Effect Co- and Sc- Doping on the Functional Properties of Nanocrystalline Powders and Thin Films of ZnO

2010 ◽  
Vol 1256 ◽  
Author(s):  
Marco A Galvez ◽  
Oscar Perales-Perez ◽  
Surinder P Singh

AbstractA modified sol-gel approach to synthesize well-crystallized pure and doped ZnO nanocrystalline powders and thin films has been developed. The attachment of ZnO films onto quartz substrates was optimized by selecting suitable organic agents to control the viscosity of precursor solutions. Thermo-gravimetric analyses on pure and doped precursor solids suggested the need for annealing temperatures above 400 °C to assure the effective crystallization of the oxide phase. The average crystallite size in powders and thin films varied from 25.9 nm to 33.7 nm when pure ZnO films were annealed for 1 hour in the 450 °C - 600 °C range. The average crystallite size ranged between 30 nm and 33 nm in the presence of cobalt (5 at%) and decreased from 33.7 nm to 21.1 nm when scandium ions was used in the 0.0 at% - 10 at% range under similar annealing conditions. UV-vis measurements showed a sharp exciton peak centered at 370 nm whereas photoluminescence analyses detected the characteristic ZnO emission band in the UV region. No photoluminescence band in the visible region, usually attributed to defect states in ZnO, was observed in our measurements. Magnetization measurements revealed a weak ferromagnetism in Co-doped ZnO whereas a clear diamagnetism was evident in the Sc-doped sample.

2021 ◽  
Vol 24 (3) ◽  
pp. 38-42
Author(s):  
Marwa Mudfer Alqaisi ◽  
◽  
Alla J. Ghazai ◽  

In this work, pure Zinc oxide and tin doped Zinc oxide thin films nanoparticles with various volume concentrations of 2, 4, 6, and 8V/V% were prepared by using the sol-gel method. The optical properties were investigated by using UV-Visible spectroscope, and the value exhibits the direct allowed transition. The average of transmittance was around ~(17-23) %in visible region. The optical energy band gap was calculated with wavelength (300-900) nm for pure ZnO and Sn doped ZnO thin films which decreases with increasing concentration from 3.4 eV to 3.1 eV respectively and red shift. The real dielectric(εr) and the imaginary dielectric εiare the same behavior of the refractive index(n) the extinction coefficient (k) respectively. The optical limiting properties were studied by using an SDL laser with a wavelength of 235 nm. ZnO and doping thin films an found efficient as optic limiting and depend on the concentration of the all samples.


2010 ◽  
Vol 152-153 ◽  
pp. 868-873 ◽  
Author(s):  
Xiu Ling Lv ◽  
Yu Bo Dou ◽  
Juan Wang ◽  
Ying Xu

Al doped ZnO thin films(AZO films) was prepared by sol-gel method. The influence of Parameters of different processes on the crystallization properties, micro-morphology and optical properties of this kind of films were studied, using by X-ray diffractometer, filed emission stereoscan, spectral photometer, hall admeasuring apparatus. The results indicated that the crystallization properties, micro-morphology and optical properties of Al doped ZnO films were best on the condition that the sol density was 0.5mol/L, hat treatment temperature is 600 and there is a 8-layer coating.


2014 ◽  
Vol 685 ◽  
pp. 3-6
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye

Pure ZnO thin films and Ag doped ZnO thin films were prepared on quartz substrates by sol-gel process. Structural features and UV absorption spectrum have been studied by XRD and UV-Vis-Nir scanning spectrophotometer. Taking phenol as pollutants, further study of the effect of different annealing temperature and Ag dopant amount of ZnO films on photocatalytic properties was carried out. The results showed that, the optimal annealing temperature on photocatalytic degradation of phenol in this experiment was 300 °C, the best molar ratio of ZnO and Ag was 30:1, which was better than pure ZnO film greatly. Excellent adhesion, recyclable and efficient degradation Ag doped ZnO thin films were found in this experiment.


2012 ◽  
Vol 1454 ◽  
pp. 239-244 ◽  
Author(s):  
Arun Aravind ◽  
M.K. Jayaraj ◽  
Mukesh Kumar ◽  
Ramesh Chandra

ABSTRACTZnO doped with transition metal (TM) thin films were grown by pulsed laser deposition. XRD pattern reveals that all the ZnTMO films have c-axis orientation normal to the substrate. The reciprocal space mapping shows that the crystallinity of ZnTMO film deteriorates at higher doping of TM. All the TM doped ZnO films have transmittance greater than 75% in the visible region. The band gap of the ZnTMO thin films shows red shift on doping with Ni and Cu where as blue shift is observed for Co and Mn which increases with TM concentration. The copper doped ZnO thin film shows green PL emission at 542 nm along with the band edge emission at 385 nm. But other TM doping shows only band edge emission (385nm) and its intensity decreases at higher doping percentage. The presence of non-polar E2high and E2lowRaman modes in thin films indicates that ‘TM’ doping do not alter the wurtzite structure of ZnO. The magnetic studies of the TM doped ZnO shows room temperature ferromagnetism


2013 ◽  
Vol 802 ◽  
pp. 124-128 ◽  
Author(s):  
Krisana Chongsri ◽  
Siriwattana Aunpang ◽  
Wicharn Techitdheera ◽  
Wisanu Pecharapa

