scholarly journals AgSn[Bi1−xSbx]Se3: Synthesis, Structural Characterization, and Electrical Behavior

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 864
Author(s):  
Paulina Valencia-Gálvez ◽  
Daniela Delgado ◽  
María Luisa López ◽  
Inmaculada Álvarez-Serrano ◽  
Silvana Moris ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Seebeck Coefficient ◽  
X Ray ◽  
Average Value ◽  
Transmission Electron ◽  
Semiconductor Behavior ◽  
Type Semiconductor ◽  
Diffraction Patterns ◽  
Increasing Temperature ◽  
P Type

Herein, we report the synthesis, characterization, and electrical properties of lead-free AgSnm[Bi1−xSbx]Se2+m (m = 1, 2) selenides. Powder X-ray diffraction patterns and Rietveld refinement data revealed that these selenides consisted of phases related to NaCl-type crystal structure. The microstructures and morphologies of the selenides were investigated by backscattered scanning electron microscopy, energy-dispersive X-ray spectroscopy, and high-resolution transmission electron microscopy. The studied AgSnm[Bi1−xSbx]Se2+m systems exhibited typical p-type semiconductor behavior with a carrier concentration of approximately ~+1020 cm−3. The electrical conductivity of AgSnm[Bi1−xSbx]Se2+m decreased from ~3.0 to ~10−3 S·cm−1 at room temperature (RT) with an increase in m from 1 to 2, and the Seebeck coefficient increased almost linearly with increasing temperature. Furthermore, the Seebeck coefficient of AgSn[Bi1−xSbx]Se3 increased from ~+36 to +50 μV·K−1 with increasing Sb content (x) at RT, while its average value determined for AgSn2[Bi1−xSbx]Se4 was approximately ~+4.5 μV·K−1.

Synthesis and Thermoelectric Properties of Ba8Ga16+xSbxGe30-2x (x=0,1) Clathrate Single Crystals

2008 ◽  
Vol 368-372 ◽  
pp. 553-555
Author(s):  
H.F. Wang ◽  
Ke Feng Cai ◽  
H. Li ◽  
L. Wang ◽  
X.L. Li
Keyword(s):  
Electron Microscopy ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Czochralski Method ◽  
X Ray Diffraction ◽  
Flux Method ◽  
X Ray ◽  
Type Semiconductor ◽  
P Type ◽  
Scanning Electron

Ba8Ga16Ge30 clathrate material has being intensely investigated as a candidate of promising thermoelectric materials. In this work, Ba8Ga16+xSbxGe30-2x (x=0,1) single crystals have been synthesized by the Ga flux method, using high purity elemental Ba, Sb, Ga, and Ge as starting materials. Powder X-ray diffraction, Scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy and Raman spectroscopy were used to characterize the single crystals. Seebeck coefficient of the crystals was measured from 300 to 800 K. The result indicates that the crystals are p-type semiconductor, which is different from the crystals synthesized by the Czochralski method. The Seebeck coefficient almost does not change after doping Sb in the whole temperature measured and it is in the range of 200 to 300μV/K.

EFFECT OF Ni ON THE ELECTRICAL AND MICROSTRUCTURAL PROPERTIES OF NANOCRYSTALLITES Fe2O3/TiO2 SYSTEM

2006 ◽  
Vol 13 (04) ◽  
pp. 479-484 ◽  
Author(s):  
MAGED S. SOBHY
Keyword(s):  
Electrical Resistivity ◽  
Spinel Ferrite ◽  
Average Crystalline Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Value ◽  
Semiconductor Behavior ◽  
Ion Substitution ◽  
Diffraction Patterns ◽  
Increasing Temperature

