scholarly journals Zno Micro/Nanostructures Grown on Sapphire Substrates Using Low-Temperature Vapor-Trapped Thermal Chemical Vapor Deposition: Structural and Optical Properties

Materials ◽  
2017 ◽  
Vol 11 (1) ◽  
pp. 3 ◽  
Author(s):  
Po-Sheng Hu ◽  
Cheng-En Wu ◽  
Guan-Lin Chen
2015 ◽  
Vol 1109 ◽  
pp. 456-460
Author(s):  
Najwa Ezira Ahmed Azhar ◽  
Shafinaz Sobihana Shariffudin ◽  
Aimi Bazilah Rosli ◽  
A.K.S. Shafura ◽  
Mohamad Rusop

ZnO nanotetrapod with different oxygen flow rate was prepared by thermal chemical vapor deposition. We have successfully deposited ZnO nanotetrapod on synthesis Zn powder using double furnace with argon (Ar) and oxygen (O2) gas as source material. In this study, we report the effect of different gas flow rate (5 sccm to 15 sccm) on structural and optical properties of the ZnO nanotetrapod. The morphology of ZnO nanotetrapods were analyzed by field emission scanning electron microscope (FE-SEM). It exhibits the length of the nanotetrapods arm decrease with increased of flow rate and diameter of nanotetrapod in range 30 nm to 90 nm. The optical properties were determined through XRD and photoluminescence with 2θ (30o to 80o) and wavelength 350 nm to 620 nm respectively. PL spectra show that the UV emission centred at 380 nm while yellow-orange emission centred at 540 nm.


2016 ◽  
Vol 31 (13) ◽  
pp. 1947-1956 ◽  
Author(s):  
M.J. Salifairus ◽  
S.B. Abd Hamid ◽  
T. Soga ◽  
Salman A.H. Alrokayan ◽  
Haseeb A. Khan ◽  
...  

Abstract


1995 ◽  
Vol 379 ◽  
Author(s):  
P. Boucaud ◽  
C. Guedj ◽  
F. H. Julien ◽  
D. Bouchier ◽  
J. Boulmer ◽  
...  

ABSTRACTWe have investigated structural and optical properties of SiGeC layers. Bulk and multiquantum wells heterostructures were grown by rapid thermal chemical vapor deposition. The photoluminescence of these structures exhibits two distinct features : deep level photoluminescence associated with localized states and bandedge photoluminescence which gives an indication of the band gap variation due to carbon incorporation in substitutional sites. In the case of multiquantum wells heterostructures, a strong segregation is reported as the growth temperature is decreased. An alternate technique to incorporate carbon in SiGe layers, the pulsed laser induced epitaxy with an excimer laser, is presented. The incorporation of carbon in substitutional sites is evidenced by Raman spectroscopy. As the laser flux is increased, new Raman lines associated to carbon-induced disorder are observed in the spectra.


2006 ◽  
Vol 45 (6A) ◽  
pp. 5329-5331 ◽  
Author(s):  
Katsunori Aoki ◽  
Tetsurou Yamamoto ◽  
Hiroshi Furuta ◽  
Takashi Ikuno ◽  
Shinichi Honda ◽  
...  

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