scholarly journals Plasma Oxidation Printing into DLC and Graphite for Surface Functionalization

2019 ◽  
Vol 5 (1) ◽  
pp. 11 ◽  
Author(s):  
Tatsuhiko Aizawa ◽  
Kenji Wasa ◽  
Yoshiro Nogami

A diamond-like carbon (DLC) film, coated on a AISI420-J2 stainless steel substrate and vertically aligned graphite (VAG), was structured by high-density plasma oxidation to work as a DLC-punch for micro-stamping and DLC-nozzle array for micro-dispensing, in addition to acting as a copper-plated thermal spreader, respectively. Thick DLC films were micro-patterned by maskless lithography and directly plasma-etched to remove the unmasked regions. Thick VAG (Ca plates were micro-patterned by screen-printing and selectively etched to activate the surface. Raman spectroscopy as well as electric resistivity measurement proved that there was no degradation of VAG by this surface activation. Wet plating was utilized to prove that copper wettability was improved by this surface treatment.

2005 ◽  
Vol 865 ◽  
Author(s):  
Dennis R. Hollars ◽  
Randy Dorn ◽  
P. D. Paulson ◽  
Jochen Titus ◽  
Robert Zubeck Miasolé

AbstractA reactive sputtering process was developed for the production of Cu(In,Ga)Se2 films on a moving stainless steel substrate, in simulation of the operation of a roll coater. Cu, In and Ga fluxes were provided through magnetron sputtering and were reacted in a flux of Se on the heated substrate. CdS films were deposited either by chemical bath deposition (CBD) or by sputtering. Devices of the type steel/Cr/Mo/CIGS/CdS/ZnO/Ag were completed by sputtering ZnO layers and by screen printing grid lines. We made devices with efficiency values above 9%. A uniformity study was performed on a CIGS film and on small area devices made from it. The target length was 12”. Targets of this size are expected to produce a uniformly thick deposit over a range of 6-8”. The film thickness was 2.54 μm over a range of 6” with a standard deviation ó of 0.04 μm. The film composition was uniform over a range of 16”. The values of Cu/III and Ga/III were 0.84 and 0.31, with ó values of 0.02 and 0.01, respectively. The efficiency of allsputtered devices was uniform over a range of 12”, well beyond the 6” wide range of constant CIGS film thickness. Their efficiency was 6.6% on average with ó=0.6%.


2013 ◽  
Vol 133 (4) ◽  
pp. 126-127 ◽  
Author(s):  
Shota Hosokawa ◽  
Motoaki Hara ◽  
Hiroyuki Oguchi ◽  
Hiroki Kuwano

2020 ◽  
Vol 32 (4) ◽  
pp. 042015
Author(s):  
Alireza Mostajeran ◽  
Reza Shoja-Razavi ◽  
Morteza Hadi ◽  
Mohammad Erfanmanesh ◽  
Hadi Karimi

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