Nominal compositions of Ni x Ti 1-x Fe 2 O 5-δ (x = 0, 0.2, 0.4, 0.6, 0.8 and 1) were prepared by a solid state reaction using stoichiometric amounts of Fe 2 O 3/ TiO 2 system and NiO as a dopant. The effects of small substitution of Ni ions on the electrical and structural properties were studied for the above system. The X-ray diffraction patterns revealed that the ferroelectric phase of iron titanate and the spinel ferrite phase of Ni -ferrite having a single phase at x = 0 and 1, respectively. The substitution of Ni ions increases the average value of lattice constant aav. Solid–solid interaction took place between the ternary oxides at 1200°C for 4 h yielding a new phase of NiTiO 3. The presence of the three phases was confirmed by X-ray diffraction technique. The resultant compositions have nanocrystallites with average crystalline size "D av " in the range 100–300 nm. The DC electrical resistivity ρ, Curie temperature TC and activation energies for electric conduction around TC region increase as Ni ion substitution increases. The ferrite samples have a semiconductor behavior where electrical resistivity ρ decreases on increasing temperature. The activation energy for electrical conduction was affected by both the ratio "ferroelectric/ferrite" and the position of the Curie temperatures in the compositions depending on the ( Ni , Ti ) to Fe ratio.

Ag2O/ZnO Heterostructures with Enhanced Photocatalytic Activity

2021 ◽  
Vol 1035 ◽  
pp. 1043-1049
Author(s):  
Di Xiang ◽  
Chang Long Shao
Keyword(s):  
Electron Microscopy ◽  
Visible Light ◽  
Visible Light Irradiation ◽  
Environmental Remediation ◽  
Organic Dyes ◽  
Light Irradiation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
P Type

A simple route has been developed for the synthesis of Ag2O/ZnO heterostructures and the samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and photoluminescence (PL) spectroscopy analysis. Considering the porous structure of Ag2O/ZnO, the photocatalytic degradation for the organic dyes, such as eosin red (ER), methyl orange (MO), methylene blue (MB) and rhodamine B (RhB), under visible light irradiation was investigated in detail. Noticeably, Ag2O/ZnO just took 40 min to degrade 96 % MB. The rate of degradation using the Ag2O/ZnO heterostructures was 2.3 times faster than that of the bare porous ZnO nanospheres under visible light irradiation due to that the recombination of the photogenerated charge was inhibited greatly in the p-type Ag2O and n-type ZnO semiconductor. So the Ag2O/ZnO heterostuctures showed the potential application on environmental remediation.

Structural, morphological, and magnetic study of nanocrystalline cobalt-copper powders synthesized by the polyol process

1995 ◽  
Vol 10 (6) ◽  
pp. 1546-1554 ◽  
Author(s):  
G.M. Chow ◽  
L.K. Kurihara ◽  
K.M. Kemner ◽  
P.E. Schoen ◽  
W.T. Elam ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Copper Powders ◽  
Face Centered ◽  
Increasing Temperature ◽  
X Ray Absorption

Nanocrystalline CoxCu100−x (4 ⋚ x ⋚ 49 at. %) powders were prepared by the reduction of metal acetates in a polyol. The structure of powders was characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), extended x-ray absorption fine structure (EXAFS) spectroscopy, solid-state nuclear magnetic resonance (NMR) spectroscopy, and vibrating sample magnetometry (VSM). As-synthesized powders were composites consisting of nanoscale crystallites of face-centered cubic (fcc) Cu and metastable face-centered cubic (fcc) Co. Complementary results of XRD, HRTEM, EXAFS, NMR, and VSM confirmed that there was no metastable alloying between Co and Cu. The NMR data also revealed that there was some hexagonal-closed-packed (hcp) Co in the samples. The powders were agglomerated, and consisted of aggregates of nanoscale crystallites of Co and Cu. Upon annealing, the powders with low Co contents showed an increase in both saturation magnetization and coercivity with increasing temperature. The results suggested that during preparation the nucleation of Cu occurred first, and the Cu crystallites served as nuclei for the formation of Co.

Microstructural properties and formation mechanisms of GaN nanorods grown on Al2O3 (0001) substrates

2009 ◽  
Vol 24 (8) ◽  
pp. 2476-2482
Author(s):  
Kyu H. Lee ◽  
Jeong Y. Lee ◽  
Y.H. Kwon ◽  
Tae W. Kang ◽  
Dong H. Kim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Hydride Vapor Phase Epitaxy ◽  
Formation Mechanisms ◽  
Gas Mixing ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Increasing Temperature ◽  
Microscopy Images

