Pulsed Laser Deposition Parameter Optimization for Growth of Alumina (Al2O3) Thin Film on Silicon (100)

2003 ◽  
Vol 788 ◽  
Author(s):  
Xinyu Wang ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Zhigang Xu ◽  
Jagannathan Sankar
Keyword(s):  
Thin Film ◽  
Elastic Modulus ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Phases ◽  
Deposition Parameter

ABSTRACTPulsed laser deposition (PLD) technique was used to grow alumina (Al2O3) thin films on (100) silicon substrate under different deposition conditions. The relationship between Al2O3thin film thickness, hardness, elastic modulus, surface morphology and PLD parameters such as laser energy and substrate temperature was investigated. The Film thickness was found to increase with an increase in laser energy and to decrease with an increase in substrate temperature. The film hardness and elastic modulus increases as substrate temperature increases. We have also shown that films are amorphous at lower substrate temperatures and transform to mixture of amorphous and crystalline phases. The ratio of amorphous to crystalline phases decreases with increase in temperature. The surfaces of Al2O3film grown using PLD was found very smooth with least root square roughness less than 2 nm.

scholarly journals Structural, Morphological, and Optical Properties of Iron Doped WO3 Thin Film Prepared by Pulsed Laser Deposition

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 412 ◽  
Author(s):  
Mariana Osiac ◽  
Nicoleta Cioatera ◽  
Maria Jigau
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Annealing Treatment ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray ◽  
Iron Doped

The iron doped tungsten-oxide (Fe and WO3) thin film with different morphology and crystalline structures were obtained for different substrate temperatures at the oxygen pressure of 14.66 Pa. The Fe-doped WO3 films were deposited by pulsed laser deposition (PLD). The influence of the substrate temperature on the surface and on the crystalline phases of the films was studied. The XRD (X-ray diffraction) analysis indicates the changing in the crystalline phases from γ-monoclinic to a mixture of γ-monoclinic and hexagonal phases dependent on the temperature of annealing and as-grown films. Related to the as-grown and annealing films conditions, the SEM (scanning electron microscopy) shows a change in the image surface from nanoneedles, to nanoporous, and further to long nanowires and broad nanobands. Energy-dispersive X-ray spectroscopy (EDX) shows the elemental composition of the Fe-doped WO3 film as-grown and after annealing treatment. Raman spectroscopy presented the main vibration mode of the Fe-doped WO3 thin film. The optical energy bandgap of the films is decreasing as the substrate temperature increases.

In-Situ Optical Diagnostics During Pulsed-Laser Deposition of Magnetoresistive La-Ca-Mn-O Films on Silicon Substrates

1996 ◽  
Vol 441 ◽  
Author(s):  
P.-J. Kung ◽  
J. E. Cosgrove ◽  
K. Kinsella ◽  
D. G. Hamblen
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Target Surface ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Ft Ir

AbstractDuring pulsed-laser deposition of La0.67Ca0.33MnO3 films on silicon substrates, a system that consists of visible optical-emission spectroscopy (OES) and Fourier transform infrared (FT-IR) spectroscopy is employed to perform in-situ diagnosis of the laser-induced plume and to monitor the substrate temperature and the film thickness. The effects of oxygen pressure, laser fluence, and distance from the target surface on emission spectra were studied. In FT-IR measurements, the slopes of the reflectance versus wavenumber curves were observed to increase with film thickness and hence with time, which provides end-point detection during the film growth. La0.67Ca0.33MnO3 films with (100), (110), and mixed orientations, depending on the substrate temperature, were deposited on yttria-stabilized zirconia (YSZ) buffered Si(100) and Si(111) substrates. In a magnetic field of 5 T, the maximum magnetoresistance (MR) values of 250% at 195 K and 164% at 140 K were observed in the as-deposited (110) and (100) films, respectively.

Laser-Induced Thermoelectric Voltage in La0.5Pr0.5MnO3 Thin Film

2011 ◽  
Vol 287-290 ◽  
pp. 2248-2251
Author(s):  
Qian Qian Hua ◽  
Li Sheng Zhang ◽  
Pei Jie Wang
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Colossal Magnetoresistance ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thermoelectric Voltage ◽  
First Time

The laser-induced thermoelectric voltage was observed for the first time in praseodymium doped LaMnO3 thin film grown on LaAlO3 single crystal vicinal cut substrates by pulsed laser deposition. The experimental data for La0.5Pr0.5MnO3 showed a good liner relation between the voltage and the laser energy. The result suggested that the anisotropic Seebeck effect were responsible for the voltage signals in colossal magnetoresistance manganites thin film.

Nano-Polycrystalline Vanadium Oxide Thin Films Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 8 (5) ◽  
pp. 2604-2608 ◽  
Author(s):  
Y. L. Wang ◽  
M. C. Li ◽  
X. K. Chen ◽  
G. Wu ◽  
J. P. Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Vanadium Oxide ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 °C) and enhancing substrate temperature (600–800 °C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 °C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation have been obtained when deposited at oxygen pressure of 0.8 Pa and substrate temperatures of 600–800 °C. The vanadium oxide thin films deposited at high oxygen pressure (8 Pa) reveal a mix-valence of V5+ and V4+, while the VOx thin films deposited at low oxygen pressure (0.8 Pa) display a valence of V4+. The nano-polycrystalline vanadium oxide thin films prepared by pulsed laser deposition have smooth surface with high qualities of mean crystallite size ranging from 30 to 230 nm and Ra ranging from 1.5 to 22.2 nm. Relative low substrate temperature and oxygen pressure are benifit to aquire nano-polycrystalline VOx thin films with small grain size and low surface roughness.

Influence of kinetic energy and substrate temperature on thin film growth in pulsed laser deposition

2006 ◽  
Vol 200 (12-13) ◽  
pp. 4027-4031 ◽  
Author(s):  
D.M. Zhang ◽  
L. Guan ◽  
Z.H. Li ◽  
G.J. Pan ◽  
H.Z. Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Kinetic Energy ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition
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