scholarly journals Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 568
Author(s):  
Dae-Seop Byeon ◽  
Choonghee Cho ◽  
Dongmin Yoon ◽  
Yongjoon Choi ◽  
Kiseok Lee ◽  
...  

Conventional Si or SiGe epitaxy via chemical vapor deposition is performed at high temperatures with a large amount of hydrogen gas using silane (SiH4) or dichlorosilane (SiCl2H2) precursors. These conventional precursors show low growth rates at low temperatures, particularly below 500 °C although a low thermal budget becomes more important for modern fabrication techniques. High-order silane precursors, such as disilane, trisilane, and tetrasilane, are candidates for low-temperature epitaxy due to the lower strength of the Si-Si bonds compared to that of the Si-H bonds. In addition, the consumption of vast amounts of hydrogen gas is an additional burden of the low-temperature process due to its low throughput. In this study, we explored Si and SiGe epitaxial growth behaviors using several high-order silanes under ultra-high vacuum chemical vapor deposition (UHVCVD) and low-pressure chemical vapor deposition (LPCVD) conditions without a carrier gas. Disilane showed high-quality epi-growth under both pressure conditions, whereas trisilane and tetrasilane showed enhanced growth rates and lower quality.

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  

1988 ◽  
Vol 52 (13) ◽  
pp. 1053-1055 ◽  
Author(s):  
D. Meakin ◽  
M. Stobbs ◽  
J. Stoemenos ◽  
N. A. Economou

2000 ◽  
Vol 39 (Part 2, No. 11A) ◽  
pp. L1078-L1080 ◽  
Author(s):  
Syuhei Yagi ◽  
Katsuya Abe ◽  
Akira Yamada ◽  
Makoto Konagai

Sign in / Sign up

Export Citation Format

Share Document