scholarly journals Phase Stability in U-6Nb Alloy Doped with Ti from the First Principles Theory

2020 ◽  
Vol 10 (10) ◽  
pp. 3417
Author(s):  
Alexander Landa ◽  
Per Söderlind ◽  
Amanda Wu

First-principles calculations within the density-functional-theory (DFT) approach are conducted in order to explore and explain the effect of small amounts of titanium on phase stability in the U-6Nb alloy. During rapid quenching from high to room temperature, metastable phases α′ (orthorhombic), α″ (monoclinic), and γ0 (tetragonal) can form, depending on Nb concentration. Important mechanical properties depend on the crystal structure and, therefore, an understanding of the effect of impurities on phase stability is essential. Insights on this issue are obtained from quantum-mechanical DFT calculations. The DFT framework does not rely on any material-specific assumptions and is therefore ideal for an unbiased investigation of the U-Nb system.

Author(s):  
A. O. Dashdemirov ◽  
S. G. Asadullayeva ◽  
A. S. Alekperov ◽  
N. A. Ismayilova ◽  
S. H. Jabarov

In this paper, the results of the first principles calculations within the framework of the density functional theory of the electronic spectrum of a GeS crystal are presented. The density of states and interband optical transitions are investigated. It was found that GeS compounds have semiconducting properties with a bandgap of 1.52 eV. The main contribution of the bands in the vicinity of the Fermi level is from the 3[Formula: see text] and 3[Formula: see text] states of the S and Ge atoms, respectively. The highest amplitude, about 2.3 eV ([Formula: see text], is mainly associated with the interband optical transitions between the states [Formula: see text]. The results of the luminescence studies of GeS and GeS:Gd layered crystals at room-temperature are presented. A noticeable increase in the intensity of the luminescence radiation in GeS:Gd has been established. The reason for the increase in the effectiveness of photoluminescence is due to the overlapping of optical transitions of GeS at 695 nm wavelength with the radiation lines of Gd[Formula: see text]ion at that same energy.


RSC Advances ◽  
2019 ◽  
Vol 9 (44) ◽  
pp. 25900-25911 ◽  
Author(s):  
Esmaeil Pakizeh ◽  
Jaafar Jalilian ◽  
Mahnaz Mohammadi

In this study, based on the density functional theory and semi-classical Boltzmann transport theory, we investigated the structural, thermoelectric, optical and phononic properties of the Fe2ZrP compound.


Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 100 ◽  
Author(s):  
Weiwei Wang ◽  
Dahuai Zheng ◽  
Mengyuan Hu ◽  
Shahzad Saeed ◽  
Hongde Liu ◽  
...  

Numerous studies have indicated that intrinsic defects in lithium niobate (LN) dominate its physical properties. In an Nb-rich environment, the structure that consists of a niobium anti-site with four lithium vacancies is considered the most stable structure. Based on the density functional theory (DFT), the specific configuration of the four lithium vacancies of LN were explored. The results indicated the most stable structure consisted of two lithium vacancies as the first neighbors and the other two as the second nearest neighbors of Nb anti-site in pure LN, and a similar stable structure was found in the doped LN. We found that the defects dipole moment has no direct contribution to the crystal polarization. Spontaneous polarization is more likely due to the lattice distortion of the crystal. This was verified in the defects structure of Mg2+, Sc3+, and Zr4+ doped LN. The conclusion provides a new understanding about the relationship between defect clusters and crystal polarization.


2019 ◽  
Vol 33 (31) ◽  
pp. 1950386
Author(s):  
Vladimir Saleev ◽  
Alexandra Shipilova

The first-principles calculations of band gaps and bulk moduli of cesium lead halide perovskite solid solutions, [Formula: see text] and [Formula: see text], are performed at the level of general gradient approximation of the density functional theory. We use supercell approach for computational modeling of disordered systems, which gives a description of the properties of the structure baasing on the average over a set of multiple configurations, namely distributions of different species over a given set of atomic positions. The calculations were performed with the CRYSTAL14 program package. The dependence of the band gap and bulk modulus on the content [Formula: see text] are investigated over the whole range [Formula: see text].


2013 ◽  
Vol 373-375 ◽  
pp. 1965-1969
Author(s):  
Kun Nan Qin ◽  
Ling Zhi Zhao ◽  
Yong Mei Liu ◽  
Fang Fang Li ◽  
Chao Yang Cui

The electronic structure and optical properties of Cu-doped SnS2with Sn-substituted content of 0, 12.5 and 37.5 at.% were successfully calculated by the first principles plane-wave pseudopotentials based on the density functional theory. It is found that the intermediate belts appear near the Fermi level and the energy band gap becomes narrower after the doping of the Cu atoms. The absorption peaks show a remarkable redshift and the absorption region broadens relatively after introducing acceptor impurity level. When Sn atoms of 37.5 at% were substituted by Cu, the optical absorption coefficient is significantly improved in the frequency range below 5.58 eV and over 8.13 eV.


