scholarly journals Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4048
Author(s):  
Sushma Mishra ◽  
Ewa Przezdziecka ◽  
Wojciech Wozniak ◽  
Abinash Adhikari ◽  
Rafal Jakiela ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Crystallite Size ◽  
Secondary Ion Mass Spectrometry ◽  
Debye Length ◽  
High Sensitivity ◽  
Average Crystallite Size ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Zno Films ◽  
Carrier Distribution

The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (Tg) of 100–300 °C were investigated. The electrical properties of the films showed a dependence on the substrate (a-Al2O3 or Si (100)) and a high sensitivity to Tg, related to the deviation of the film stoichiometry as demonstrated by the RT-Hall effect. The average crystallite size increased from 20–30 nm for as grown samples to 80–100 nm after rapid thermal annealing, which affects carrier scattering. The ZnO layers deposited on silicon showed lower strain and dislocation density than on sapphire at the same Tg. The calculated half crystallite size (D/2) was higher than the Debye length (LD) for all as grown and annealed ZnO films, except for annealed ZnO/Si films grown within the ALD window (100–200 °C), indicating different homogeneity of charge carrier distribution for annealed ZnO/Si and ZnO/a-Al2O3 layers. For as grown films the hydrogen impurity concentration detected via secondary ion mass spectrometry (SIMS) was 1021 cm−3 and was decreased by two orders of magnitude after annealing, accompanied by a decrease in Urbach energy in the ZnO/a-Al2O3 layers.

Oxygen bombardment effects on average crystallite size of sputter-deposited ZnO films

2008 ◽  
Vol 354 (17) ◽  
pp. 1926-1931 ◽  
Author(s):  
Mamoru Furuta ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
Chaoyang Li ◽  
Hiroshi Furuta ◽  
...  
Keyword(s):  
Crystallite Size ◽  
Average Crystallite Size ◽  
Zno Films ◽  
Sputter Deposited

scholarly journals Optical and electrical properties of H2 plasma-treated ZnO films prepared by atomic layer deposition using supercycles

2018 ◽  
Vol 84 ◽  
pp. 91-100 ◽  
Author(s):  
Prakash Uprety ◽  
Bart Macco ◽  
Maxwell M. Junda ◽  
Corey R. Grice ◽  
Wilhelmus M.M. Kessels ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Layer Deposition

Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films

2010 ◽  
Vol 21 (3) ◽  
pp. 448-455 ◽  
Author(s):  
Do-Joong Lee ◽  
Hyun-Mi Kim ◽  
Jang-Yeon Kwon ◽  
Hyoji Choi ◽  
Soo-Hyun Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Zno Films ◽  
Structural And Electrical Properties ◽  
Doped Zno

Effect Co- and Sc- Doping on the Functional Properties of Nanocrystalline Powders and Thin Films of ZnO

2010 ◽  
Vol 1256 ◽  
Author(s):  
Marco A Galvez ◽  
Oscar Perales-Perez ◽  
Surinder P Singh
Keyword(s):  
Thin Films ◽  
Crystallite Size ◽  
Sol Gel ◽  
Visible Region ◽  
Average Crystallite Size ◽  
Oxide Phase ◽  
Nanocrystalline Powders ◽  
Zno Films ◽  
Exciton Peak ◽  
Doped Zno

AbstractA modified sol-gel approach to synthesize well-crystallized pure and doped ZnO nanocrystalline powders and thin films has been developed. The attachment of ZnO films onto quartz substrates was optimized by selecting suitable organic agents to control the viscosity of precursor solutions. Thermo-gravimetric analyses on pure and doped precursor solids suggested the need for annealing temperatures above 400 °C to assure the effective crystallization of the oxide phase. The average crystallite size in powders and thin films varied from 25.9 nm to 33.7 nm when pure ZnO films were annealed for 1 hour in the 450 °C - 600 °C range. The average crystallite size ranged between 30 nm and 33 nm in the presence of cobalt (5 at%) and decreased from 33.7 nm to 21.1 nm when scandium ions was used in the 0.0 at% - 10 at% range under similar annealing conditions. UV-vis measurements showed a sharp exciton peak centered at 370 nm whereas photoluminescence analyses detected the characteristic ZnO emission band in the UV region. No photoluminescence band in the visible region, usually attributed to defect states in ZnO, was observed in our measurements. Magnetization measurements revealed a weak ferromagnetism in Co-doped ZnO whereas a clear diamagnetism was evident in the Sc-doped sample.

