scholarly journals Electrochromic Properties of the Vanadium Pentoxide Doped with Nickel as an Ionic Storage Layer

Energies ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 2065
Author(s):  
Tien-Chai Lin ◽  
Bai-Jhong Jheng ◽  
Wen-Chang Huang

The electrochromic property of nickel doped vanadium pentoxide (V2O5) deposited by a co-sputtering system is investigated. The structural analysis of the thin film was done by an X-ray diffraction (XRD) analyzer. The surface morphology of the film was studied by a field emission scanning electron microscopy (FE-SEM). The composition of the film was detected by an Auger analysis. The electrochromic properties of the device were measured by cyclic voltammetry. For the undoped V2O5 thin film, the charge storage capacity increases with the thickness and is 42.58 mC/cm2 at the thickness of 192.4 nm after 2 h deposition. For the Ni-doped V2O5, the Ni-V-O film shows V2O5 structural dominate with cathode coloration in the lower Ni deposition power region and the charge storage capacity decreases with the increases of the power, while the Ni-V-O film transfers to NiO structural dominate with anodic coloration at the realm of higher Ni doping. The charge storage capacity increases with the increase of Ni doping. It can reach to 101.35 mC/cm2. The Ni-V-O electrochromic film shows improvement of transmittance difference between colored and bleached values and improvement of charge store capacity as it is compared to pure V2O5 films.

2014 ◽  
Vol 781 ◽  
pp. 95-106 ◽  
Author(s):  
V. Madhavi ◽  
P. Kondaiah ◽  
S. Uthanna

Thin films of Mo (1.3 at.%) doped WO3 films were deposited on glass and ITO coated glass substrates held at substrate temperatures in the range 473 673 K by RF magnetron sputtering technique. The effect of substrate temperature on the structural and morphological, and electrochromic properties of the deposited films were investigated by X-ray diffraction, scanning electron microscope, Raman spectroscope and with electrochemical cell. X-ray diffraction profiles showed that the films formed at substrate temperature of 473 K consisted of weak (020) reflection related to the orthorhombic phase of WO3 in the amorphous matrix. The films formed at substrate temperatures 473 K were of polycrystalline in nature. The crystallite size of the films increased from 12 to 43 nm with increase of substrate temperature from 473 to 673 K. The scanning electron microscope images of the films formed at 473 K showed the leaf like structure with grain size of 1.2 μm. When substrate temperature increased to 573 K the size of the grains enhanced to 2.4 μm. Raman spectra of the films confirmed the presence of characteristic vibration modes of W = O, W - O - W and O - W - O. The optical band gap of the films increased with increase of substrate temperature. The electrochromic property, that is the color efficiency increased from 42.5 to 50.5 cm2/C with the increase of substrate temperature from 473 to 673 K respectively. The structural and electrochromic properties of the Mo doped WO3 films will be correlated with the substrate temperature maintained during growth of the films.


2009 ◽  
Vol 610-613 ◽  
pp. 610-615 ◽  
Author(s):  
H.G. Yang ◽  
C. Wang ◽  
Yi Cui ◽  
Kai Gui Zhu ◽  
X.G. Diao ◽  
...  

An all-thin-film glass/ITO/MoO3/LiAlO2/NiOx/ITO device was deposited by magnetron sputtering for electrochromic application. The amorphous MoO3 and LiAlO2 thin films were prepared with the substrate temperature below 0 °C and in O2 and Ar gas pressure. The structure and surface morphology of the films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). It has been found that the amorphous LiAlO2 thin film was a suitable ion conductor for the electrochromic device. The transmittance in the wavelength range of 400-800 nm for the ITO/MoO3/LiAlO2/NiOx/ITO device changed from 14.48 % to 57.68 % by the applied voltage of 7 V. The blue-colored electrochromic property could be observed for the all-thin-film device. The experimental results indicated that such a monolithic system had great potential to be applied in flat-panel displays and smart windows.


2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.


2021 ◽  
Vol 411 ◽  
pp. 128416
Author(s):  
S.T. Senthilkumar ◽  
Jeong-Sun Park ◽  
Rebeca Marcilla ◽  
Jesus Palma ◽  
Youngsik Kim

2021 ◽  
Vol 594 ◽  
pp. 73-79
Author(s):  
Xianfeng Wu ◽  
Kai Wang ◽  
Junyu Lin ◽  
Dan Yan ◽  
Zhiyong Guo ◽  
...  

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Lars Banko ◽  
Phillip M. Maffettone ◽  
Dennis Naujoks ◽  
Daniel Olds ◽  
Alfred Ludwig

AbstractWe apply variational autoencoders (VAE) to X-ray diffraction (XRD) data analysis on both simulated and experimental thin-film data. We show that crystal structure representations learned by a VAE reveal latent information, such as the structural similarity of textured diffraction patterns. While other artificial intelligence (AI) agents are effective at classifying XRD data into known phases, a similarly conditioned VAE is uniquely effective at knowing what it doesn’t know: it can rapidly identify data outside the distribution it was trained on, such as novel phases and mixtures. These capabilities demonstrate that a VAE is a valuable AI agent for aiding materials discovery and understanding XRD measurements both ‘on-the-fly’ and during post hoc analysis.


1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.


1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang

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