2013 ◽  
Vol 477-478 ◽  
pp. 1303-1306
Author(s):  
Qin Xiang Gao

Using the first-principles calculations within the density functional theory (DFT), we have investigated the structure, magnetism and half-metallic stability of Co2FeGa Heusler compound under pressure from 0 to 50GPa. The results revel that the lattice constant is gradually shrank and total magnetic moment in per unit slightly decreased with increasing pressure, respectively. Moreover, with the increase of the pressure, the Fermi level will move towards high-energy orientation. When the pressure reaches at 30GPa the most stable half-metallicity is observed which the Fermi level is located at the middle of the spin-minority gap.


2010 ◽  
Vol 139-141 ◽  
pp. 22-25 ◽  
Author(s):  
Xin Tan ◽  
Yu Qing Li ◽  
Xue Jie Liu ◽  
De Gong Liu

The structural and elastic properties of HfN and Hf-Si-N have been studied, using first principles calculations based on the density functional theory. These calculations provide the lattice parameter, cohesive energy and elastic constants of fcc (NaCl)-HfN, the N-deficient Hf-Si-N and the Hf-deficient Hf-Si-N solution phase. In order to study the relative stability, binding energy of all configurations has been calculated. The results showed that it was difficult to add a Si atom into the center of the HfN cell because the cohesive energy decreased. However, if an Hf atom or an N atom was missing in the HfN, a silicon atom was possible to occupy the vacant site and form the Hf-Si-N substitutional solid solution. Moreover, the bulk modulus, shear modulus and elastic modulus increased accordingly, the mechanical properties were improved.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mohammad Ali Mohebpour ◽  
Shobair Mohammadi Mozvashi ◽  
Sahar Izadi Vishkayi ◽  
Meysam Bagheri Tagani

AbstractEver since global warming emerged as a serious issue, the development of promising thermoelectric materials has been one of the main hot topics of material science. In this work, we provide an in-depth understanding of the thermoelectric properties of X$$_2$$ 2 YH$$_2$$ 2 monolayers (X=Si, Ge; Y=P, As, Sb, Bi) using the density functional theory combined with the Boltzmann transport equation. The results indicate that the monolayers have very low lattice thermal conductivities in the range of 0.09−0.27 Wm$$^{-1}$$ - 1 K$$^{-1}$$ - 1 at room temperature, which are correlated with the atomic masses of primitive cells. Ge$$_2$$ 2 PH$$_2$$ 2 and Si$$_2$$ 2 SbH$$_2$$ 2 possess the highest mobilities for hole (1894 cm$$^2$$ 2 V$$^{-1}$$ - 1 s$$^{-1}$$ - 1 ) and electron (1629 cm$$^2$$ 2 V$$^{-1}$$ - 1 s$$^{-1}$$ - 1 ), respectively. Si$$_2$$ 2 BiH$$_2$$ 2 shows the largest room-temperature figure of merit, $$ZT=2.85$$ Z T = 2.85 in the n-type doping ( $$\sim 3\times 10^{12}$$ ∼ 3 × 10 12  cm$$^{-2}$$ - 2 ), which is predicted to reach 3.49 at 800 K. Additionally, Si$$_2$$ 2 SbH$$_2$$ 2 and Si$$_2$$ 2 AsH$$_2$$ 2 are found to have considerable ZT values above 2 at room temperature. Our findings suggest that the mentioned monolayers are more efficient than the traditional thermoelectric materials such as Bi$$_2$$ 2 Te$$_3$$ 3 and stimulate experimental efforts for novel syntheses and applications.


2016 ◽  
Vol 30 (14) ◽  
pp. 1650219
Author(s):  
Soraya Jácome ◽  
Arvids Stashans

Study of corundum-type chromium oxide ([Formula: see text]-Cr2O3) crystal doped with the nitrogen and magnesium impurities has been carried out through the use of first-principles calculations based on the density functional theory (DFT) and generalized gradient approximation (GGA). Three cases corresponding different impurity–impurity distances have been considered. Structural, electronic and magnetic properties have been studied for all co-doping cases. The [Formula: see text]-type electrical conductivity was found when distance between the Mg and N atoms is equal to 4.10 Å. The results obtained are consistent with the available experimental data.


2012 ◽  
Vol 26 (20) ◽  
pp. 1250132
Author(s):  
G. Y. YAO ◽  
G. H. FAN ◽  
J. H. MA ◽  
S. W. ZHENG ◽  
J. CHEN ◽  
...  

Using the first-principles method based on the density functional theory, we have calculated electronic structure of zinc blende AlN doped with 6.25% of V. The V dopants are found spin polarized and the calculated band structures suggest a 100% polarization of the conduction carriers. The ferromagnetic ground state in V-doped AlN can be explained in terms of double-exchange mechanism, and a Curie temperature above room temperature can be expected. These results suggest that the V-doped AlN may present a promising dilute magnetic semiconductor and find applications in the field of spintronics.


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