scholarly journals LTCC and Bulk Zn4B6O13–Zn2SiO4 Composites for Submillimeter Wave Applications

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1014
Author(s):  
Dorota Szwagierczak ◽  
Beata Synkiewicz-Musialska ◽  
Jan Kulawik ◽  
Norbert Pałka
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dissipation Factor ◽  
Submillimeter Wave ◽  
Sintering Behavior ◽  
High Frequencies ◽  
Low Dielectric ◽  
Low Dissipation ◽  
Temperature Dependences ◽  
Very High Frequencies

New zinc metaborate Zn4B6O13–willemite Zn2SiO4 composites were investigated as promising materials for LTCC (low temperature cofired ceramics) substrates of microelectronic circuits for submillimeter wave applications. Composites were prepared as bulk ceramics and LTCC multilayer structures with cofired conductive thick films. The phase composition, crystal structure, microstructure, sintering behavior, and dielectric properties were studied as a function of willemite content (0, 10, 13, 15, 20, 40, 50, 60, 100 wt %). The dielectric properties characterization performed by THz time domain spectroscopy proved the applicability of the composites at very high frequencies. For the 87% Zn4B6O13–13% Zn2SiO4 composite, the best characteristics were obtained, which are suitable for LTCC submillimeter wave applications. These were a low sintering temperature of 930 °C, compatibility with Ag-based conductors, a low dielectric constant (5.8 at 0.15–1.1 THz), a low dissipation factor (0.006 at 1 THz), and weak frequency and temperature dependences of dielectric constant.

Sintering behavior and dielectric properties of pyrochlore Pb2FeWO6.5

1994 ◽  
Vol 9 (2) ◽  
pp. 266-269 ◽  
Author(s):  
Chung-Hsin Lu ◽  
Nobuyasu Mizutani
Keyword(s):  
Dielectric Properties ◽  
Grain Growth ◽  
Hot Isostatic Pressing ◽  
Applied Pressure ◽  
Decomposition Temperature ◽  
Dielectric Constants ◽  
Sintering Behavior ◽  
Low Dielectric ◽  
Low Dissipation ◽  
Pyrochlore Type

Pyrochlore-type Pb2FeWO6.5 is difficult to be sintered without applied pressure at temperatures lower than its decomposition temperature. Through hot pressing or hot isostatic pressing processes, densification of specimens is greatly enhanced; moreover, grain growth during sintering is effectively suppressed. Densified Pb2FeWO6.5 exhibits paraelectric characteristic from −135°to −2 °C with low dielectric constants and low dissipation factors. The dielectric constants show rather weak dependence of temperature and frequency.

Structural and Electrical Properties of Ca2+ Substituted Pb[(Zr0.52Ti0.48)0,98(Cr3+0.5, Ta5+0.5)0,02]0,96 P0,04 O3 Ceramics

2014 ◽  
Vol 87 ◽  
pp. 18-23
Author(s):  
Louanes Hamzioui ◽  
Fares Kahoul ◽  
Ahmed Boutarfaia
Keyword(s):  
Dielectric Properties ◽  
Electrical Properties ◽  
Perovskite Phase ◽  
Pyrochlore Phase ◽  
Rhombohedral Phase ◽  
Dissipation Factor ◽  
Sintering Behavior ◽  
Practical Applications ◽  
Low Dissipation ◽  
High Dielectric

Pb1-xCax[(Zr0.52Ti0.48)0,98(Cr3+0.5, Ta5+0.5)0,02]0,96P0,04O3(x = 0,00, 0.02, 0.04, 0.06) ceramics were prepared using the conventional mixed-oxide route. The resultant samples were sintered at different temperatures and subsequently characterized in terms of both microstructure and dielectric properties to study the effects of sintering behavior. X-ray diffraction analysis reveals that all specimens are a pure perovskite phase without pyrochlore phase and exhibits a phase transition from a rhombohedral phase to the coexistence of rhombohedral and tetragonal phases with an increase of sintering temperature. The grain size first increases up tox= 0.02 and then decreases. Comparing with the undoped ceramics, the dielectric properties of the Ca-doped PZT–PCTP specimens are significantly improved. The results show that the ceramics sintered at 1180°C have optimum electrical properties for x= 0.02: a high dielectric constant (εr= 16800) at Tc, a low dissipation factor (tanδ = 0.009) and a low resistivity (ρ= 0.09 ×10+4) (Ω.cm) at 1 kHz, which indicates that the PZT–CCTP ceramics are promising for lead practical applications.

