scholarly journals Sheet Resistance Measurements of Conductive Thin Films: A Comparison of Techniques

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 960
Author(s):  
Mira Naftaly ◽  
Satyajit Das ◽  
John Gallop ◽  
Kewen Pan ◽  
Feras Alkhalil ◽  
...  

Conductive thin films are an essential component of many electronic devices. Measuring their conductivity accurately is necessary for quality control and process monitoring. We compare conductivity measurements on films for flexible electronics using three different techniques: four-point probe, microwave resonator and terahertz time-domain spectroscopy. Multiple samples were examined, facilitating the comparison of the three techniques. Sheet resistance values at DC, microwave and terahertz frequencies were obtained and were found to be in close agreement.

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.


2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.


2006 ◽  
Vol 6 (7) ◽  
pp. 1939-1944 ◽  
Author(s):  
X. Yu ◽  
R. Rajamani ◽  
K. A. Stelson ◽  
T. Cui

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


2019 ◽  
Vol 30 (14) ◽  
pp. 12876-12887 ◽  
Author(s):  
Shah Fahad ◽  
Haojie Yu ◽  
Li Wang ◽  
Ahsan Nazir ◽  
Raja Summe Ullah ◽  
...  

Nanoscale ◽  
2017 ◽  
Vol 9 (37) ◽  
pp. 13938-13946 ◽  
Author(s):  
C. Polop ◽  
E. Vasco ◽  
A. P. Perrino ◽  
R. Garcia

From aircraft to electronic devices, and even in Formula One cars, stress is the main cause of degraded material performance and mechanical failure in applications incorporating thin films and coatings.


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