Influence of growth conditions on the physical properties of Mn doped ZnO thin films grown by reactive magnetron sputtering

2015 ◽  
Vol 1805 ◽  
Author(s):  
Adrian Camacho-Berrios ◽  
Victor Pantojas ◽  
Wilfredo Otaño
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Crystallite Size ◽  
Rf Sputtering ◽  
Growth Conditions ◽  
Zno Thin Films ◽  
Zno Films ◽  
Doped Zno ◽  
Mn Doped

ABSTRACTZnO thin films were deposited using the DC pulsed magnetron sputtering technique to study how composition and structure influences their magnetic properties. Low sputtering powers and high substrate temperatures were used to increase adatom mobility during deposition, resulting in increased crystallite size and reduced residual stress in the films. Another set of ZnO films were Mn-doped using a second magnetron gun and the amount of doping was changed by controlling the RF sputtering power. For these films, the crystallite size increased with the amount of Mn. The magnetic properties of these materials were counterintuitive; not intentionally doped ZnO showed the highest magnetization and magnetization decreased with increasing Mn concentration.

Optical and magnetic properties of Mn doped ZnO thin films grown by SILAR method

2012 ◽  
Vol 24 (6) ◽  
pp. 1782-1787 ◽  
Author(s):  
S. Balamurali ◽  
R. Chandramohan ◽  
N. Suriyamurthy ◽  
P. Parameswaran ◽  
M. Karunakaran ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Zno Thin Films ◽  
Silar Method ◽  
Optical And Magnetic Properties ◽  
Doped Zno ◽  
Mn Doped

Role of Dipping Cycle on Mn Doped ZnO Thin Films Prepared by Successive Ionic Layer Adsorption and Reaction Method

2019 ◽  
Vol 17 (12) ◽  
pp. 987-990
Author(s):  
K. Rathi Devi ◽  
G. Selvan ◽  
M. Karunakaran ◽  
G. Rajesh Kanna ◽  
K. Kasirajan
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Structural Parameters ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
Zno Films ◽  
Line Profile Analysis ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped

In this work, Mn doped Zinc Oxide (ZnO) thin films were coated onto glass substrates by low cost SILAR technique by altering dipping cycle such as 40, 60, 80 and 100. The film thickness was estimated using weight gain method and it revealed that the film thickness increased with dipping cycle. The structural, morphological, elemental and FTIR properties of the coated Mn doped ZnO films were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), EDAX and FTIR spectrophotometer respectively. The prepared films were found to be hexagonal structure with polycrystalline in nature with preferential orientation along (002) plane. X-ray line profile analysis was used to evaluate the micro structural parameters. The crystallite size values are increased with increase of dipping cycle. Morphological results showed that the dipping cycle has a marked effect on morphology of the prepared Mn doped ZnO thin films. EDAX studies showed that the presence of Zinc, Oxygen and Mn content.

Effect of defect complex on magnetic properties of (Fe, Mn)-doped ZnO thin films

Rare Metals ◽  
2012 ◽  
Vol 31 (2) ◽  
pp. 154-157 ◽  
Author(s):  
Hailing Yang ◽  
Xiaoguang Xu ◽  
Guoqing Zhang ◽  
Jun Miao ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Defect Complex ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

Preparation of N Doped ZnO Films by Magnetron Sputtering

2011 ◽  
Vol 197-198 ◽  
pp. 348-351
Author(s):  
Shan Shan Luo ◽  
Wen Kui Li ◽  
Ze Hua Zhou
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Flow Rate ◽  
Zno Thin Films ◽  
Zno Films ◽  
Al Doping ◽  
Co Doping ◽  
N Doping ◽  
Doped Zno

N doped ZnO thin films were prepared by magnetron sputtering. The effect of bias voltage, N2flow and introducing of Al on the behavior of N doping into ZnO films were investigated. The results show that there is little help for N doping into the ZnO films by just adjusting N flow rate because the magnetron sputtering method has a relative weak ability on dissociating the N2. The data of co-doping of Al and N into ZnO films revealed that co-doping is an effective way to advance the N doping into ZnO films. The coordination of Al doping and bias voltage could help the N doping effectively.

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