scholarly journals Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

2019 ◽  
Vol 5 (3) ◽  
pp. 53 ◽  
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Breakdown Field ◽  
Main Challenge ◽  
Layer Deposition ◽  
High K ◽  
Deposition Processes ◽  
Seed Layer Free

Graphene (Gr) with its distinctive features is the most studied two-dimensional (2D) material for the new generation of high frequency and optoelectronic devices. In this context, the Atomic Layer Deposition (ALD) of ultra-thin high-k insulators on Gr is essential for the implementation of many electronic devices. However, the lack of out-of-plane bonds in the sp2 lattice of Gr typically hinders the direct ALD growth on its surface. To date, several pre-functionalization and/or seed-layer deposition processes have been explored, to promote the ALD nucleation on Gr. The main challenge of these approaches is achieving ultra-thin insulators with nearly ideal dielectric properties (permittivity, breakdown field), while preserving the structural and electronic properties of Gr. This paper will review recent developments of ALD of high k-dielectrics, in particular Al2O3, on Gr with “in-situ” seed-layer approaches. Furthermore, recent reports on seed-layer-free ALD onto epitaxial Gr on SiC and onto Gr grown by chemical vapor deposition (CVD) on metals will be presented, discussing the role played by Gr interaction with the underlying substrates.

scholarly journals Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

2019 ◽  
Vol 6 (10) ◽  
pp. 1900097 ◽  
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
Ioannis Deretzis ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Layer Deposition ◽  
Highly Uniform ◽  
Seed Layer Free

Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor

2015 ◽  
Vol 15 (1) ◽  
pp. 382-385
Author(s):  
Jun Hee Cho ◽  
Sang-Ick Lee ◽  
Jong Hyun Kim ◽  
Sang Jun Yim ◽  
Hyung Soo Shin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Gate ◽  
Layer Deposition ◽  
High K

scholarly journals Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 5 ◽  
Author(s):  
César Masse de la Huerta ◽  
Viet Nguyen ◽  
Jean-Marc Dedulle ◽  
Daniel Bellet ◽  
Carmen Jiménez ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Atomic Layer Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Dynamics Simulation ◽  
Selective Deposition ◽  
Temporal Separation ◽  
Present Contribution ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition

Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition growth (CVD). Fluid dynamics in SALD mainly depends on the geometry of the reactor and its components. To quantify and understand the parameters that may influence the deposition of films in SALD, the present contribution describes a Computational Fluid Dynamics simulation that was coupled, using Comsol Multiphysics®, with concentration diffusion and temperature-based surface chemical reactions to evaluate how different parameters influence precursor spatial separation. In particular, we have used the simulation of a close-proximity SALD reactor based on an injector manifold head. We show the effect of certain parameters in our system on the efficiency of the gas separation. Our results show that the injector head-substrate distance (also called deposition gap) needs to be carefully adjusted to prevent precursor intermixing and thus CVD growth. We also demonstrate that hindered flow due to a non-efficient evacuation of the flows through the head leads to precursor intermixing. Finally, we show that precursor intermixing can be used to perform area-selective deposition.

scholarly journals A modular reactor design forin situsynchrotron x-ray investigation of atomic layer deposition processes

2015 ◽  
Vol 86 (11) ◽  
pp. 113901 ◽  
Author(s):  
Jeffrey A. Klug ◽  
Matthew S. Weimer ◽  
Jonathan D. Emery ◽  
Angel Yanguas-Gil ◽  
Sönke Seifert ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Reactor Design ◽  
X Ray ◽  
Layer Deposition ◽  
Deposition Processes

scholarly journals Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells

2020 ◽  
Vol 13 (7) ◽  
pp. 1997-2023 ◽  
Author(s):  
James A. Raiford ◽  
Solomon T. Oyakhire ◽  
Stacey F. Bent
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Perovskite Solar Cells ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition

A review on the versatility of atomic layer deposition and chemical vapor deposition for the fabrication of stable and efficient perovskite solar cells.

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