X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy images showed that one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurtzite structures were grown on Al2O3 (0001) substrates by hydride vapor-phase epitaxy without a catalyst. The tip morphology of the GaN nanorods became flat with increasing temperature difference between the gas mixing and the substrate zones. The gas mixing temperature significantly affected the formation of the nanorods, and the substrate temperature influenced the morphology and the strain of the GaN nanorods near the GaN/Al2O3 heterointerface. The strain and the stress existing in the GaN layer near the heterointerface were decreased with increasing growth rate. The formation mechanisms of the GaN nanorods grown on the Al2O3 (0001) substrates are described on the basis of the experimental results.

scholarly journals Investigation of the γ′ Precipitates Dissolution in a Ni-Based Superalloy During Stress-Free Short-Term Annealing at High Homologous Temperatures

2021 ◽  
Author(s):  
Łukasz Rakoczy ◽  
Małgorzata Grudzień-Rakoczy ◽  
Fabian Hanning ◽  
Grzegorz Cempura ◽  
Rafał Cygan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
Short Term ◽  
X Ray ◽  
Transmission Electron ◽  
Thermodynamic Simulations ◽  
The Matrix ◽  
Increasing Temperature

AbstractThe equiaxed Ni-based superalloy René 108 was subjected to short-term annealing at five temperatures between 900 °C and 1100 °C. The phase composition, phase lattice parameters, microstructure, stereological parameters, and chemical composition of γ′ precipitates were investigated by thermodynamic simulations, X-ray diffraction, scanning and transmission electron microscopy, and energy-dispersive X-ray spectroscopy. Analysis of the γ and γ′ lattice parameters using the Nelson-Riley extrapolation function showed that the misfit parameter for temperatures 900 °C to 1050 °C is positive (decreasing from 0.32 to 0.11 pct). At 1100 °C, the parameter becomes negative, δ = − 0.18 pct. During the short-term annealing, γ′ precipitates dissolution occurred progressing more rapidly with increasing temperatures. The surface fraction of γ′ precipitates decreased with increasing temperature from 0.52 to 0.34. The dissolution of γ′ precipitates did not only proceed through uninterrupted thinning of each individual precipitate, but also included more complex mechanisms, including splitting. Based on transmission electron microscopy, it was shown that after γ′ precipitates dissolution, the matrix close to the γ/γ′ interface is strongly enriched in Co and Cr and depleted in Al.

A Novel Low-Temperature-Fired Multifunctional Varistor-Magnetic Ferrite Materials

2012 ◽  
Vol 2012 (CICMT) ◽  
pp. 000641-000649
Author(s):  
Li-Then Mei ◽  
Hsing-I Hsiang ◽  
Hui-Wen Ye
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Grain Boundary ◽  
Schottky Barriers ◽  
Energy Dispersion Spectroscopy ◽  
X Ray ◽  
Transmission Electron ◽  
Donor Dopant ◽  
Type Semiconductor ◽  
The Relationship

A novel low temperature-fired (950°C) multifunctional varistor-magnetic ferrite materials can be obtained by adding V2O5 into CuCr0.2Fe1.8O4 ferrites. The relationship between the grain-boundary composition and varistor properties were investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersion spectroscopy (EDS), and X-ray photoelectric spectroscopy (XPS). The addition of V2O5 can effectively reduce the sintering temperature of CuCr0.2Fe1.8O4 ferrites to temperatures of lower than 950°C. Moreover, the V5+ ions occupied the octahedral site of spinel structure and acted as donor dopant, which resulted in the semiconductive grain. The copper-rich observation at the grain boundary based on the TEM and EDS results implied that copper oxide would possibly develop at the grain boundary as the acceptor state, forming double Schottky barriers with the n-type semiconductor grains.

scholarly journals Characterization of Ag-Doped p-Type SnO Thin Films Prepared by DC Magnetron Sputtering

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Hoai Phuong Pham ◽  
Thanh Giang Le Thuy ◽  
Quang Trung Tran ◽  
Hoang Hung Nguyen ◽  
Huynh Tran My Hoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Carrier Scattering ◽  
Semiconductor Behavior ◽  
Type Semiconductor ◽  
Diffraction Patterns ◽  
P Type ◽  
Tin Monoxide

Crystalline structure and optoelectrical properties of silver-doped tin monoxide thin films with different dopant concentrations prepared by DC magnetron sputtering are investigated. The X-ray diffraction patterns reveal that the tetragonal SnO phase exhibits preferred orientations along (101) and (110) planes. Our results indicate that replacing Sn2+ in the SnO lattice with Ag+ ions produces smaller-sized crystallites, which may lead to enhanced carrier scattering at grain boundaries. This causes a deterioration in the carrier mobility, even though the carrier concentration improves by two orders of magnitude due to doping. In addition, the Ag-doped SnO thin films show a p-type semiconductor behavior, with a direct optical gap and decreasing transmittance with increasing Ag dopant concentration.

