Fast growth of amorphous Si nanowires by direct current arc plasma jet chemical vapor deposition

2017 ◽  
Vol 10 (03) ◽  
pp. 1750021 ◽  
Author(s):  
Yongheng Wu ◽  
Mingji Li ◽  
Cuiping Li ◽  
Xiaoguo Wu ◽  
Baohe Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Growth Time ◽  
Arc Plasma ◽  
Si Nanowires ◽  
Si Substrate ◽  
Temperature And Growth

Silicon (Si) nanowires were synthesized by direct current arc plasma jet chemical vapor deposition. It was found that growth temperature and growth time played important roles in the morphologies of the Si nanowires. The possible formation mechanism of Si nanowire was also proposed according to the corresponding results. In addition, the Ni particles are dispersed on the Si substrate with the help of alkaline etching, which enables the lateral growth of Si nanowires on a Si substrate. This offers a simple and practical way of synthesizing and positioning the Si nanowires on a substrate.

Homoepitaxial Diamond Synthesis by DC Arc Plasma Jet Chemical Vapor Deposition

1996 ◽  
Vol 35 (Part 2, No. 5A) ◽  
pp. L577-L580 ◽  
Author(s):  
Akira Higa ◽  
Akimitsu Hatta ◽  
Toshimichi Ito ◽  
Takehiro Maehama ◽  
Minoru Toguchi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Diamond Synthesis ◽  
Arc Plasma ◽  
Dc Arc

Size Dependence of Morphology of Diamond Surfaces Prepared by DC Arc Plasma Jet Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 1, No. 2A) ◽  
pp. 355-360 ◽  
Author(s):  
Keiji Hirabayashi ◽  
Noriko Iwasaki Kurihara ◽  
Naoto Ohtake ◽  
Masanori Yoshikawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Size Dependence ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Diamond Surfaces ◽  
Dc Arc

scholarly journals Nano/Micro-Structured ZnO Rods Synthesized by Thermal Chemical Vapor Deposition with Perpendicular Configuration

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2518
Author(s):  
Seok Cheol Choi ◽  
Do Kyung Lee ◽  
Sang Ho Sohn
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hexagonal Wurtzite Structure ◽  
Growth Time ◽  
Thermal Chemical Vapor Deposition ◽  
Diffraction Patterns ◽  
Temperature And Growth ◽  
Zno Rods

Under a one-step process, catalyst-free growth of one-dimensional (1D) ZnO hierarchical nanostructures was performed on ZnO-seeded Si substrate by thermal chemical vapor deposition with a perpendicular setup. The morphological and crystallographic properties of the nano/micro-structured ZnO rods were investigated with varying growth temperature and growth time. X-ray diffraction patterns of 1D ZnO double-structured rods showed the hexagonal wurtzite structure. The morphology and crystal structure of the ZnO double-structured rods were sensitive to the growth temperature and growth time. From Raman scattering and photoluminescence spectra, the orientation and size effects of the ZnO double-structured rods were discussed in relation to growth temperatures and growth times.

scholarly journals Research on the Preparation and Spectral Characteristics of Graphene/TMDs Hetero-structures

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Kun Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spectral Characteristics ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Si Substrate ◽  
Broadband Absorption ◽  
Gate Effect ◽  
Pressure Chemical

AbstractThe Van der Waals (vdWs) hetero-structures consist of two-dimensional materials have received extensive attention, which is due to its attractive electrical and optoelectronic properties. In this paper, the high-quality large-size graphene film was first prepared by the chemical vapor deposition (CVD) method; then, graphene film was transferred to SiO2/Si substrate; next, the graphene/WS2 and graphene/MoS2 hetero-structures were prepared by the atmospheric pressure chemical vapor deposition method, which can be achieved by directly growing WS2 and MoS2 material on graphene/SiO2/Si substrate. Finally, the test characterization of graphene/TMDs hetero-structures was performed by AFM, SEM, EDX, Raman and PL spectroscopy to obtain and grasp the morphology and luminescence laws. The test results show that graphene/TMDs vdWs hetero-structures have the very excellent film quality and spectral characteristics. There is the built-in electric field at the interface of graphene/TMDs heterojunction, which can lead to the effective separation of photo-generated electron–hole pairs. Monolayer WS2 and MoS2 material have the strong broadband absorption capabilities, the photo-generated electrons from WS2 can transfer to the underlying p-type graphene when graphene/WS2 hetero-structures material is exposed to the light, and the remaining holes can induced the light gate effect, which is contrast to the ordinary semiconductor photoconductors. The research on spectral characteristics of graphene/TMDs hetero-structures can pave the way for the application of novel optoelectronic devices.

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