scholarly journals Drag Voltages in a Superconductor/Insulator/Ferromagnet Trilayer

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7575
Author(s):  
Paola Romano ◽  
Albino Polcari ◽  
Carla Cirillo ◽  
Carmine Attanasio
Keyword(s):  
Magnetic Field ◽  
Wide Class ◽  
Interaction Effects ◽  
Normal Metal ◽  
Perpendicular Magnetic Field ◽  
Cryogenic Temperatures ◽  
Current Voltage ◽  
Multilayered Systems ◽  
Metal Bilayers ◽  
Conventional Superconductor

The interaction between two spatially separated systems is of strong interest in order to study a wide class of unconventional effects at cryogenic temperatures. Here we report on drag transverse voltage effects in multilayered systems containing superconducting and ferromagnetic materials. The sample under test is a conventional superconductor/insulator/ferromagnet (S/I/F) trilayer in a cross configuration. S/F as well as S/N (here N stands for normal metal) bilayers in the same geometry are also analyzed for comparison. Current–voltage (I–V) characteristics measured at T = 4.2 K in the presence of a perpendicular magnetic field show strong peculiarities related to the interaction between the layers. The results are interpreted in terms of interaction effects between the layers.

Magnetic field dependence of the critical current anisotropy in normal metal‐YBa2Cu3O7−δthin‐film bilayers

1991 ◽  
Vol 58 (11) ◽  
pp. 1205-1207 ◽  
Author(s):  
R. H. Ono ◽  
L. F. Goodrich ◽  
J. A. Beall ◽  
M. E. Johansson ◽  
C. D. Reintsema
Keyword(s):  
Magnetic Field ◽  
Critical Current ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Normal Metal

Magnetic Field Sensor Based on a Single Josephson Junction With a Multilayer Ferromagnet/Normal Metal Barrier

2021 ◽  
Vol 31 (5) ◽  
pp. 1-5
Author(s):  
Ivan P. Nevirkovets ◽  
Mikhail A. Belogolovskii ◽  
Oleg A. Mukhanov ◽  
John B. Ketterson
Keyword(s):  
Magnetic Field ◽  
Josephson Junction ◽  
Normal Metal ◽  
Magnetic Field Sensor ◽  
Field Sensor ◽  
Metal Barrier

scholarly journals Manipulating the Raman scattering rotation via magnetic field in an MoS2 monolayer

RSC Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 4035-4041
Author(s):  
Yi Wan ◽  
Xing Cheng ◽  
Yanfang Li ◽  
Yaqian Wang ◽  
Yongping Du ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Raman Scattering ◽  
Perpendicular Magnetic Field ◽  
Mos2 Monolayer

Herein, we demonstrated that a perpendicular magnetic field could produce a dramatic scattering rotation for the vibrations in MoS2 monolayers.

scholarly journals Effects of Perpendicular Magnetic Field Annealing on the Structural and Magnetic Properties of [Co/Ni]2/PtMn Thin Films

2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Perpendicular Magnetic Field ◽  
Face Centered Cubic ◽  
Lattice Image ◽  
X Ray ◽  
Field Annealing ◽  
Face Centered

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.

Dynamic resistance measurement in a YBCO wire under perpendicular magnetic field at various operating temperatures

2019 ◽  
Vol 126 (24) ◽  
pp. 243904 ◽  
Author(s):  
Yanchao Liu ◽  
Zhenan Jiang ◽  
G. Sidorov ◽  
C. W. Bumby ◽  
R. A. Badcock ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Resistance Measurement ◽  
Dynamic Resistance ◽  
Perpendicular Magnetic Field ◽  
Operating Temperatures

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Fields ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Perpendicular Magnetic Field ◽  
Current Saturation ◽  
Tunnel Barriers ◽  
Graphene Island ◽  
Charging Energy

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

scholarly journals Helical edge states in silicene and germanene nanorings in perpendicular magnetic field

2017 ◽  
Vol 30 (3) ◽  
pp. 035301 ◽  
Author(s):  
Dušan Z Jakovljević ◽  
Marko M Grujić ◽  
Milan Ž Tadić ◽  
François M Peeters
Keyword(s):  
Magnetic Field ◽  
Perpendicular Magnetic Field ◽  
Edge States

SPIN-SPLITTING OF THE BOUND POLARON'S GROUND STATE BINDING ENERGY INDUCED BY THE RASHBA SPIN–ORBIT INTERACTION UNDER THE PERPENDICULAR MAGNETIC FIELD

2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Binding Energy ◽  
Ground State ◽  
Spin Splitting ◽  
Perpendicular Magnetic Field ◽  
Spin Orbit ◽  
Ground State Binding Energy ◽  
Bound Polaron ◽  
Rashba Spin

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.

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