scholarly journals Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3328
Author(s):  
Atish Bhattacharjee ◽  
Tae-Woo Kim
Keyword(s):  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Superior Performance ◽  
Constant Voltage ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
Type Silicon ◽  
High Annealing ◽  
Post Deposition

In this study, an investigation was performed on the properties of atomic-layer-deposited aluminum oxide (Al2O3) on an n-type silicon (n-Si) substrate based on the effect of post-deposition heat treatment, which was speckled according to ambient temperature and treatment applied time. Based on these dealings, a series of distinctions for extracted capacitance and dielectric constant, hysteresis was performed on annealed and nonannealed samples. The interface and border trap responses, including stress behavior after an application of constant voltage for a specific time and surface morphology by X-ray diffraction (XRD) technique, were also analyzed between the two above-mentioned sample types. Based on observation, the annealed samples showed superior performance in every aspect compared with the nonannealed ones. Some unusual behaviors after high annealing temperature were found, and the explanation is the ion diffusion from oxide layer towards the semiconductor. Since a constant voltage stress was not widely used on the metal–oxide–semiconductor capacitor (MOSCAP), this analysis was determined to reveal a new dimension of post-deposition annealing condition for the Al/Al2O3/n-Si gate stack.

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition

2005 ◽  
Vol 44 (4B) ◽  
pp. 2230-2234 ◽  
Author(s):  
Hag-Ju Cho ◽  
Hye Lan Lee ◽  
Hong Bae Park ◽  
Taek Soo Jeon ◽  
Seong Geon Park ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Layer Deposition ◽  
Post Deposition

Effects of Post-Deposition Annealing Time on Metal-Organic Decomposed Lanthanum Cerium Oxide Film Spin-Coated on Si Substrate

2014 ◽  
Vol 1024 ◽  
pp. 364-367 ◽  
Author(s):  
Way Foong Lim ◽  
Zainovia Lockman ◽  
Kuan Yew Cheong
Keyword(s):  
Cerium Oxide ◽  
Dwell Time ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Si Substrate ◽  
Post Deposition Annealing ◽  
Fixed Temperature ◽  
Post Deposition

Metal-oxide-semiconductor characteristics of MOD-derived lanthanum cerium oxide (LaxCeyOz) film deposited on n-type Si substrate have been studied. Post-deposition annealing of the oxide was performed in argon atmosphere for a dwell time, ranging from 15 to 120 min at a fixed temperature of 400°C. Results demonstrated presence of positively charged oxygen vacancies in all of the oxides post-deposition annealed for different dwell time. Acquisition of the lowest effective oxide charge as well as the lowest interface trap density and total interface trap density in oxide annealed for 120 min has led to the attainment of the highest breakdown voltage, surpassing other oxides.

Thin Film Deposition and Transport in 2223 Bi‐Sr‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
J.T. Kucera ◽  
D.G. Steel ◽  
D.W. Face ◽  
J.M. Graybeal ◽  
T.P. Orlando ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Annealing Conditions ◽  
Sensitive Function ◽  
Post Deposition

AbstractWe have reproducibly prepared thin films of Bi‐Sr‐Ca‐Cu‐O with Tc ≥ 105K. Depositions were done at ambient temperature with a subsequent post‐deposition anneal, and did not include lead substitution. X‐ray diffraction data indicates a majority fraction of the 2223 phase. These films possess very large grains of the order of 20‐30 u.m in size. Post‐deposition annealing conditions are a sensitive function of composition. Detailed transport measurements as a function of temperature and magnetic field have been obtained.

Effect of Post-Deposition Annealing on some Optical Properties of Thermally-Evaporated V2O5 Thin Film

2012 ◽  
Vol 329 ◽  
pp. 139-145
Author(s):  
S.A. Aly
Keyword(s):  
Optical Properties ◽  
Amorphous State ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Spectral Behaviour ◽  
Before And After ◽  
Different Temperatures ◽  
Reflectance Measurements ◽  
Post Deposition

A Vanadium Pentoxide Sample with a Film Thickness of 75 Nm Has Been Thermally Evaporated on Unheated Glass Substrate Using V2O5High Purity Powder. the Sample Was Subjected to a Subsequent Post-Deposition Annealing in Air at Different Temperatures for a Period of One Hour. the Optical Properties Were Studied by Transmittance and Reflectance Measurements. the Integrated Visible ,TVis, and Solar, TSol, Transmittance Were Calculated. the Spectral Behaviour of the Refractive Index as Well as the Absorption Coefficient before and after Post-Deposition Heat-Treatment Was Also Reported. X-Ray Diffraction Confirmed that the Film in the as-Deposited as Well as after Annealing up to 400 °C Is in the Amorphous State.

Effects of post-deposition annealing on sputtered SiO 2 /4H-SiC metal-oxide-semiconductor

2018 ◽  
Vol 139 ◽  
pp. 115-120 ◽  
Author(s):  
Suhyeong Lee ◽  
Young Seok Kim ◽  
Hong Jeon Kang ◽  
Hyunwoo Kim ◽  
Min-Woo Ha ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Post Deposition Annealing ◽  
Post Deposition
Sign in / Sign up

Export Citation Format

Share Document