In this work, we report the preparation of Cu-doped ZnOthin films by sol-gel method based on zinc acetate dihydrate (CH3COO)2Zn·2H2O, Copper acetate dihydrate Cu3(CH3COO)2·H2O) and diethanolamine (HN(CH2OH)2, DEA). The precursor solution was prepared at various Cu composition ranging from 2-20 wt%. All films were spin-coated on borosilicate substrates for several coating repetition followed by annealing process at 550 °C for 4 h in an ambient air. The structural properties of the films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The XRD results indicate the domination of hexagonal wurtzite structure of ZnO with noticeable alternation in the XRD peak intensity upon Cu doping content. SEM results revealed the grain size shape and surface morphologies of as-prepared samples. Crucial optical properties of as-prepared films were scrutinized from their UV-Vis transmission spectra. The films are highly transparent in the visible region with more than 90 % transparency within 380 nm to 800 nm. Their corresponding band gaps indicate significant red shift with increasing Cu doping content. Overall results suggest that Cu additive play a vital role on relevant optical properties of ZnO that can be adjusted to meet the requirement for practical optoelectronics applications.


2014 ◽  
Vol 32 (4) ◽  
pp. 688-695 ◽  
Author(s):  
Munirah Munirah ◽  
Ziaul Khan ◽  
Mohd. Khan ◽  
Anver Aziz

AbstractThis paper describes the growth of Cd doped ZnO thin films on a glass substrate via sol-gel spin coating technique. The effect of Cd doping on ZnO thin films was investigated using X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence spectroscopy, I–V characteristics and field emission scanning electron microscopy (FESEM). X-ray diffraction patterns showed that the films have preferred orientation along (002) plane with hexagonal wurtzite structure. The average crystallite sizes decreased from 24 nm to 9 nm, upon increasing of Cd doping. The films transmittance was found to be very high (92 to 95 %) in the visible region of solar spectrum. The optical band gap of ZnO and Cd doped ZnO thin films was calculated using the transmittance spectra and was found to be in the range of 3.30 to 2.77 eV. On increasing Cd concentration in ZnO binary system, the absorption edge of the films showed the red shifting. Photoluminescence spectra of the films showed the characteristic band edge emission centred over 377 to 448 nm. Electrical characterization revealed that the films had semiconducting and light sensitive behaviour.


2012 ◽  
Vol 1454 ◽  
pp. 39-44
Author(s):  
Gina Montes Albino ◽  
Marco Gálvez-Saldaña ◽  
Oscar Perales-Pérez

ABSTRACTThe present study addressed the effect of the incorporation of Praseodymium species in the BiFeO3(BFO) structure on the corresponding structural and functional properties of powders and films. The level of the doping species varied from 0 at% to 4 at%. BFO powders and thin films were synthesized by a sol-gel method, where glycol was aggregated to the main solvent to increase the viscosity of the precursor solutions and promote their adhesion onto platinum substrates. The development of the host BFO structure was confirmed by XRD analyses of samples annealed at 700°C for one hour (powders) or 500°C for 2 hours (thin films), in air. The average crystallite size varied from 37 nm to 41 nm and 28nm to 40nm for powders and thin films, respectively, due to the increase of the doping level. The incorporation of specific dopant species played an important role in the ferromagnetic and ferroelectric behavior in the material.


2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
A. B. Kashyout ◽  
H. M. A. Soliman ◽  
H. Shokry Hassan ◽  
A. M. Abousehly

ZnO and Sb-doped ZnO nanoparticles were successfully prepared using sol-gel technique. Different concentrations of triethanolamine (TEA) were utilized as the preparation procedure to act as complexing agent that enhances the doping probability of the formed Sb-doped ZnO nanopowder. Thick films of the prepared nanopowders were fabricated with spinner coating. Morphological characteristics, phase structure, chemical composition, thermal stability, and optical properties of the prepared nanopowders were measured and analyzed. The average crystallite size of ZnO and ZnO:Sb powders ranged between 19–28 nm according to the XRD calculations and TEM observations. The gas sensitivity of the homemade devices based on Sb-doped ZnO nanoparticles towardsO2andCO2gases as a function of temperature was measured and compared with undoped ZnO films. The gas sensitivity of the films was greatly improved after doping with Sb and reached its maximum value of ~86% forO2gas at 93:7 wt% of Zn:Sb.


2017 ◽  
Vol 05 (01) ◽  
pp. 1750004
Author(s):  
R. Vettumperumal ◽  
S. Kalyanaraman ◽  
R. Thangavel

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.


2014 ◽  
Vol 21 (04) ◽  
pp. 1450046 ◽  
Author(s):  
HEMALATA BHADANE ◽  
EDMUND SAMUEL ◽  
DINESH KUMAR GAUTAM

The effect of annealing temperature on sol–gel deposited ZnO thin films have been studied. The average crystallite size determined from XRD shows that the deposited films are nanocrystalline. FTIR confirms deposition of ZnO thin films. The transmittance of annealed ZnO thin films is greater than 80% in visible region with bandgap ranging from 3.25–3.19 eV. The films annealed at 450°C temperature shows lower resistivity value of 527.241 Ωm. The deposited nanocrystalline films are suitable for biosensing applications due to its higher surface area.


Sign in / Sign up

Export Citation Format

Share Document