scholarly journals Sintering, Microstructure, and Dielectric Properties of Copper Borates for High Frequency LTCC Applications

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4017
Author(s):  
Dorota Szwagierczak ◽  
Beata Synkiewicz-Musialska ◽  
Jan Kulawik ◽  
Norbert Pałka
Keyword(s):  
Dielectric Properties ◽  
Dielectric Permittivity ◽  
High Frequency ◽  
Ceramic Materials ◽  
Sintering Behavior ◽  
Terahertz Time Domain Spectroscopy ◽  
Very High Frequency ◽  
X Ray ◽  
Low Dielectric ◽  
Very High

New ceramic materials based on two copper borates, CuB2O4 and Cu3B2O6, were prepared via solid state synthesis and sintering, and characterized as promising candidates for low dielectric permittivity substrates for very high frequency circuits. The sintering behavior, composition, microstructure, and dielectric properties of the ceramics were investigated using a heating microscope, X-ray diffractometry, scanning electron microscopy, energy dispersive spectroscopy, and terahertz time domain spectroscopy. The studies revealed a low dielectric permittivity of 5.1–6.7 and low dielectric loss in the frequency range 0.14–0.7 THz. The copper borate-based materials, owing to a low sintering temperature of 900–960 °C, are suitable for LTCC (low temperature cofired ceramics) applications.

Novel soluble polyimides containing pyridine and fluorinated units: preparation, characterization, and optical and dielectric properties

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21662-21671 ◽  
Author(s):  
Weibing Dong ◽  
Yue Guan ◽  
Dejing Shang
Keyword(s):  
Dielectric Constant ◽  
Thermal Properties ◽  
Dielectric Properties ◽  
Low Dielectric Constant ◽  
Mechanical And Thermal Properties ◽  
Polyimide Films ◽  
Low Dielectric

To acquire low dielectric constant polyimide films with good mechanical and thermal properties and low CTE applied in microelectronic fields, three novel polyimides containing pyridine and –C(CF3)2– groups were firstly designed and synthesized.

Preparation and Properties of Porous Si3N4/SiO2/BN Composite Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 828-831 ◽  
Author(s):  
Wei Dong ◽  
Chang An Wang ◽  
Lei Yu ◽  
Shi Xi Ouyang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
High Strength ◽  
Low Dielectric Constant ◽  
Pressureless Sintering ◽  
Composite Ceramics ◽  
Porous Si ◽  
Low Dielectric ◽  
Dry Pressing ◽  
Porous Si3n4

Porous Si3N4/SiO2/BN composite ceramics with high strength and low dielectric constant were prepared by dry-pressing process and pressureless sintering at 1750°C for 1.5 h in flow nitrogen. The influences of BN content on microstructure, porosity, mechanical and dielectric properties of the porous Si3N4/SiO2/BN composite ceramics were discussed. The results showed that the porous Si3N4/SiO2/BN composite ceramics with porosity ranging from 29% to 48% were fabricated by adjusting the content of BN. The flexural strength of the porous Si3N4/SiO2/BN composite ceramics was 78215 MPa. The dielectric constant of the porous Si3N4/SiO2/BN composite ceramics was 3.9~5 at 1 MHz.

Photosensitive Polyimide having low loss tangent for RF application

2018 ◽  
Vol 2018 (1) ◽  
pp. 000476-000482 ◽  
Author(s):  
Masao Tomikawa ◽  
Hitoshi Araki ◽  
Yohei Kiuchi ◽  
Akira Shimada
Keyword(s):  
Molecular Structure ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
High Frequency ◽  
Low Dielectric Constant ◽  
Low Loss ◽  
Elongation At Break ◽  
Low Dielectric ◽  
The Poor

Abstract Progress of 5G telecommunication and mm radar for autopilot, high frequency operation is required. Insulator materials having low loss at high frequency is desired for the applications. We designed the low dielectric constant, and low dielectric loss materials examined molecular structure of the polyimide and found that permittivity 2.6 at 20GHz, dielectric loss 0.002. Furthermore, in consideration of mechanical properties such as the toughness and adhesion to copper from a point of practical use. Dielectric properties largely turned worse when giving photosensitivity. To overcome the poor dielectric properties, we designed the photosensitive system. After all, we successfully obtained 3.5 of dielectric constant and 0.004 of dielectric loss, and 100% of elongation at break. In addition, we offered a B stage sheet as well as varnish. These materials are applicable to re-distribution layer of FO-WLP, Interposer and other RF applications for microelectronics.

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