scholarly journals Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique

Coatings ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 419 ◽  
Author(s):  
Wei-Sheng Liu ◽  
Yu-Lin Chang ◽  
Hui-Yu Chen
Keyword(s):  
Electron Microscopy ◽  
Buffer Layer ◽  
Direct Current ◽  
Glass Substrate ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Sputtering Power ◽  
Amorphous Glass ◽  
Zno Buffer Layer ◽  
Gan Film

We deposited 300-nm-thick GaN films on an amorphous glass substrate at a substrate temperature of 300 °C by using pulsed direct current (DC) sputtering. A ZnO buffer layer was utilized to improve the crystalline quality of the GaN films. Scanning electron microscopy results showed that the GaN thin films were grown along the c-axis and possessed a columnar structure. Atomic force microscopy results revealed that the GaN film deposited at a sputtering power of 75 W had the maximum grain size (24.1 nm). Room-temperature photoluminescence measurement of the GaN films indicated an ultraviolet near-band-edge emission at 365 nm and a Zn impurity energy transition level at 430 nm. In addition, X-ray diffraction conducted on the GaN films revealed a predominant (002) hexagonal wurtzite structure. The GaN film deposited at the sputtering power of 75 W demonstrated a high optical transmittance level of 88.5% in the wavelength range of 400–1100 nm. The material characteristics of the GaN films and ZnO buffer layer were studied using cross-sectional high-resolution transmission electron microscopy. The deposition of GaN films by using pulsed DC magnetron sputtering can result in high material quality and has high potential for realizing GaN-related optoelectronic devices on glass substrates.

The growth of thick GaN film on sapphire substrate by using ZnO buffer layer

1993 ◽  
Vol 128 (1-4) ◽  
pp. 384-390 ◽  
Author(s):  
T. Detchprohm ◽  
H. Amano ◽  
K. Hiramatsu ◽  
I. Akasaki
Keyword(s):  
Buffer Layer ◽  
Sapphire Substrate ◽  
Zno Buffer Layer ◽  
Gan Film

scholarly journals Elongated Wire-Like Zinc Oxide Nanostructures Synthesized from Metallic Zinc

2012 ◽  
Vol 15 (1) ◽  
pp. 19 ◽  
Author(s):  
El-Shazly M. Duraia ◽  
G.W. Beall ◽  
Zulkhair A. Mansurov ◽  
Tatyana A. Shabanova ◽  
Ahmed E. Hannora
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Silicon Substrate ◽  
Gas Flow ◽  
Flow Direction ◽  
Crystal Defects ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Metallic Zinc ◽  
Zinc Oxide Nanostructures

Elongated wire-like Zinc oxide, nanocombs and nanocrystals have been successfully synthesized on the silicon substrate from the metallic zinc as a starting material. The annealing temperature was as low as 450 ºC in argon atmosphere mixed with about 3% oxygen. Structural analysis using the X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) showed that the existence of two phases; nanowires and crystalline form. Moreover some nanoparticles aggregates were noticed to be attached in the bulk to the sides of the ZnO nanocrystals and sometimes these aggregate attached to the Zinc oxide hexagonal crystal and grow to form nanowire at different angles. Scanning electron microscopy (SEM) investigations for the zinc oxide nanostructure on the silicon substrate showed the formation of the nanocrystals in the gas flow direction and at the low energy sites over the silicon substrate. Photoluminescence (PL) measurements, performed at the room temperature, showed the existence of two basic emissions: narrow ultraviolet (UV) emission at 398 nm which attributed to the near band edge emission of the wide band gap and a very wide, more intensive, green emission at 471 nm corresponds to the crystal defects such as vacancies, interstitial sites in ZnO.

Self-Catalysed Vapor-Liquid-Solid Growth Mechanism of ZnO Nanowires Grown on Silicon Substrate Pre-Coated with ZnO Buffer Layer

2020 ◽  
Vol 307 ◽  
pp. 64-69
Author(s):  
Naziha Jamaludin ◽  
Samsudi Sakrani ◽  
Kashif Tufail Chaudhary ◽  
Jalil Ali ◽  
Fairuz Diyana Ismail
Keyword(s):  
Electron Microscopy ◽  
Buffer Layer ◽  
Growth Mechanism ◽  
Silicon Substrate ◽  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Zno Buffer Layer ◽  
Vapor Liquid

The present article reports the growth mechanism of zinc oxide (ZnO) nanowires grown on silicon substrate pre-coated with ZnO buffer layer by thermal evaporation method. ZnO nanowires are grown for different growth time of 0, 30, 90 and 120 mins with controlled supply of Ar and O2 gas at 650 °C. The structural, morphological and crystallinity properties of ZnO nanowires are analyzed by field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) spectroscopy, high resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD). FESEM images infers that, the nanowires growth is driven by self-catalysed vapor-liquid-solid mechanism, where the buffer layer serve as nucleation site. EDX spectra show the uniform composition and purity of ZnO nanowires. A strong (002) peak is detected in XRD spectra which indicates that the preferred growth orientation of the nanowires is toward the c-axis with a hexagonal wurtzite structure. The HRTEM microscopic graphs confirm the growth of nanowire along the preferred [0001] axis. Based on the analysis of grown ZnO nanowires, the probable growth mechanism is schematically presented.

