scholarly journals Structural, Morphological, and Optical Properties of Iron Doped WO3 Thin Film Prepared by Pulsed Laser Deposition

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 412 ◽  
Author(s):  
Mariana Osiac ◽  
Nicoleta Cioatera ◽  
Maria Jigau
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Annealing Treatment ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray ◽  
Iron Doped

The iron doped tungsten-oxide (Fe and WO3) thin film with different morphology and crystalline structures were obtained for different substrate temperatures at the oxygen pressure of 14.66 Pa. The Fe-doped WO3 films were deposited by pulsed laser deposition (PLD). The influence of the substrate temperature on the surface and on the crystalline phases of the films was studied. The XRD (X-ray diffraction) analysis indicates the changing in the crystalline phases from γ-monoclinic to a mixture of γ-monoclinic and hexagonal phases dependent on the temperature of annealing and as-grown films. Related to the as-grown and annealing films conditions, the SEM (scanning electron microscopy) shows a change in the image surface from nanoneedles, to nanoporous, and further to long nanowires and broad nanobands. Energy-dispersive X-ray spectroscopy (EDX) shows the elemental composition of the Fe-doped WO3 film as-grown and after annealing treatment. Raman spectroscopy presented the main vibration mode of the Fe-doped WO3 thin film. The optical energy bandgap of the films is decreasing as the substrate temperature increases.

EFFECT OF SUBSTRATE TEMPERATURE ON THE CRYSTALLINITY AND BAND EDGE LUMINESCENCE OF ZnO THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION

2012 ◽  
Vol 26 (30) ◽  
pp. 1250161 ◽  
Author(s):  
D. ZHANG ◽  
C. Z. WANG ◽  
F. X. ZHANG
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Raman Spectra ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Emission ◽  
Band Edge Luminescence ◽  
Substrate Temperatures

Zinc oxide films were deposited on silicon substrates by reactive pulsed laser deposition of zinc target. The effect of substrate temperatures on the crystal and band edge luminescence was studied using X-ray diffraction, scanning electron microscopy and Raman spectra. All the films deposited in the substrate temperatures range from room temperature to 600°C exhibited strong c-axis orientation. The preferred orientation of crystal changed with substrate temperature increase, due to the preferential nucleation at lower temperatures and surface diffusion at higher temperatures. The detailed micro-structural analysis indicated a tensile stress in all the films using X-ray diffraction and Raman spectra. It is interesting that the film deposited at 350°C, which exhibited best crystallinity quality in the X-ray diffraction, rocking curve and the best stoichiometry, less defects in Raman spectra, does not show the most intense UV emission and weakest visible emission. The most intense UV emission was exhibited in the films deposited at 500°C which had the equiaxed grain size.

Single- and Multi-target Pulsed Laser Deposition of Thin BSTO films: Preparation, Microstructure and Electrical Properties

2003 ◽  
Vol 784 ◽  
Author(s):  
Kumaravinothan Sarma ◽  
Peter Kr. Petrov ◽  
Neil McN. Alford
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Capacitor Structure

ABSTRACTA comparative study of microstructure and electrical properties of BaxSr1-xTiO3 films made by single- and multi-target pulsed laser deposition was carried out. The films were epitaxially grown on both LaAlO3 and MgO substrates. The structural properties of all samples were investigated using X-ray diffraction and Raman spectroscopy. The elemental composition of the samples was investigated using energy dispersive X-ray analysis. For electrical properties examination, a simple capacitor structure was patterned on the film surface. Thin films made using both methods exhibit similar structural and electrical properties; however the samples made by a multi-target method underwent phase transition in a broader temperature region. The results prove the possibility of using the multi-target pulse laser deposition as a more flexible method for engineering thin film stoichometry.

Influence of Sr-Doping on the Structure of LaCoO3 Thin Films Prepared by Pulsed Laser Deposition

2015 ◽  
Vol 231 ◽  
pp. 19-24 ◽  
Author(s):  
Agnieszka Kopia ◽  
Łukasz Cieniek ◽  
Kazimierz Kowalski ◽  
Jan Kusiński
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Sem Analysis ◽  
Laser Deposition ◽  
Layer Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure And Morphology

The aim of the research was to investigate the influence of strontium on the structure thin films La1-x SrxCoO3 (x=0; 0.1, 0.2). The LaCoO3 and LaCoO3 doped by Sr films were grown by pulsed laser deposition (PLD) on Si [100] substrate using an Excimer KrF (= 248 nm). To characterize the structure and morphology of the thin films were used the SEM, AFM and XRD methods. X-Ray Diffraction analysis showed only LaCoO3 phase in the thin film not doped andLa0.1Sr0.9CoO3 and La0.2Sr0.8CoO3 phases in thin films doped by Sr. The crystallites size, calculated by Williamson-Hall plots, was smaller for films doped by Sr. The surface of the thin films was free from the drops. SEM analysis showed change of the shape of thin films as a result of doping by Sr. Highly developed layer surface was observed using the AFM microscope for thin films doped by Sr.

