scholarly journals Arc Plasma Flow Variation by Obstruction Structures between Anode and Cathode

Metals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1416
Author(s):  
Young-Tae Cho ◽  
Gwang-Ho Jeong ◽  
Chan-Kyu Kim ◽  
Won-Pyo Kim ◽  
Young-Cheol Jeong
Keyword(s):  
Plasma Flow ◽  
Vapor Deposition ◽  
Arc Welding ◽  
Filler Metal ◽  
Flow Analysis ◽  
Chemical Vapor ◽  
Comsol Multiphysics ◽  
Arc Plasma ◽  
Concave Shape ◽  
Arc Pressure

Arc plasma flow between electrodes has been investigated in several studies. However, in the industrial field, arc plasma flow between electrodes is hindered by interfering materials such as filler metal in arc welding, substrates in chemical vapor deposition, and powders in sintering. Therefore, in this study, high temperature arc plasma flow analysis via three obstruction structure shapes was performed to understand the inter-electrode interference phenomena. COMSOL Multiphysics was used for the analysis; COMSOL interface such as electric field, magnetic field, heat transfer, and fluid flow (laminar flow) was applied and Multiphysics such as plasma heat source and temperature coupling were considered. The temperature and velocity of the arc plasma were determined and the energy transfer between the electrodes was analyzed. We confirmed that the concave shape has a lower average heat flux than the other shapes, with the arc pressure evenly distributed in the anode. It is concluded that the concave shape can reduce the flow of the plasma from the anode and obtain even distribution of the arc plasma in the radial direction.

Modeling of Three-Dimensional Gas Metal Arc Welding With Groove

2007 ◽  
Author(s):  
J. Hu ◽  
H. L. Tsai
Keyword(s):  
Weld Pool ◽  
Arc Welding ◽  
Filler Metal ◽  
Gas Metal Arc Welding ◽  
Three Dimensional ◽  
Plasma Arc ◽  
Droplet Impingement ◽  
Sulfur Species ◽  
Metal Arc Welding ◽  
Arc Pressure

This article analyzes the dynamic process of groove filling and the resulting weld pool fluid flow in gas metal arc welding of thick metals with V-groove. Filler droplets carrying mass, momentum, thermal energy, and sulfur species are periodically impinged onto the workpiece. The complex transport phenomena in the weld pool, caused by the combined effect of droplet impingement, gravity, electromagnetic force, surface tension, and plasma arc pressure, were investigated to determine the transient weld pool shape and distributions of velocity, temperature, and sulfur species in the weld pool. It was found that the groove provides a channel which can smooth the flow in the weld pool, leading to poor mixing between the filler metal and the base metal, as compared to the case without a groove.

Diamond growth by hollow cathode arc plasma chemical vapor deposition

1998 ◽  
Vol 13 (11) ◽  
pp. 3114-3121 ◽  
Author(s):  
Gou-Tsau Liang ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Hollow Cathode ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Arc Plasma ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Cathode Arc

Hollow cathode arc plasma chemical vapor deposition was employed to grow crystalline diamond films using 1.5% to 7% of methane in hydrogen. The growth rate was as high as 3.2 μ/h when using 5% CH4/H2 at a pressure of 15 Torr and a substrate temperature of 1083 K. However, an intermediate layer of several hundred nanometers was observed at the film-substrate interface by cross-section SEM. Raman and XPS characterizations showed that the interfacial layer consisted of sp2 carbon and TaC with Ta vaporized from the hot cathode tube. XRD and XPS results further showed that the deposited diamond films also contained TaC. Ta composition in the film increased with the increase of growth pressure, the reduction of substrate temperature, and the increase of H2 flow in the Ta tube. The diamond films deposited by using CHCl3 as carbon source had Ta concentrations one order of magnitude higher than those using CH4, as shown by XPS results, but the nucleation densities using CHCl3 were always higher than those using CH4.

STUDY ON THE PREPARATION OF DLC FILMS DEPOSITED ON SILVER NANOPARTICLES AND THE SENSITIVITY OF LSPR INTERFACE

2013 ◽  
Vol 20 (03n04) ◽  
pp. 1350024
Author(s):  
DAN ZENG ◽  
NANYU MA ◽  
YUJIE HUANG ◽  
ZHENYI FEI ◽  
MUSEN LI ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Like Carbon ◽  
Arc Plasma ◽  
Vacuum Degree ◽  
Performance Results ◽  
Short Time ◽  
Sensing Performance

Diamond-like carbon (DLC) films were deposited on the surface of silver nanoparticles (NPs) using two different sets of technology parameters by radio-frequency magnetron arc plasma enhanced chemical vapor deposition (PECVD) in this paper. The probe profilometer, SEM, AFM, Raman spectroscopy, XPS and UV–vis spectrophotometer were used to characterize the film thickness, microstructure, composition and sensing performance. Results showed that the basic vacuum degree had a greater influence on the properties of DLC films than that of RF forward power. The LSPR interface prepared in short time had sensing performance, but the sensitivity decreased with the thickness of DLC films increase. DLC films of higher sp3 bonds content can slow down the decline rate of the sensitivity caused by increasing of the film thickness.

Homoepitaxial Diamond Synthesis by DC Arc Plasma Jet Chemical Vapor Deposition

1996 ◽  
Vol 35 (Part 2, No. 5A) ◽  
pp. L577-L580 ◽  
Author(s):  
Akira Higa ◽  
Akimitsu Hatta ◽  
Toshimichi Ito ◽  
Takehiro Maehama ◽  
Minoru Toguchi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Diamond Synthesis ◽  
Arc Plasma ◽  
Dc Arc

Fast growth of amorphous Si nanowires by direct current arc plasma jet chemical vapor deposition

2017 ◽  
Vol 10 (03) ◽  
pp. 1750021 ◽  
Author(s):  
Yongheng Wu ◽  
Mingji Li ◽  
Cuiping Li ◽  
Xiaoguo Wu ◽  
Baohe Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Growth Time ◽  
Arc Plasma ◽  
Si Nanowires ◽  
Si Substrate ◽  
Temperature And Growth

Silicon (Si) nanowires were synthesized by direct current arc plasma jet chemical vapor deposition. It was found that growth temperature and growth time played important roles in the morphologies of the Si nanowires. The possible formation mechanism of Si nanowire was also proposed according to the corresponding results. In addition, the Ni particles are dispersed on the Si substrate with the help of alkaline etching, which enables the lateral growth of Si nanowires on a Si substrate. This offers a simple and practical way of synthesizing and positioning the Si nanowires on a substrate.

Size Dependence of Morphology of Diamond Surfaces Prepared by DC Arc Plasma Jet Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 1, No. 2A) ◽  
pp. 355-360 ◽  
Author(s):  
Keiji Hirabayashi ◽  
Noriko Iwasaki Kurihara ◽  
Naoto Ohtake ◽  
Masanori Yoshikawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Size Dependence ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Diamond Surfaces ◽  
Dc Arc
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