Growth and Characterization of GaN Thin Films on Si(111) Substrates Using SiC Intermediate Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
K. Y. Lim ◽  
K. J. Lee ◽  
C. I. Park ◽  
K.C. Kim ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gan Buffer Layer

AbstractGaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH4 gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH3. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using an AlN or GaN buffer layer. Compared with GaN layers grown using a GaN buffer layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The GaN films were characterized by x-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). Full width at half maximum (FWHM) of double crystal x-ray diffraction (DCXD) rocking curve for GaN (0002) on 3C-SiC/Si(111) was 890 arcsec. PL near band edge emission peak position and FWHM at room temperature are 3.38 eV and 79.35 meV, respectively.

Growth of mirror-like Zn1−xMnxO diluted magnetic semiconductor thin films by r.f. magnetron sputtering method

2004 ◽  
Vol 825 ◽  
Author(s):  
Sejoon Lee ◽  
Hye Sung Lee ◽  
Deuk Young Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Diluted Magnetic Semiconductor ◽  
Substrate Surface ◽  
Magnetic Semiconductor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Semiconductor Thin Films ◽  
Diluted Magnetic

AbstractThe Zn1−xMnxO thin films were grown on Al2O3 (0001) substrates by an r.f. magnetron sputtering method. The film grown with employing buffer layer shows mirror-like surface, while the film grown without buffer layer shows the columnar-structured configuration. The mirror-like Zn0.93Mn0.07O thin films have the single crystalline phase with (000ℓ) orientation normal to the substrate surface and show the UV emission originated from the near band-edge-emission for the measurements of x-ray diffraction and photoluminescence, respectively. The mirror-like Zn0.93Mn0.07O film clearly showed a hysteresis loop, which is obvious evidence of ferromagnetism, and the Curie temperature was determined to be 68 K for the characterization of the temperature-dependent magnetization.

Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy

2020 ◽  
Vol 20 (6) ◽  
pp. 3929-3934 ◽  
Author(s):  
C. Ramesh ◽  
P. Tyagi ◽  
S. Bera ◽  
S. Gautam ◽  
Kiran M. Subhedar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Monolayer Graphene ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Laser Molecular Beam Epitaxy ◽  
Metal Foils ◽  
Direct Growth ◽  
Cu Foil ◽  
Gan Film

We report the direct growth of crystalline GaN on bare copper (Cu) and monolayer-graphene/Cu metal foils using laser molecular beam epitaxy technique at growth temperature of 700 °C. The surface morphology investigated with field emission scanning electron microscopy revealed that the size of GaN grains for film grown on bare Cu falls in range of 90 to 160 nm whereas large grains with size of ˜200 to 600 nm was obtained for GaN grown on graphene/Cu foil under similar growth condition. The transverse optical mode of cubic GaN and E2 (high) phonon mode for wurtzite GaN phases were obtained on the GaN film grown on Cu and graphene/Cu metal foils as deduced by Raman spectroscopy. The photoluminescence (PL) spectroscopy studies showed that the near band edge emission peaks for GaN on Cu and graphene/Cu consist two major peaks at 3.26 and 3.4 eV, corresponding to cubic and wurtzite GaN, respectively. The Raman and PL studies disclosed that the mixed phase growth of GaN occurs on these foils and better structural and optical quality for GaN on graphene/Cu foil. The direct growth of GaN on two dimensional graphene on polycrystalline metal foils is beneficial various transferrable and flexible opto-electronics device applications.

The Effect of Buffer Layers in Mocvd Growth of Gan Film on 3C-SiC/Si Substrate

2000 ◽  
Vol 639 ◽  
Author(s):  
C. I. Park ◽  
J. H. Kang ◽  
K. C. Kim ◽  
K. Y. Lim ◽  
E.-K. Suh ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Buffer Layers ◽  
Band Edge ◽  
Band Edge Emission ◽  
Si Substrate ◽  
Structural And Optical Properties ◽  
Gan Film ◽  
Gan Buffer Layer

