scholarly journals Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 155 ◽  
Author(s):  
Hang Wang ◽  
Ying Wang ◽  
Shuyan Gong ◽  
Xinyuan Zhou ◽  
Zaixing Yang ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Ternary Phase ◽  
Ternary Phase Diagram ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Visible Absorption ◽  
Residual Oxygen ◽  
Cmos Compatible

Currently, it is challenging to develop new catalysts for semiconductor nanowires (NWs) growth in a complementary-metal-oxide-semiconductor (CMOS) compatible manner via a vapor-liquid-solid (VLS) mechanism. In this study, chemically synthesized Cu2O nano cubes are adopted as the catalyst for single crystalline β-Ga2O3 NWs growth in chemical vapor deposition. The growth temperature is optimized to be 750 to 800 °C. The NW diameter is controlled by tuning the sizes of Cu2O cubes in the 20 to 100 nm range with a bandgap of ~4.85 eV as measured by ultraviolet-visible absorption spectroscopy. More importantly, the catalyst tip is found to be Cu5As2, which is distinguished from those Au-catalyzed Au-Ga alloys. After a comprehensive phase diagram investigation, the β-Ga2O3 NWs are proposed to be grown by the ternary phase of Cu-As-Ga diffusing Ga into the growth frontier of the NW, where Ga react with residual oxygen to form the NWs. Afterward, Ga diminishes after growth since Ga would be the smallest component in the ternary alloy. All these results show the importance of the catalyst choice for CMOS compatible NW growth and also the potency of the ternary phase catalyst growth mode in other semiconductor NWs synthesis.

Open Circuit Voltage and Single Walled Carbon Nanotube (wt%) Dependency in Solid-State Complementary Metal Oxide Semiconductor-Compatible Glucose Fuel Cells

2020 ◽  
Vol 12 (1) ◽  
pp. 101-106
Author(s):  
Md. Zahidul Islam ◽  
Shigeki Arata ◽  
Kenya Hayashi ◽  
Atsuki Kobayashi ◽  
Kiichi Niitsu
Keyword(s):  
Carbon Nanotube ◽  
Fuel Cell ◽  
Open Circuit Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Open Circuit ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Cmos Compatible

Solid-state complementary metal oxide semiconductor (CMOS)-compatible glucose fuel cells, with single-walled carbon nanotube (SWCNT) films and different amounts of carbon nanotube (wt%) were investigated. Those with a SWCNT content of 3 wt% were found to develop the highest open circuit voltage (OCV) of 400 mV, together with a high electrical conductivity, a power density of 0.53 μW/cm2 and current density of 1.31 μA/cm2. Measurements were performed by dipping the anode into a 30 mM glucose solution. The OCV and power density increased together with the fuel cell concentration. The developed fuel cell uses materials that are biocompatible with the human body (single-walled carbon nanotube-glucose). As a result, it was possible to attain an OCV of 400 mV with a single-walled carbon nanotube content of 3 wt% while improvements in the performance of the CMOS-compatible glucose fuel cell were obtained, and the parameters affecting the performance of the fuel cell were identified. This bio-fuel cell was fabricated using CMOS semiconductor processes on a silicon wafer. These findings are significant to realizing mobile or implantable devices that can be used for biomedical applications.

Electrical Properties of Ultrathin Al2O3 Films Grown by Metalorganic Chemical Vapor Deposition for Advanced Complementary Metal-oxide Semiconductor Gate Dielectric Applications

2005 ◽  
Vol 20 (6) ◽  
pp. 1536-1543 ◽  
Author(s):  
Spyridon Skordas ◽  
Filippos Papadatos ◽  
Steven Consiglio ◽  
Eric T. Eisenbraun ◽  
Alain E. Kaloyeros ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Silicon Oxynitride ◽  
Oxide Semiconductor ◽  
Organic Chemical

The electrical properties of ultrathin amorphous Al2O3 films, grown by low temperature metal-organic chemical vapor deposition from aluminum(III) 2,4-pentanedionate and water as co-reactants, were examined for potential applications as gate dielectrics in emerging complementary metal-oxide semiconductor technologies. High-frequency capacitance–voltage and current–voltage techniques were used to evaluate Al2O3 films deposited on silicon oxynitride on n-type silicon (100) substrates, with thickness ranging from 2.5 to 6.5 nm, as a function of postdeposition annealing regimes. Dielectric constant values ranging from 11.0 to11.5 were obtained, depending on the annealing method used. Metal-insulator-semiconductor devices were demonstrated with net equivalent oxide thickness values of 1.3 nm. Significant charge traps were detected in the as-deposited films and were mostly passivated by the subsequent annealing treatment. The main charge injection mechanism in the dielectric layer was found to follow a Poole–Frenkel behavior, with post-annealed films exhibiting leakage current an order of magnitude lower than that of equivalent silicon oxide films.

A Complementary Metal Oxide Semiconductor (CMOS) Compatible Capacitive Silicon Accelerometer with Polysilicon Rib-Style Flexures

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 7093-7099 ◽  
Author(s):  
Seokyu Kim ◽  
Youngjoo Yee ◽  
Hyeoncheol Kim ◽  
Kukjin Chun ◽  
Ikpyo Hong ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Compatible

scholarly journals TiO2 metasurfaces: From visible planar photonics to photochemistry

2019 ◽  
Vol 5 (11) ◽  
pp. eaax0939 ◽  
Author(s):  
Yunkai Wu ◽  
Wenhong Yang ◽  
Yubin Fan ◽  
Qinghai Song ◽  
Shumin Xiao
Keyword(s):  
Absorption Band ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
The Other ◽  
Oxide Semiconductor ◽  
Light Extinction ◽  
Light Extinction Coefficient ◽  
The Past ◽  
Cmos Compatible ◽  
20 Nm

TiO2 metasurfaces have been intensively studied in the past few years. To date, the TiO2 metadevices only used their high reflective index (n). The controllable light extinction coefficient (k) of TiO2 has not been exploited yet. Here, we converted TiO2 metasurfaces to black TiO2 metasurfaces and explored their new opportunities in photochemistry. A complementary metal oxide semiconductor (CMOS)–compatible technique has been developed to reversibly and precisely control the absorption of TiO2 metasurfaces without spoiling their internal nanostructures. Consequently, two types of black TiO2 metasurfaces were realized for photochemical experiments. The metasurface with an ultrawide absorption band can substantially enhance the white light absorption and accelerate the solar-based photochemistry process by a factor of 18.7. The other metasurface with an absorption band of <20 nm only responded to the resonant wavelengths, making the photochemistry process capable of being monitored in real time. In addition, the reversible switch between normal and black states makes TiO2 metasurfaces suitable for dynamic metadevices as well.

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