Influence of growth conditions on the physical properties of Mn doped ZnO thin films grown by reactive magnetron sputtering

2015 ◽  
Vol 1805 ◽  
Author(s):  
Adrian Camacho-Berrios ◽  
Victor Pantojas ◽  
Wilfredo Otaño
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Crystallite Size ◽  
Rf Sputtering ◽  
Growth Conditions ◽  
Zno Thin Films ◽  
Zno Films ◽  
Doped Zno ◽  
Mn Doped

ABSTRACTZnO thin films were deposited using the DC pulsed magnetron sputtering technique to study how composition and structure influences their magnetic properties. Low sputtering powers and high substrate temperatures were used to increase adatom mobility during deposition, resulting in increased crystallite size and reduced residual stress in the films. Another set of ZnO films were Mn-doped using a second magnetron gun and the amount of doping was changed by controlling the RF sputtering power. For these films, the crystallite size increased with the amount of Mn. The magnetic properties of these materials were counterintuitive; not intentionally doped ZnO showed the highest magnetization and magnetization decreased with increasing Mn concentration.

Comment on “Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films”

2017 ◽  
Vol 28 (15) ◽  
pp. 1702875 ◽  
Author(s):  
Debabrata Saha ◽  
Pankaj Misra ◽  
Mukesh Joshi ◽  
Lalit Mohan Kukreja
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Zno Films ◽  
Structural And Electrical Properties ◽  
Doped Zno

Post-annealing Induced Formation of ZnO Nanowires on the ZnO Films in the N2O Ambient

2007 ◽  
Vol 1017 ◽  
Author(s):  
Ping-Yuan Lin ◽  
Wei-Tsai Liao ◽  
Kuo-Yi Yan ◽  
Chia-Chi Chang ◽  
Hsin-Yuen Lin ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Growth Conditions ◽  
Zno Nanowires ◽  
Buffer Layers ◽  
Zno Films ◽  
Near Band Edge ◽  
Pl Spectra ◽  
Post Annealing ◽  
Layer Deposition ◽  
Defect Luminescence

AbstractZnO films were grown on (0001) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DeZn) and nitrous oxide (N2O) in an inductively heated reactor operated at atmospheric pressure. Low-temperature (LT) ZnO buffer layers having various thicknesses were deposited at 400¢J followed by subsequent growth of ZnO films at 600¢J. Some of the ZnO films were then post-annealed at 1000¢J in the N2O flow. Under certain growth conditions, ZnO nanowires were formed on the post-annealed ZnO samples. Room temperature (RT) photoluminescence (PL) spectra of the ZnO nanowires show strong ultraviolet (UV) near band edge emissions at 3.27 eV with a typical full width at half-maximum ( FWHM ) of ~130 meV and quenched defect luminescence at 2.8 eV. 10 K PL spectra of the post-annealed ZnO all exhibit sharp excitonic emissions with the dominant emission being located at 3.36 eV having a FWHM of 4.6 meV.

Growth and Characterization of GaAs Epitaxial Layers by MOCVD

1996 ◽  
Vol 421 ◽  
Author(s):  
Mantu Kumar Hudait ◽  
Prasanta Modak ◽  
S.B. Krupanidhi
Keyword(s):  
Electrical Properties ◽  
High Purity ◽  
Growth Process ◽  
Free Exciton ◽  
Depth Profiling ◽  
Growth Conditions ◽  
Optical And Electrical Properties ◽  
Carrier Distribution ◽  
Homogeneous Background

Abstracttechnique, on both semi-insulating and semi-conducting CraAs substrates with (100) orientation, offset by 2° towards (110) direction. Systematic variation of As/Ga was performed to gain an understanding of growth process, type of formation and other related physical properties. The films were characterized by using the variety of techniques, such as SEM, EDAX, HRTEM, XRD, and PL. Optical and electrical properties of undoped CyaAs epilayers are presented with reference to the growth conditions and AsH3/TMGa ratio. Photoluminescence measurements of GaAs epilayers were recorded at 4.2K and shows the emission of free exciton and confirmed their high purity. The dominant residual impurities in GaAs are presented by using PL. Finally, electrochemical depth profiling exhibited almost homogeneous background carrier distribution and excellent abruptness between the thin GaAs epilayer and substrate.

Sign in / Sign up

Export Citation Format

Share Document