Synthesis of carbon nitride films by magnetically rotated arc-plasma jet chemical vapor deposition

1995 ◽  
Vol 95 (5) ◽  
pp. 281-286 ◽  
Author(s):  
Tyan-Ywan Yen ◽  
Chang-Pin Chou
1996 ◽  
Vol 35 (Part 2, No. 5A) ◽  
pp. L577-L580 ◽  
Author(s):  
Akira Higa ◽  
Akimitsu Hatta ◽  
Toshimichi Ito ◽  
Takehiro Maehama ◽  
Minoru Toguchi ◽  
...  

2017 ◽  
Vol 10 (03) ◽  
pp. 1750021 ◽  
Author(s):  
Yongheng Wu ◽  
Mingji Li ◽  
Cuiping Li ◽  
Xiaoguo Wu ◽  
Baohe Yang ◽  
...  

Silicon (Si) nanowires were synthesized by direct current arc plasma jet chemical vapor deposition. It was found that growth temperature and growth time played important roles in the morphologies of the Si nanowires. The possible formation mechanism of Si nanowire was also proposed according to the corresponding results. In addition, the Ni particles are dispersed on the Si substrate with the help of alkaline etching, which enables the lateral growth of Si nanowires on a Si substrate. This offers a simple and practical way of synthesizing and positioning the Si nanowires on a substrate.


1992 ◽  
Vol 31 (Part 1, No. 2A) ◽  
pp. 355-360 ◽  
Author(s):  
Keiji Hirabayashi ◽  
Noriko Iwasaki Kurihara ◽  
Naoto Ohtake ◽  
Masanori Yoshikawa

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