) broadband light sources cladding-pumped by 980-nm multimode laser diode (LD) sources. It has been demonstrated that mid-infrared broadband emission extending from 2515 to 3735 nm was obtained by energy transfer between Er3+ and Dy3+. We experimentally investigated the optimum design of Er3+/Dy3+ co-doped ZBLAN fiber in terms of ion concentration, fiber length, pumping configuration, and pumping power. The ASE output power was more than 2.5 mW when the LD pump power was set at 5 W. To assess its potential for gas sensing applications, the fabricated ASE light source was used to successfully detect methane gas with concentrations at 1% and 5%. The simple and stable construction of our ASE light source is suitable for practical purposes.

scholarly journals Diva - A Small Satellite for Global Astrometry and Photometry

1998 ◽  
Vol 11 (1) ◽  
pp. 583-583
Author(s):  
S. Röser ◽  
U. Bastian ◽  
K.S. de Boer ◽  
E. Høg ◽  
E. Schilbach ◽  
...  
Keyword(s):  
High Precision ◽  
Wavelength Range ◽  
Fizeau Interferometer ◽  
Proper Motions ◽  
Small Satellite ◽  
Short Overview ◽  
Photometric Observations ◽  
Photometric Measurements ◽  
First Time ◽  
Astronomy And Astrophysics

DIVA (Double Interferometer for Visual Astrometry) is a Fizeau interferometer on a small satellite. It will perform astrometric and photometric observations of at least 4 million stars. A launch in 2002 and a minimum mission length of 24 months are aimed at. A detailed description of the experiment can be obtained from the DIVA homepage at http://www.aip.de:8080/᷉dso/diva. An overview is given by Röser et al., 1997. The limiting magnitude of DIVA is about V = 15 for spectral types earlier than M0, but drops to about V = 17.5 for stars later than M5. Table 1 gives a short overview on DIVA’s performance. DIVA will carry out a skysurvey complete to V = 12.5. For the first time this survey will comprise precise photometry in at least 8 bands in the wavelength range from 400 to 1000 nm. DIVA will improve parallaxes by a factor of 3 compared to Hipparcos; proper motions by at least a factor of 2 and, in combination with the Hipparcos observations, by a factor of 10 for Hipparcos stars. At least 30 times asmany stars as Hipparcos will be observed, and doing this DIVA will fill the gap in observations between Hipparcos and GAIA. DIVA’s combined astrometric and photometric measurements of high precision will have important impacts on astronomy and astrophysics in the next decade.

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