ABSTRACTThe growth of GaN films on Si substrates is very attractive work because of irreplaceable merits of Si wafer such as low cost, high surface quality, large area wafer availability, high conductivity and well-established processing techniques.In this work, we studied the effect of buffer layers to grow high quality GaN films on 3C- SiC/Si(111) substrates. GaN films were grown on 3C-SiC/Si(111) by metalorganic chemical vapor deposition (MOCVD) using various buffer layers (GaN, AlN, and superlattice). The surface morphology and structural and optical properties of GaN films were investigated with atomic force microscopy (AFM), x-ray diffraction (XRD), Raman spectroscopy, and Photoluminescence (PL), respectively. GaN films grown using superlattice buffer layer showed only c-oriented (0002) plane of GaN from the XRD analysis. Raman spectra showed that the E2 high mode agreed with the selection rule was well observed in all GaN films. The A1(TO) and E1(TO) mode were appeared for GaN grown without buffer layer, whereas the E1(TO) mode was additionally appeared in the GaN films grown with GaN buffer layer. In the PL spectra at low temperature, the peaks associated with band edge emission and donor-accepter pair (D0A0) were observed in GaN films grown without buffer layer or with GaN buffer layer and AlN buffer layer. GaN films grown with superlattice buffer layer showed band edge and very weak D0A0 emission. The root mean square (RMS) roughness of the GaN film grown on superlattice buffer layer was only 4.21 Å Our experimental results indicated that the buffer layer affects crucially the qualities of GaN films grown on the 3C-SiC/Si substrate. Superlattice buffer layer improved the surface morphology as well as structural and optical properties of GaN films.

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

1992 ◽  
Vol 61 (22) ◽  
pp. 2688-2690 ◽  
Author(s):  
T. Detchprohm ◽  
K. Hiramatsu ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Phase ◽  
High Quality ◽  
Zno Buffer Layer ◽  
Gan Film

scholarly journals Investigation on the Deposition of an AlN-ZnO/ZnO/AlN-ZnO Double Heterojunction Structure Using Radio Frequency Magnetron Cosputtering Technology

Coatings ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 544
Author(s):  
Yu-Kai Zheng ◽  
Yang-Zheng Zhang ◽  
Hsin-Ying Lee ◽  
Ching-Ting Lee ◽  
Ruei-Hao Huang ◽  
...  
Keyword(s):  
Crystalline Structure ◽  
Deep Level ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Ultraviolet Emission ◽  
Heterojunction Structure ◽  
Double Heterojunction ◽  
Zno Buffer Layer

A symmetric AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure was consecutively deposited onto silicon substrate using cosputtering technology and then annealed at 700 °C under vacuum ambient for 30 min. The crystalline quality of the ZnO film in the heterojunction structure was significantly improved as verified by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Improvement on the crystalline structure was ascribed to the stress in the ZnO active film, which was effectively buffered by the underlayered AlN-ZnO layer. Native oxygen vacancies in the ZnO film also were effectively suppressed due to a little diffusion of the Al atoms from the cosputtered AlN-ZnO layer, and led to an increase in the carrier concentration. Such ZnO film deposited onto the homogeneous AlN-ZnO buffer layer emitted an intense near-band-edge emission, and the deep level emission was absent. The ultraviolet emission was further enhanced by covering an AlN-ZnO barrier laye, which was a consequence of the improvement on the carrier confinement. Accordingly, single ultraviolet emission with a quality ZnO crystalline structure, which is very promising for application in short-wavelength optoelectronic devices, was realized from the ZnO film sandwiched by the homogeneity of the cosputtered AlN-ZnO layers.

Effects of Annealing Treatment on Structural, Optical and Morphology Characteristics of ZnO Nanostructures

2012 ◽  
Vol 626 ◽  
pp. 967-970 ◽  
Author(s):  
Siti Khadijah Mohd Bakhori ◽  
Chuo Ann Ling ◽  
Shahrom Mahmud
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Treatment ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Zno Nanostructures ◽  
Zno Nanostructure ◽  
Band Emission ◽  
Transmission Electron ◽  
Xrd Patterns

The ZnO nanostructure produced by CFCO or French process were undergone annealing treatment at 700°C in oxygen and nitrogen ambient. Subsequently, the characteristics of structural, optical and morphology of ZnO nanostructures were investigated using X-ray diffraction (XRD), photoluminescence (PL) and transmission electron microscopy (TEM) respectively. The crystallite size of the nanostructures were calculated from full width half maximum (FWHM) of (101) peak in XRD patterns and the size is around 42 nm. PL measuremment were carried out and the near band edge emission (NBE) is increase in wavelength or namely redshifted. Moreover, deep band emission (DBE) is observed at 520 nm for ZnO annealed in nitrogen, which commonly regarded as the defect level of oxygen vacancies. The investigation continues with conducting transmission electron microscopy (TEM) to demonstrate the mophology of as grown nanostructures and annealed in both nitrogen and oxygen ambient.

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