scholarly journals Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 653 ◽  
Author(s):  
Botao Liu ◽  
Yue Yu ◽  
Xia Tang ◽  
Bing Gao
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Flow Field ◽  
Industrial Production ◽  
Solution Growth ◽  
Interface Instability ◽  
Growth Interface ◽  
Interface Stability ◽  
Large Size ◽  
Top Seeded Solution Growth

The growth interface instability of large-size SiC growth in top-seeded solution growth (TSSG) is a bottleneck for industrial production. The authors have previously simulated the growth of 4-inch SiC crystals and found that the interface instability in TSSG was greatly affected by the flow field. According to our simulation of the flow field, we proposed a new stepped structure that greatly improved the interface stability of large-size crystal growth. This stepped structure provides a good reference for the growth of large-sized SiC crystals by TSSG in the future.

Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents

2014 ◽  
Vol 778-780 ◽  
pp. 79-82 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Nobuhiro Okada ◽  
Koji Moriguchi ◽  
Hiroshi Kaido ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Single Crystal Growth ◽  
Solution Growth ◽  
Process Conditions ◽  
Process Stability ◽  
Growth Interface ◽  
Formation Technique ◽  
Top Seeded Solution Growth

We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. Si-Cr and Si-Ti melts were used as solvents. Meniscus formation technique was applied to the present study. Special attention was paid to improve the process stability during long-term growth. One of major technological problems in the solution growth is that the precipitation of polycrystalline SiC which hiders the stable single crystal growth. Another problem is the fluctuation of supersaturation at the growth interface during the growth. Through the optimization of growth process conditions, we have successfully grown 4H-SiC single crystals up to 14 mm long with three-inch-diameter, and evaluated their crystalline quality.

Crystal growth, structure and optical properties of a new acentric crystal La2Al4.68B8O22 with a short UV absorption edge

2016 ◽  
Vol 40 (6) ◽  
pp. 4870-4873 ◽  
Author(s):  
Shu Guo ◽  
Lijuan Liu ◽  
Mingjun Xia ◽  
Xiaoyang Wang ◽  
Lei Bai ◽  
...  
Keyword(s):  
Optical Properties ◽  
Crystal Growth ◽  
Absorption Edge ◽  
Uv Absorption ◽  
Solution Growth ◽  
Growth Structure ◽  
Growth Method ◽  
193 Nm ◽  
Top Seeded Solution Growth

A new acentric borate La2Al4.68B8O22 crystal, grown using the top seeded solution growth method, shows a short absorption edge at 193 nm.

scholarly journals Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 651
Author(s):  
Minh-Tan Ha ◽  
Le Van Lich ◽  
Yun-Ji Shin ◽  
Si-Young Bae ◽  
Myung-Hyun Lee ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Growth Rate ◽  
Fluid Flow ◽  
Crystal Growth ◽  
Static Magnetic Field ◽  
Crystal Surface ◽  
Solution Growth ◽  
Helmholtz Coils ◽  
External Static Magnetic Field ◽  
Top Seeded Solution Growth

Silicon carbide (SiC) is an ideal material for high-power and high-performance electronic applications. Top-seeded solution growth (TSSG) is considered as a potential method for bulk growth of high-quality SiC single crystals from the liquid phase source material. The crystal growth performance, such as growth rate and uniformity, is driven by the fluid flow and constitutional flux in the solution. In this study, we numerically investigate the contribution of the external static magnetic field generated by Helmholtz coils to the fluid flow in the silicon melt. Depending on the setup of the Helmholtz coils, four static magnetic field distributions are available, namely, uniform vertical upward/downward and vertical/horizontal cusp. Based on the calculated carbon flux coming to the crystal surface, the vertical downward magnetic field proved its ability to enhance the growth rate as well as the uniformity of the grown crystal.

Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

2013 ◽  
Vol 740-742 ◽  
pp. 311-314 ◽  
Author(s):  
Kazuaki Seki ◽  
S. Harada ◽  
Toru Ujihara
Keyword(s):  
Crystal Growth ◽  
Growth Rates ◽  
Solution Growth ◽  
High Quality ◽  
Preferential Growth ◽  
Bulk Crystal Growth ◽  
Seed Crystals ◽  
Growth Method ◽  
The Difference ◽  
Top Seeded Solution Growth

In this paper, we review our researches on the high-quality 3C-SiC bulk crystal growth. The polytype control and the suppression of defects are essential in the growth 3C-SiC on hexagonal SiC seed crystals. The growth polytype of SiC is usually controlled by the inheritance of the seed crystal. In contrast, we established kinetic polytype control in which the preferential growth of 3C-SiC can be achieved by the difference in the growth rates depending on supersaturation for the polytypes. In the growth of 3C-SiC, double positioning boundaries (DPBs) are often formed by the existence of twinned domain. The elimination of DPBs can be achieved utilizing the anisotropy of the step advance velocity.

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