Preparation and Application of Carboxyl-Functioned Magnetic Nanoparticles for Arylsulfatase Immobilization

2016 ◽  
Vol 13 (10) ◽  
pp. 7408-7415
Author(s):  
Yongxing Li ◽  
Qiong Xiao ◽  
Qin Yin ◽  
Hui Ni ◽  
Yanbing Zhu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Magnetic Nanoparticles ◽  
Vibrating Sample Magnetometry ◽  
X Ray Diffraction ◽  
Sulfate Ester ◽  
Xrd Pattern ◽  
X Ray ◽  
Transmission Electron ◽  
Mean Diameter ◽  
Diffraction Patterns

Arylsulfatase, one of a few enzymes that can enhance the gelling strength of agar by cleaving the sulfate ester bonds in agar, was covalently immobilized with carboxyl functioned magnetic nanoparticles (CMNPs). The resultant CMNPs and immobilized arylsulfatase were characterized by transmission electron microscopy (TEM), Dynamic Light scattering (DLS), X-ray diffraction (XRD), vibrating sample magnetometry (VSM) and thermogravimetric analysis (TGA). The TEM result indicated that the CMNPs and immobilized arylsulfatase had a similar mean particle size of 10 nm. The arylsulfatase-CMNPs had a mean diameter of 1200 nm in aqueous solution determined by the DLS, which was much bigger than the CMNPs (433.6 nm). The different sizes demonstrated that the arylsulfatase was coated on CMNPs successfully. XRD showed that diffraction patterns of the CMNPs and arylsulfatase-CMNPs were close to the standard XRD pattern of Fe3O4. Saturation magnetizations were 52.1 emu/g for carriers and 47.9 emu/g for immobilized arylsulfatase, which indicated that the particles had superparamagnetic characteristics. The TGA revealed that the amount of arylsulfatase bound to the surface of CMNPs was 5.65%. The arylsulfatase exhibited better thermal stability and reusability after immobilization, the immobilized arylsulfatase can retain more than 50% enzyme activity up to the 9th cycle.

Synthesis of Ni-Mo-W Sulfide Nanorods as Catalyst for Hydrodesulfurization of Dibenzothiophene

2008 ◽  
Vol 8 (12) ◽  
pp. 6406-6413 ◽  
Author(s):  
F. Paraguay-Delgado ◽  
R. García-Alamilla ◽  
J. A. Lumbreras ◽  
E. Cizniega ◽  
G. Alonso-Núñez
Keyword(s):  
Electron Microscopy ◽  
Physical Adsorption ◽  
Atomic Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxide Precursor ◽  
Transmission Electron ◽  
Adsorption Of Nitrogen ◽  
Diffraction Patterns ◽  
Scanning Electron

Two trimetallic sulfurs, MoWNiS and MoWSNi, were synthesized to be used as a catalyst in hydrodesulfurization reactions. The mixed oxide mesoporous nanostructured MoO3-WO3 with an Mo:W atomic ratio of 1:1 was used as the precursor. The first catalyst was prepared by impregnating nickel in the oxide precursor and then subsequent sulfiding with an H2S/H2 mix at 400 °C for 2 hours. The second catalyst was prepared by sulfiding the precursor and then impregnating the nickel, and finally reducing the material with a H2/N2 at 350 °C. In both catalysts the Mo:W:Ni atomic ratio was maintained at 1:1:0.5. The materials obtained were characterized by physical adsorption of nitrogen, X-ray diffraction, scanning electron microscopy, transmission electron microscopy. Furthermore, the materials obtained were evaluated by a dibenzothiophene hydrodesulfuration reaction. The diffraction patterns show that both materials are polycrystalline and mainly of MoS2 and WS2 phases.

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