Pulsed Laser Deposition of Epitaxial Sr(RuxSn1-x)O3 Thin Film Electrodes and KNbO3/Sr(RuxSnl-x)O3 Bilayers

1995 ◽  
Vol 401 ◽  
Author(s):  
H.-M. Christen ◽  
L. A. Boatner ◽  
L. Q. Englisht ◽  
L. A. Géa ◽  
P. J. Marrero ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Multilayer Structures ◽  
X Ray Diffraction ◽  
Lattice Match ◽  
X Ray ◽  
Resistivity Measurements ◽  
Ion Channeling

AbstractSr(RuxSnl-x)O3 is proposed as a new conducting oxide for use in epitaxial multilayer structures. The Sr(Ru0.48Sn0.52)O3 composition exhibits an excellent lattice match with (100)-oriented KTaO3, and films of this composition grown by pulsed laser deposition on KTaO3, SrTiO3, and LaAIO3 substrates have been analyzed by X-ray diffraction, Rutherford backscattering/ion channeling, and resistivity measurements. Epitaxial KNbO3/Sr(Ru0 48Sn0.52)O3 bilayers have been successfully grown.

scholarly journals Facile Synthesis of Porous-Structured Nickel Oxide Thin Film by Pulsed Laser Deposition

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Siamak Pilban Jahromi ◽  
Nay Ming Huang ◽  
Ahmad Kamalianfar ◽  
Hong Ngee Lim ◽  
Muhamad Rasat Muhamad ◽  
...  
Keyword(s):  
Thin Film ◽  
Nickel Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nickel Foil ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grain Sizes

Porous-structured nickel oxide (PsNiO) was obtained through the oxidization of a nickel thin film. The nickel thin film was deposited using the pulsed laser deposition (PLD) method on a nickel foil as a substrate. The results show uniform PsNiO after the oxidization of the nickel thin film at 750∘C for 1 h. X-ray diffraction (XRD) indicates formation of the NiO crystalline structure. Field emission scanning electron microscopy (FESEM) reveals different morphology on the surface of the nickel foil (sample A) and on the nickel thin film (sample B). Comparison of the FESEM results after oxidization shows that the PsNiO on the nickel thin film was more regular and controllable than the NiO layer on the nickel foil. The FESEM images also show that the thickness of the nickel thin film affected the PsNiO size obtained after oxidization. This resulted from the growth of the porous structure at grain boundaries and from the grain sizes. The electrochemical properties of the PsNiO as an electrode are investigated by cyclic voltammetry (CV). These results show the effect of PsNiO size on the current of anodic peak.

Pulsed Laser Deposition Parameter Optimization for Growth of Alumina (Al2O3) Thin Film on Silicon (100)

2003 ◽  
Vol 788 ◽  
Author(s):  
Xinyu Wang ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Zhigang Xu ◽  
Jagannathan Sankar
Keyword(s):  
Thin Film ◽  
Elastic Modulus ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Phases ◽  
Deposition Parameter

ABSTRACTPulsed laser deposition (PLD) technique was used to grow alumina (Al2O3) thin films on (100) silicon substrate under different deposition conditions. The relationship between Al2O3thin film thickness, hardness, elastic modulus, surface morphology and PLD parameters such as laser energy and substrate temperature was investigated. The Film thickness was found to increase with an increase in laser energy and to decrease with an increase in substrate temperature. The film hardness and elastic modulus increases as substrate temperature increases. We have also shown that films are amorphous at lower substrate temperatures and transform to mixture of amorphous and crystalline phases. The ratio of amorphous to crystalline phases decreases with increase in temperature. The surfaces of Al2O3film grown using PLD was found very smooth with least root square roughness less than 2 nm.

Ferroelectric Bi4Ti3O12–SrBi4Ti4O15 Intergrowth Thin Films Prepared by Pulsed Laser Deposition

2002 ◽  
Vol 748 ◽  
Author(s):  
Akira Shibuya ◽  
Minoru Noda ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Unit Cells

ABSTRACTC axis-oriented Bi4Ti3O12–SrBi4Ti4O15 (B IT-SB Ti) intergrowth epitaxial ferroelectric thin films have been grown by pulsed laser deposition (PLD) method on MgO (001) and SrTiO3 (001) substrates. The epitaxial growth of BIT-SBTi intergrowth thin films were confirmed by X-ray diffraction (XRD) θ-2θ scan, pole figure plots and reciprocal space mappings. The c axis lattice constant of the BIT-SBTi intergrowth thin film is very close to that of made up of regular stacking of one-halves of the unit cells of Bi4Ti3O12 (3.296 nm) and SrBi4Ti4O15 (4.189 nm). The annealed BIT-SBTi thin film on Pt/Ti/SiO2/Si substrate shows intergrowth structure, too, and exhibits superior ferroelectricity that the values of 2Pr and 2Ec are 32.0 μC/cm2 and 190 kV/cm, respectively. The annealed BIT-SBTi film shows that the degradation of switching charge after 1×1010 switching cycles was 16.5%. This ferroelectric enhancement is attributed to strain of pseudo-perovskite layers interacting through Bi2O2 layer. The dielectric constant and dielectric loss of the annealed BIT-SBTi film were 433 and 0.037, respectively.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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